首页 > 器件类别 > 分立半导体 > 二极管

DF08M

1.5A, 800V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4

器件类别:分立半导体    二极管   

厂商名称:Rochester Electronics

厂商官网:https://www.rocelec.com/

器件标准:

下载文档
DF08M 在线购买

供应商:

器件:DF08M

价格:-

最低购买:-

库存:点击查看

点击购买

器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DIP
包装说明
DIP-4
针数
4
Reach Compliance Code
unknown
其他特性
LOW LEAKAGE, UL RECOGNIZED
最小击穿电压
800 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PDIP-T4
JESD-609代码
e3
湿度敏感等级
NOT APPLICABLE
最大非重复峰值正向电流
50 A
元件数量
4
相数
1
端子数量
4
最大输出电流
1.5 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度(摄氏度)
NOT APPLICABLE
最大功率耗散
3.1 W
认证状态
COMMERCIAL
最大重复峰值反向电压
800 V
表面贴装
NO
端子面层
MATTE TIN
端子形式
THROUGH-HOLE
端子位置
DUAL
处于峰值回流温度下的最长时间
NOT APPLICABLE
Base Number Matches
1
文档预览
D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
DF005M - DF10M
DF005M - DF10M
Features
Surge overload rating: 50 amperes
peak.
Glass passivated junction.
Low leakage.
UL certified, UL #E111753.
DIP
Bridge Rectifiers
Absolute Maximum Ratings*
Symbol
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
T
stg
T
J
T
A
= 25°C unless otherwise noted
Parameter
005M
Maximum Repetitive Reverse Voltage
Maximum RMS Bridge Input Voltage
DC Reverse Voltage
(Rated V
R
)
Average Rectified Forward Current,
@ T
A
= 40°C
Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Storage Temperature Range
Operating Junction Temperature
50
35
50
01M
100
70
100
02M
200
140
200
Value
04M
400
280
400
1.5
50
-55 to +150
-55 to +150
06M
600
420
600
08M
800
560
800
10M
1000
700
1000
Units
V
V
V
A
A
°C
°C
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
Symbol
P
D
R
θJA
Parameter
Power Dissipation
Thermal Resistance, Junction to Ambient,*
per leg
Value
3.1
40
Units
W
°C/W
*
Device mounted on PCB with 0.5 x 0.5" (13 x 13 mm).
Electrical Characteristics
Symbol
V
F
I
R
T
A
= 25°C unless otherwise noted
Parameter
Forward Voltage, per bridge @ 1.0 A
Reverse Current, total bridge @ rated V
R
T
A
= 25°C
T
A
= 125°C
2
I t rating for fusing
t < 8.35 ms
Total Capacitance, per leg
V
R
= 4.0 V, f = 1.0 MHz
Device
1.1
5.0
500
10
25
Units
V
µA
µA
A
2
s
pF
C
T
2001
Fairchild Semiconductor Corporation
DF005M-DF10M, Rev. C
DF005M - DF10M
Bridge Rectifiers
(continued)
Typical Characteristics
Peak Forward Surge Current, I
FSM
[A]
50
Average Rectified Forward Current, I
F
[A]
1.5
40
1
30
20
0.5
10
0
1
2
5
10
20
Number of Cycles at 60Hz
50
100
0
20
40
60
80
100
120
Ambient Temperature [ºC]
140
160
Figure 1. Non-Repetitive Surge Current
Figure 2. Forward Current Derating Curve
10
10
T
A
= 100
º
C
Forward Current, I
F
[A]
1
Reverse Current, I
R
[mA]
1
0.1
T
A
= 25
º
C
Pulse Width = 200µs
µ
0.1
T
A
= 25
º
C
0.01
0.4
0.6
0.8
1
1.2
Forward Voltage, V
F
[V]
1.4
0.01
0
20
40
60
80
100
120
140
Percent of Rated Peak Reverse Voltage [%]
Figure 3. Forward Voltage Characteristics
Figure 4. Reverse Current vs Reverse Voltage
2001
Fairchild Semiconductor Corporation
DF005M-DF10M, Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
查看更多>
参数对比
与DF08M相近的元器件有:DF01M、DF04M、DF06M、DF10M、DF005M、DF02M。描述及对比如下:
型号 DF08M DF01M DF04M DF06M DF10M DF005M DF02M
描述 1.5A, 800V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4 1.5A, 100V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4 1.5A, 400V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4 1.5A, 600V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4 1.5A, 1000V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4 1.5A, 50V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4 1.5A, 200V, SILICON, BRIDGE RECTIFIER DIODE, DIP-4
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
零件包装代码 DIP DIP DIP DIP DIP DIP DIP
包装说明 DIP-4 DIP-4 DIP-4 DIP-4 DIP-4 DIP-4 DIP-4
针数 4 4 4 4 4 4 4
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown
其他特性 LOW LEAKAGE, UL RECOGNIZED LOW LEAKAGE, UL RECOGNIZED LOW LEAKAGE, UL RECOGNIZED LOW LEAKAGE, UL RECOGNIZED LOW LEAKAGE, UL RECOGNIZED LOW LEAKAGE, UL RECOGNIZED LOW LEAKAGE, UL RECOGNIZED
最小击穿电压 800 V 100 V 400 V 600 V 1000 V 50 V 200 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4 R-PDIP-T4
JESD-609代码 e3 e3 e3 e3 e3 e3 e3
湿度敏感等级 NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
最大非重复峰值正向电流 50 A 50 A 50 A 50 A 50 A 50 A 50 A
元件数量 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4
最大输出电流 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A 1.5 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
峰值回流温度(摄氏度) NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
最大功率耗散 3.1 W 3.1 W 3.1 W 3.1 W 3.1 W 3.1 W 3.1 W
认证状态 COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
最大重复峰值反向电压 800 V 100 V 400 V 600 V 1000 V 50 V 200 V
表面贴装 NO NO NO NO NO NO NO
端子面层 MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN MATTE TIN
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 DUAL DUAL DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE NOT APPLICABLE
Base Number Matches 1 1 1 1 1 - -
厂商名称 - Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics Rochester Electronics
Is Samacsys - N N N N - -
热门器件
热门资源推荐
器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
需要登录后才可以下载。
登录取消