THREE PHASE DIODE＋THYRISTOR
DFA150AA80/160
UL;E76102 M）
（
SanRex
Power Module,
DFA150AA,
is complex isolated
module which is designed for rash current circuit.
It contains six diodes connected in a three phase bridge
configuration, and a thyristor connected to a direct current line.
●
This
１８
０
９± ．
３ ０３
１． ２
３５ ０
２
２
２ １．
２ ５５
M
４
８
depth １ mm
０
１
２
R
２
R
２
＋
＋
−
−
４ ５８
-φ .
diode module and thyristor put together.
●
This
Module is also isolated type between electorode
R2
G
＋
terminal and mounting base. So you can put this
Module and other one together in a same fin.
（Application）
●
Inverter for AC or DC motor control, Current stabilized
power supply, Switching power supply.
∼
∼
∼
６ ６
-M
depth １ mm
０
R
R
S
S
T
T
２
８
４
２
２
２
２
２
１
２．
８５
７
２± ．
７ ０３
−
Unit：㎜
●DIODE
■Maximum
Ratings
Symbol
V
RRM
V
RSM
Symbol
I
D
I
FSM
Tj
Tstg
V
ISO
Item
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Item
Output Current (D.C.)
Surge forward current
Operating Junction Temperature
Storage Temperature
Isolation Breakdown Voltage (R.M.S.)
Mounting
Torque
Mass
Mounting
（M5）
Terminal（M6）
Terminal（M4）
A.C. 1minute
Recommended Value 1.5-2.5（15-25）
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.0-1.4（10-14）
Typical Value
Ratings
DFA150AA80
800
960
Conditions
Three phase full wave, Tc＝93℃
（Tj＝25℃ unless otherwise specified）
DFA150AA160
1600
1700
Ratings
150
1460/1600
−40
to
＋150
−40
to
＋125
2500
2.7（28）
4.7（48）
1.5（15）
460
N½m
（kgf½B）
g
Unit
V
V
Unit
A
A
℃
℃
V
１cycle,
50/60H
Z
, peak value, non-repetitive
■Electrical
Characteristics
Symbol
I
RRM
V
FM
Item
Repetitive Peak Reverse Current,max.
Forward Voltage Drop,max.
Conditions
T
j
＝150℃，V
R
=V
RRM
I
F
＝150A，Inst.
measurement
Junction to Case（TOTAL）
Case to fin
Ratings
15
1.35
0.14
0.07
Unit
mA
V
℃/W
℃/W
Rth j-c） Thermal Impedance, max.
（
Rth c-f） Thermal Impedance, max.
（
１
８ ２
３
４ ．± ．
８０ ０３
６
２
２．
４５
Module is designed very compactly. Because
G
DFA150AA80/160
●THYRISTOR
■Maximum
Ratings
Symbol
V
RRM
V
RSM
V
DRM
Symbol
（
I
T AV）
（Tj＝25℃ unless otherwise specified）
Item
Ratings
DFA150AA80
800
960
800
Conditions
Singl phase half wave. 180°
conduction, Tc＝93℃
１cycle,
50/60H
Z
, peak value, non-repetitive
I
G
＝100mA，
D
＝
1 2
V
DRM
，
G
/dt＝0.1A/
V
／
di
μs
A.C. 1minute
DFA150AA160
1600
1700
1600
Ratings
150
1460/1600
10670
150
2500
−40
to
＋135
−40
to
＋125
Recommended Value 1.5-2.5（15-25）
Recommended Value 2.5-3.9（25-40）
Recommended Value 1.0-1.4（10-14）
Typical Value
2.7（28）
4.7（48）
1.5（15）
460
N½m
（㎏f½B）
g
Unit
V
V
V
Unit
A
A
A
2
S
A/
μs
V
℃
℃
Repetitive Peak Reverse Voltage
Non-Repetitive Peak Reverse Voltage
Repetitive Peak off-State Voltage
Item
Average On-State Current
Surge On-State Current
I
2
t（for fusing）
Critical Rate of Rise of On-State Current
Isolation Breakdown Voltage (R.M.S.)
Operating Junction Temperature
Storage Temperature
Mounting
Torque
Mass
Mounting
（M5）
Terminal M6）
（
Terminal M4）
（
I
TSM
I
2
t
di／dt
V
ISO
Tj
Tstg
■Electrical
Characteristics
Symbol
I
DRM
I
RRM
V
TM
I
GT
V
GT
dv／dt
Item
Repetitive Peak Off-State Current,max.
Repetitive Peak Reverse Current,max.
Peak On-State Voltage,max.
Gate Trigger Current,max.
Gate Trigger Voltage,max.
Critical Rate of Rise of Off-
State Voltage,min.
Conditions
Tj＝135℃，V
D
＝V
DRM
Tj＝135℃，V
D
＝V
RRM
Tj＝25℃，I
TM
＝150A，
，Inst.
measurement
Tj＝25℃，V
D
＝6V，I
T
＝1A
Tj＝25℃，V
D
＝6V，I
T
＝1A
Tj＝125℃，V
D
＝
2 3
V
DRM
／
Junction to Case
Case to fin
Ratings
100
100
1.35
70
3
500
0.21
0.07
Unit
mA
mA
V
mA
V
V/
μs
℃/W
℃/W
Rth j-c） Thermal Impedance, max.
（
Rth c-f） Thermal Impedance, max.
（
１０
００
DIODE Maximum Forward Characteristics
Power Dissipation Pav W）
（
Max.
４０
５
４０
０
３０
５
３０
０
２０
５
２０
０
１０
５
DIODE Output Current vs. Power Dissipation
Forward Current I（A）
F
５０
０
２０
０
１０
０
５
０
Three Phase
Ｔ= ５
½２ ℃
１０
０
５
０
０
０
２
０
４
０
６
０
８
０
１０
０
１０
２
１０
４
１０
６
２
０
１
０
０５
．
１０
．
１５
．
２０
．
２５
．
Forward Voltage Drop V（V）
F
Output Current I
D
A）
（
DFA150AA80/160
Allowable Case Temperature Tc
（℃）
Three Phase
Surge Forward Current I
FSM
（A）
１０
５
１０
４
１０
３
１０
２
１０
１
１０
０
９
０
DIODE Output Current vs.
Allowable case Temperature
Surge Forward Current Rating
（Non-Repetitive）
１０
８０
１０
６０
１０
４０
１０
２０
１０
００
８０
０
６０
０
４０
０
２０
０
０
１
２
５
１
０
２
０
５
０
１０
０
５ Hz
０
Ｓ½½ ½ ½ ½½½ ½ ½
½½½ ½ ½ ½ ½ ½
½
Ｔ = ５ start
½２ ℃
６ Hz
０
Per one element
８
０
０
２
０
４
０
６
０
８
０
１０
０
１０
２
１０
４
１０
６
Output Current I
D
A）
（
Transient Thermal Impedance
θ
（℃/W）
j-c
Time
（Cycles）
１
０
０
５
２
１
−１
０
５
２
１
−２
０
５
２
１
−３
０
５
２
１
−４
０
５
２
１
−５ ー６
０
１ ２
０
１
−２
２
０
DIODE Transient Thermal Impedance
１０
０
５
０
Gate Characteristics
Gate Voltage
（V）
Junction to Case
２
０
１
０
５
２
１
０５
．
０２
．
０１
．
１
０
２
０
Peak Forward Gate Voltage
（10V）
Av
era
Pe
ak
ow
ge
Ga
te
e（
r１
０W
）
Po
we
（３
r
W）
−１ ℃
０
１５
３℃
２℃
５
Maximum Gate Non-Trigger Voltage
Maximum
５ １
ー５
２
０
５ １
−１
２
０
Time
t
sec）
（
５ １
ー４
２
０
０
５ １
０
２
５ １
ー３
２
０
０
５ １
１
５ １
ー２
０
５ １０ ２０
０ ０
０
５０ １０ ２０
０ ００ ００
５０ １００
００ ００
Gate Current
（mA）
１０
００
SCR Maximum Forward Characteristics
Max.
２０
５
SCR Output Current vs. Power Dissipation
On-State Peak Current I（A）
T
５０
０
２０
０
１０
０
５
０
Ｔ= ５
½２ ℃
Power Dissipation Pav W）
（
２０
０
１０
５
１０
０
５
０
２
０
１
０
０５
．
１０
．
１５
．
２０
．
２５
．
０
０
２
０
４
０
６
０
８
０
１０ １０ １０ １０ １０
０
２
４
６
８
On-State Voltage Drop V
TM
（V）
Maximam Allowable Case Temperature
（℃）
Transient Thermal Impedance
θ
（℃/W）
j-c
Output Current
（A）
１０
６
１０
４
１０
２
１０
０
８
０
６
０
４
０
２
０
SCR Output Current vs.
Maximum Allowable case Temperature
０
０
２
０
４
０
６
０
８
０
１０ １０ １０ １０ １０
０
２
４
６
８
Output Current
（A）
１
０
０
５
２
１
−１
０
５
２
１
−２
０
５
２
１
−３
０
５
２
１
−４
０
５
２
１
−５ ー６
０
１ ２
０
１
−２
２
０
SCR Transient Thermal Impedance
Junction to Case
Maximum
５ １
ー５
２
０
５ １
−１
２
０
Time
t
sec）
（
５ １
ー４
２
０
０
５ １
０
２
５ １
ー３
２
０
０
５ １
１
Peak Gate Current ３A）
（
Ga
te P
５ １
ー２
０
