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DG3409DB-T1-E3

IC DUAL 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PBGA16, 4 X 4 MM, 0.50 MM PITCH, LEAD FREE, BUMP CHIP-16, Multiplexer or Switch

器件类别:模拟混合信号IC    信号电路   

厂商名称:Vishay(威世)

厂商官网:http://www.vishay.com

器件标准:  

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
Vishay(威世)
零件包装代码
BCC
包装说明
VFBGA, BGA16,4X4,20
针数
16
Reach Compliance Code
unknown
模拟集成电路 - 其他类型
DIFFERENTIAL MULTIPLEXER
JESD-30 代码
S-PBGA-B16
JESD-609代码
e1
长度
4 mm
湿度敏感等级
1
负电源电压最大值(Vsup)
-6 V
负电源电压最小值(Vsup)
-3 V
标称负供电电压 (Vsup)
-5 V
信道数量
4
功能数量
2
端子数量
16
通态电阻匹配规范
3.6 Ω
最大通态电阻 (Ron)
8 Ω
最高工作温度
85 °C
最低工作温度
-40 °C
封装主体材料
PLASTIC/EPOXY
封装代码
VFBGA
封装等效代码
BGA16,4X4,20
封装形状
SQUARE
封装形式
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度)
260
电源
+-3/+-6/3/12 V
认证状态
Not Qualified
座面最大高度
0.753 mm
最大信号电流
0.1 A
最大供电电流 (Isup)
0.001 mA
最大供电电压 (Vsup)
6 V
最小供电电压 (Vsup)
3 V
标称供电电压 (Vsup)
5 V
表面贴装
YES
最长断开时间
78 ns
最长接通时间
88 ns
切换
BREAK-BEFORE-MAKE
技术
BICMOS
温度等级
INDUSTRIAL
端子面层
TIN SILVER COPPER
端子形式
BALL
端子节距
0.5 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
40
宽度
4 mm
文档预览
DG3408/3409
New Product
Vishay Siliconix
Precision 8-Ch/Dual 4-Ch Low Voltage Analog Multiplexers
FEATURES
D
2.7-to 12-V Single Supply or
"3-
to
"6-V
Dual Supply Operation
D
Low On-Resistance—r
ON
: 3.9
W
Typ.
D
Fast Switching: t
ON
— 42 ns, t
OFF
— 24 ns
D
Break-Before-Make Guaranteed
D
Low Leakage
D
TTL, CMOS, LV Logic (3 V) Compatible
D
2000-V ESD Protection (HBM)
D
MICRO FOOTr Package
D
Lead Free Solder Bumps
BENEFITS
D
D
D
D
High Accuracy
Single and Dual Power Rail Capacity
Wide Operating Voltage Range
Simple Logic Interface
APPLICATIONS
D
D
D
D
D
D
D
Data Acquisition Systems
Battery Operated Equipment
Portable Test Equipment
Sample and Hold Circuits
Communication Systems
SDSL, DSLAM
Audio and Video Signal Routing
DESCRIPTION
The DG3408/3409 uses BiCMOS wafer fabrication
technology that allows the DG3408/3409 to operate on single
and dual supplies. Single supply voltage ranges from 3- to
12-V while dual supply operation is recommended with
"3
to
"6
V.
The DG3408 is an 8-channel single-ended analog multiplexer
designed to connect one of eight inputs to a common output
as determined by a 3-bit binary address (A
0
, A
1
, A
2
). The
DG3409 is a dual 4-channel differential analog multiplexer
designed to connect one of four differential inputs to a common
dual output as determined by its 2-bit binary address (A
0
, A
1
).
Break-before-make switching action to protect against
momentary crosstalk between adjacent channels.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG3408
DG3409
MICRO FOOT 16-Bump
V+
V−
A
1
Locator
MICRO FOOT 16-Bump
V+
V−
A
1
Locator
S
1
S
2
S
3
S
4
S
5
S
6
S
7
S
8
Decoder/Driver
D
A
B
C
D
S
5
S
6
S
7
S
8
XXX
3408
Device Marking: 3408
xxx = Data/Lot Traceabiliity Code
1
2
D
V−
EN
A
1
3
A
2
GND
V+
A
0
4
S
1
S
2
S
3
S
4
S
1A
S
2A
S
3A
S
4A
S
1B
S
2B
S
3B
S
4B
Decoder/Driver
D
B
A
B
C
D
S
1A
S
2A
S
3A
S
4A
D
A
XXX
3409
Device Marking: 3409
xxx = Data/Lot Traceabiliity Code
1
2
D
A
V−
EN
A
1
3
D
B
GND
V+
A
0
4
S
1B
S
2B
S
3B
S
4B
A
2
A
1
A
0
EN
GND
A
1
A
0
EN
GND
Top View
Document Number: 72858
S-40539—Rev. A, 29-Mar-04
Top View
www.vishay.com
1
DG3408/3409
Vishay Siliconix
New Product
TRUTH TABLES AND ORDERING INFORMATION
TRUTH TABLE
A
2
X
0
0
0
0
1
1
1
1
DG3408
EN
1
0
0
0
0
0
0
0
0
TRUTH TABLE
A
1
X
0
0
1
1
DG3409
On Switch
None
1
2
3
4
A
1
X
0
0
1
1
0
0
1
1
A
0
X
0
1
0
1
0
1
0
1
On Switch
None
1
2
3
4
5
6
7
8
A
0
X
0
1
0
1
EN
1
0
0
0
0
X = Don’t Care
For low and high voltage levels for V
AX
and V
EN
consult “Digital Control” Parameters for Specific V+ operation. See Specifications
Tables for:
Single Supply 12 V
Dual Supply V+ = 5 V, V− =
−5
V
Single Supply 5 V
Single Supply 3 V
ORDERING INFORMATION
Temperature
Range
−40
to 85_C
DG3408
Part Number
DG3408DB-T1—E3
(Lead Free)
ORDERING INFORMATION
Temperature
Range
−40
to 85_C
DG3409
Part Number
DG3409DB-T1—E3
(Lead Free)
Package
MICRO FOOT: 16-Bump
(4x4, 0.5 mm Pitch,
238
mm
Bump Height)
Package
MICRO FOOT: 16-Bump
(4x4, 0.5 mm Pitch,
238
mm
Bump Height)
ABSOLUTE MAXIMUM RATINGS
Voltage Referenced to V−
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 V
GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V
Digital Inputs
a
, V
S
, V
D
. . . . . . . . . . . . . . . . . . . . . . . (V−)
−0.3
V to (V+) +0.3 V
Current (Any Terminal Except S or D) . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current, S or D) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Peak Current, S or D
(Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA
Package Solder Reflow Conditions
b
IR/Convection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250_C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−65
to 150_C
Power Dissipation (Package)
c,
(T
A
= 70_C)
16-Bump (4x4 mm) MICRO FOOT
d
. . . . . . . . . . . . . . . . . . . . . . . . . . . 719 mW
Notes
a. Signals on S
X
, D
X
or IN
X
exceeding V+ or V− will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. Refer to IPC/JEDEC (J-STD-020B)
c. All bumps soldered or welded to PC board.
d. Derate 9.0 mW/_C above 70_C.
www.vishay.com
2
Document Number: 72858
S-40539—Rev. A, 29-Mar-04
DG3408/3409
New Product
Vishay Siliconix
SPECIFICATIONS (SINGLE SUPPLY 12 V)
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
On-Resistance
r
ON
Match Between Channels
g
On-Resistance Flatness
i
V
ANALOG
r
ON
Dr
ON
r
ON
Flatness
I
S(off)
Switch Off Leakage Current
I
D(off)
Channel On Leakage Current
I
D(on)
V
EN
= 0 V, V
S
= V
D
= 1 V or 11 V
V
EN
= 2 4 V V
D
= 11 V or 1 V V
S
= 1 V or 11 V
2.4 V,
V,
V+ = 10.8 V, V
D
= 2 V or 9 V, I
S
= 50 mA
V+ = 10.8 V, V
D
= 2 V or 9 V, I
S
= 50 mA
Sequence Each Switch On
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
−2
−20
−2
−20
−2
−20
0
4
12
7
7.5
3.6
8
2
20
2
20
2
20
nA
W
V
Limits
−40
to 85_C
Symbol
V+ = 12 V,
"10%,
V− = 0 V
V
A
, V
EN
= 0.8 V or 2.4 V
f
Temp
b
Min
c
Typ
d
Max
c
Unit
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
Input Current
V
INH
V
INL
I
IN
V
AX
= V
EN
= 2.4 V or 0.8 V
Full
Full
Full
−1
2.4
0.8
1
V
mA
Dynamic Characteristics
Transition Time
Break-Before-Make Time
Enable Turn-On Time
Enable Turn-Off Time
Charge Injection
e
Off Isolation
e, h
Crosstalk
e
Source Off Capacitance
e
t
TRANS
t
BBM
t
ON(EN)
t
OFF(EN)
Q
OIRR
X
TALK
C
S( ff)
S(off)
C
D( ff)
D(off)
C
D( )
D(on)
V
S1
= 8 V, V
S8
= 0 V, (DG3408)
V
S1b
= 8 V, V
S4b
= 0 V, (DG3409)
See Figure 2
V
S(all)
= V
DA
= 5 V
See Figure 4
V
AX
= 0 V, V
S1
= 5 V (DG3408)
V
AX
= 0 V V
S1b
= 5 V (DG3409)
V,
See Figure 3
C
L
= 1 nF, V
GEN
= 0 V, R
GEN
= 0
W
f = 100 kHz R
L
= 1 kW
kHz,
f = 1 MHz V
S
= 0 V V
EN
= 2 4 V
MHz,
V,
2.4
f = 1 MHz V
D
= 0 V V
EN
= 2 4 V
MHz,
V,
2.4
f = 1 MHz V
D
= 0 V V
EN
= 0 V
MHz,
V,
DG3408
DG3409
DG3408
DG3409
DG3408
DG3409
Room
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
2
42
24
ns
42
24
29
−80
−85
21
23
211
112
238
137
pF
70
75
44
46
pC
dB
71
75
Drain Off Capacitance
e
Drain On Capacitance
e
Power Supplies
Power Supply Current
I+
V
EN
= V
A
= 0 V or V+
Room
1.0
mA
Document Number: 72858
S-40539—Rev. A, 29-Mar-04
www.vishay.com
3
DG3408/3409
Vishay Siliconix
New Product
SPECIFICATIONS (DUAL SUPPLY V+ = 5 V, V− = −5 V)
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
On-Resistance
r
ON
Match Between Channels
g
On-Resistance Flatness
i
V
ANALOG
r
ON
Dr
ON
r
ON
Flatness
I
S(off)
Switch Off Leakage Current
a
I
D(off)
Channel On Leakage Current
a
I
D(on)
V+ = 4.5 V, V− =
−4.5
V, V
D
=
"3.5
V, I
S
= 50 mA
V+ = 4.5 V, V− =
−4.5
V, V
D
=
"3.5
V, I
S
= 50 mA
Sequence Each Switch On
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
−2
−20
−2
−20
−2
−20
−5
5
5
8
8.5
3.6
8.2
2
20
2
20
2
20
nA
W
V
Limits
−40
to 85_C
Symbol
V+ = 5 V, V− =
−5
V
"10%
V
A
, V
EN
= 0.8 V or 2.0 V
f
Temp
b
Min
c
Typ
d
Max
c
Unit
V+ = 5.5 V, V− =
−5.5
V
V
EN
= 2.4 V, V
D
=
"4.5
V, V
S
=
#4.5
V
V+ = 5.5 V, V− =
−5.5
V
V
EN
= 0 V, V
D
=
"4.5
V, V
S
=
#4.5
V
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
Input Current
a
V
INH
V
INL
I
IN
V
AX
= V
EN
= 2.0 V or 0.8 V
Full
Full
Full
−1
2.0
0.8
1
V
mA
Dynamic Characteristics
Transition Time
e
Break-Before-Make Time
e
Enable Turn-On Time
e
Enable Turn-Off Time
e
Source Off Capacitance
e
t
TRANS
t
BBM
t
ON(EN)
t
OFF(EN)
C
S( ff)
S(off)
C
D( ff)
D(off)
C
D( )
D(on)
V
S1
= 3.5 V, V
S8
=
−3.5
V, (DG3408)
V
S1b
= 3.5 V, V
S4b
=
−3.5
V, (DG3409)
See Figure 2
V
S(all)
= V
DA
= 3.5 V
See Figure 4
V
AX
= 0 V, V
S1
= 3.5 V (DG3408)
V
AX
= 0 V V
S1b
= 3 5 V (DG3409)
V,
3.5
See Figure 3
DG3408
DG3409
DG3408
DG3409
DG3408
DG3409
Room
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
1
68
16
ns
68
58
23
23
223
113
246
137
pF
88
94
78
81
89
94
f = 1 MHz V
S
= 0 V V
EN
= 2 0 V
MHz,
V,
2.0
f = 1 MHz V
D
= 0 V V
EN
=2 0 V
MHz,
V,
=2.
f = 1 MHz V
D
= 0 V V
EN
= 0 V
MHz,
V,
Drain Off Capacitance
e
Drain On Capacitance
e
Power Supplies
Power Supply Current
I+
I−
V
EN
= V
A
= 0 V or V+
Room
Room
−1.0
1.0
mA
www.vishay.com
4
Document Number: 72858
S-40539—Rev. A, 29-Mar-04
DG3408/3409
New Product
Vishay Siliconix
SPECIFICATIONS (SINGLE SUPPLY 5 V)
Test Conditions
Unless Otherwise Specified
Parameter
Analog Switch
Analog Signal Range
e
On-Resistance
r
ON
Match Between Channels
g
On-Resistance Flatness
i
V
ANALOG
r
ON
Dr
ON
r
ON
Flatness
I
S(off)
Switch Off Leakage Current
a
I
D(off)
Channel On Leakage Current
a
I
D(on)
V+ = 4.5 V, V
D
= 1 V or 3.5 V, I
S
= 50 mA
V+ = 4.5 V, V
D
or V
S
= 1 V or 3.5 V, I
S
= 50 mA
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
−2
−20
−2
−20
−2
−20
0
7
5
10.5
11
3.6
9
2
20
2
20
2
20
nA
W
V
Limits
−40
to 85_C
Symbol
V+ = 5 V,
"10%,
V− = 0 V
V
A
, V
EN
= 0.8 V or 2.0 V
f
Temp
b
Min
c
Typ
d
Max
c
Unit
V+ = 5.5 V
V
S
= 1 V or 4 V, V
D
= 4 V or 1 V
V+ = 5.5 V
V
D
= V
S
= 1 V or 4 V, Sequence Each Switch On
Digital Control
Logic High Input Voltage
Logic Low Input Voltage
Input Current
a
V
INH
V
INL
I
IN
V+ = 5 V
V
AX
= V
EN
= 2.0 V or 0.8 V
Full
Full
Full
−1
2.0
0.8
1
V
mA
Dynamic Characteristics
Transition Time
e
Break-Before-Make Time
e
Enable Turn-On Time
e
Enable Turn-Off Time
e
Charge Injection
e
Off Isolation
e, h
Crosstalk
e
Source Off Capacitance
e
t
TRANS
t
OPEN
t
ON(EN)
t
OFF(EN)
Q
OIRR
X
TALK
C
S( ff)
S(off)
C
D( ff)
D(off)
C
D( )
D(on)
V
S1
= 3.5 V, V
S8
= 0 V, (DG3408)
V
S1b
= 3.5 V, V
S4b
= 0 V, (DG3409)
See Figure 2
V
S(all)
= V
DA
= 3.5 V
See Figure 4
V
AX
= 0 V, V
S1
= 3.5 V (DG3408)
V
AX
= 0 V V
S1b
= 3 5 V (DG3409)
V,
3.5
See Figure 3
C
L
= 1 nF, R
GEN
= 0
W,
V
GEN
= 0 V
R
L
= 1 kW f = 100 kHz
kW,
f = 1 MHz V
S
= 0 V V
EN
= 0 V
MHz,
V,
f = 1 MHz V
D
= 0 V V
EN
= 2 0 V
MHz,
V,
2.0
f = 1 MHz V
D
= 0 V V
EN
= 0 V
MHz,
V,
DG3408
DG3409
DG3408
DG3409
DG3408
DG3409
Room
Full
Room
Full
Room
Full
Room
Full
Room
Room
Room
Room
Room
Room
Room
Room
Room
2
73
29
ns
74
38
20
−81
−85
22
24
223
113
244
143
pF
94
104
57
61
pC
dB
94
104
Drain Off Capacitance
e
Drain On Capacitance
e
Power Supplies
Power Supply Current
I+
V
EN
= V
A
= 0 V or V+
Room
1.0
mA
Document Number: 72858
S-40539—Rev. A, 29-Mar-04
www.vishay.com
5
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参数对比
与DG3409DB-T1-E3相近的元器件有:DG3408DB-T1-E3。描述及对比如下:
型号 DG3409DB-T1-E3 DG3408DB-T1-E3
描述 IC DUAL 4-CHANNEL, DIFFERENTIAL MULTIPLEXER, PBGA16, 4 X 4 MM, 0.50 MM PITCH, LEAD FREE, BUMP CHIP-16, Multiplexer or Switch IC 8-CHANNEL, SGL ENDED MULTIPLEXER, PBGA16, 4 X 4 MM, 0.50 MM PITCH, LEAD FREE, BUMP CHIP-16, Multiplexer or Switch
是否无铅 不含铅 不含铅
是否Rohs认证 符合 符合
厂商名称 Vishay(威世) Vishay(威世)
零件包装代码 BCC BCC
包装说明 VFBGA, BGA16,4X4,20 VFBGA, BGA16,4X4,20
针数 16 16
Reach Compliance Code unknown unknown
模拟集成电路 - 其他类型 DIFFERENTIAL MULTIPLEXER SINGLE-ENDED MULTIPLEXER
JESD-30 代码 S-PBGA-B16 S-PBGA-B16
JESD-609代码 e1 e1
长度 4 mm 4 mm
湿度敏感等级 1 1
负电源电压最大值(Vsup) -6 V -6 V
负电源电压最小值(Vsup) -3 V -3 V
标称负供电电压 (Vsup) -5 V -5 V
信道数量 4 8
功能数量 2 1
端子数量 16 16
通态电阻匹配规范 3.6 Ω 3.6 Ω
最大通态电阻 (Ron) 8 Ω 8 Ω
最高工作温度 85 °C 85 °C
最低工作温度 -40 °C -40 °C
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 VFBGA VFBGA
封装等效代码 BGA16,4X4,20 BGA16,4X4,20
封装形状 SQUARE SQUARE
封装形式 GRID ARRAY, VERY THIN PROFILE, FINE PITCH GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度) 260 260
电源 +-3/+-6/3/12 V +-3/+-6/3/12 V
认证状态 Not Qualified Not Qualified
座面最大高度 0.753 mm 0.753 mm
最大信号电流 0.1 A 0.1 A
最大供电电流 (Isup) 0.001 mA 0.001 mA
最大供电电压 (Vsup) 6 V 6 V
最小供电电压 (Vsup) 3 V 3 V
标称供电电压 (Vsup) 5 V 5 V
表面贴装 YES YES
最长断开时间 78 ns 78 ns
最长接通时间 88 ns 88 ns
切换 BREAK-BEFORE-MAKE BREAK-BEFORE-MAKE
技术 BICMOS BICMOS
温度等级 INDUSTRIAL INDUSTRIAL
端子面层 TIN SILVER COPPER TIN SILVER COPPER
端子形式 BALL BALL
端子节距 0.5 mm 0.5 mm
端子位置 BOTTOM BOTTOM
处于峰值回流温度下的最长时间 40 40
宽度 4 mm 4 mm
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