The DG308B, DG309B analog switches are highly improved
versions of the industry-standard DG308A, DG309. These
devices are fabricated in Vishay Siliconix’ proprietary silicon
gate CMOS process, resulting in lower on-resistance, lower
leakage, higher speed, and lower power consumption.
These quad single-pole single-throw switches are designed
for a wide variety of applications in telecommunications,
instrumentation, process control, computer peripherals, etc.
An improved charge injection compensation design
minimizes switching transients. The DG308B and DG309B
can handle up to ± 22 V input signals. An epitaxial layer
prevents latchup.
All devices feature true bi-directional performance in the on
condition, and will block signals to the supply levels in the off
condition.
The DG308B is a normally open switch and the DG309B is
a normally closed switch. (see Truth Table.)
FEATURES
•
•
•
•
•
•
•
•
± 22 V supply voltage rating
CMOS compatible logic
Low on-resistance - R
DS(on)
: 45
Low leakage - I
D(on)
: 20 pA
Single supply operation possible
Extended temperature range
Fast switching - t
ON
: < 200 ns
Low glitching - Q: 1 pC
BENEFITS
•
•
•
•
•
•
•
Wide analog signal range
Simple logic interface
Higher accuracy
Minimum transients
Reduced power consumption
Superior to DG308A, DG309
Space savings (TSSOP)
APPLICATIONS
•
•
•
•
•
•
•
Industrial instrumentation
Test equipment
Communications systems
Disk drives
Computer peripherals
Portable instruments
Sample-and-hold circuits
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG308B
Dual-In-Line, SOIC and TSSOP
IN
1
D
1
S
1
V-
GND
S
4
D
4
IN
4
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
IN
2
D
2
S
2
V+
NC
S
3
D
3
IN
3
TRUTH TABLE
Logic
0
1
Logic “0”
3.5
V
Logic “1”
11
V
DG308B
OFF
ON
DG309B
ON
OFF
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
1
DG308B, DG309B
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG308BDJ
DG308BDJ-E3
DG309BDJ
DG309BDJ-E3
DG308BDY
DG308BDY-E3
DG308BDY-T1
DG308BDY-T1-E3
16-Pin Narrow SOIC
- 40 °C to 85 °C
DG309BDY
DG309BDY-E3
DG309BDY-T1
DG309BDY-T1-E3
DG308BDQ
DG308BDQ-E3
DG308BDQ-T1
DG308BDQ-T1-E3
16-Pin TSSOP
DG309BDQ
DG309BDQ-E3
DG309BDQ-T1
DG309BDQ-T1-E3
16-Pin PlasticDIP
ABSOLUTE MAXIMUM RATINGS
Parameter
Voltages Referenced, V+ to V-
GND
Digital Inputs
a
,
Limit
44
25
V
S
, V
D
(V-) - 2 to (V+) + 2
or
30 mA, whichever occurs first
30
100
- 65 to 150
- 65 to 125
470
d
Unit
V
Current, Any Terminal
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle max.)
Storage Temperature
(AK Suffix)
(DJ, DY and DQ Suffix)
16-Pin Plastic DIP
c
Power Dissipation
(Package)
b
16-Pin Narrow SOIC and TSSOP
16-Pin CerDIP
e
mA
°C
640
900
mW
Notes:
a. Signals on S
X
, D
X
, or IN
X
exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6.5 mW/°C above 75 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
www.vishay.com
2
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
DG308B, DG309B
Vishay Siliconix
SPECIFICATIONS
a
Test Conditions
Unless Specified
V+ = 15 V, V- = - 15 V
V
IN
= 11 V, 3.5 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
Room
Full
Room
Room
Full
Room
Full
Room
Full
Full
Full
V
INH
or V
INL
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
1
5
5
16
90
95
dB
pF
5
200
150
200
150
-1
Typ.
c
Min.
d
- 15
45
2
±
0.01
Max.
d
15
85
100
0.5
20
0.5
20
0.5
40
Min.
d
- 15
Max.
d
15
85
100
0.5
5
0.5
5
0.5
10
Unit
V
%
- 0.5
- 20
- 0.5
- 20
- 0.5
- 40
11
3.5
1
-1
- 0.5
-5
- 0.5
-5
- 0.5
- 10
11
3.5
1
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
R
DS(on)
Match
Source Off Leakage Current
Drain Off Leakage Current
Drain On Leakage Current
Digital Control
Input, Voltage High
Input, Voltage Low
Input Current
Input Capacitance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Source-Off Capacitance
Drain-Off Capacitance
Channel-On Capacitance
Off-Isolation
Channel-to-Channel
Crosstalk
Power Supply
Positive Supply Current
Negative Supply Current
Power Supply Range for
Continuous Operation
Symbol
V
ANALOG
R
DS(on)
R
DS(on)
I
S(off)
I
D(off)
I
D(on)
V
INH
V
INL
I
INH
or I
INL
C
IN
t
ON
t
OFF
Q
C
S(off)
C
D(off)
C
D(on)
OIRR
X
TALK
V
D
=
±
10 V, I
S
= 1 mA
V
S
=
±
14 V, V
D
=
±
14 V
V
D
=
±
14 V, V
S
=
±
14 V
V
S
= V
D
=
±
14 V
±
0.01
±
0.02
nA
V
µA
pF
V
S
= 3 V, see figure 2
C
L
= 1000 pF, V
g
= 0 V, R
g
= 0
V
S
= 0 V, f = 1 MHz,
V
D
= V
S
= 0 V, f = 1 MHz
C
L
= 15 pF, R
L
= 50
V
S
= 1 V
RMS
, f = 100 kHz
ns
pC
I+
V
IN
= 0 V or 15 V
I-
V
OP
Room
Full
Room
Full
Full
1
5
-1
-5
-1
-5
1
5
µA
±
4
±
22
±
4
±
22
V
Document Number: 70047
S11-0303-Rev. G, 28-Feb-11
www.vishay.com
3
DG308B, DG309B
Vishay Siliconix
SPECIFICATIONS
a
(for Single Supply)
Test Conditions
Unless Specified
V+ = 12 V, V- = 0 V
V
IN
= 11 V, 3.5 V
f
A Suffix
D Suffix
- 55 °C to 125 °C - 40 °C to 85 °C
Temp.
b
Full
Room
Full
Room
Room
Room
Room
Full
Room
Full
Full
4
1
5
-1
-5
4
44
-1
-5
4
44
1
5
Typ.
c
Min.
d
0
90
Max.
d
12
160
200
300
200
Min.
d
0
Max.
d
12
160
200
300
200
Unit
V
Parameter
Analog Switch
Analog Signal Range
e
Drain-Source
On-Resistance
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
Power Supply
Positive Supply Current
Negative Supply Current
Power Supply Range for
Continuous Operation
Symbol
V
ANALOG
R
DS(on)
t
ON
t
OFF
Q
V
D
=
3
V, 8 V, I
S
= 1 mA
V
S
= 8 V, see figure 2
C
L
= 1 nF, V
gen
= 6 V, R
gen
= 0
ns
pC
I+
V
IN
= 0 V or 12 V
I-
V
OP
µA
V
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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