DMN3008SFGQ
30V N-CHANNEL ENHANCEMENT MODE MOSFET
POWERDI
Product Summary
ADVANCE INFORMATION
BV
DSS
R
DS(ON)
max
4.4mΩ @ V
GS
= 10V
5.5mΩ @ V
GS
= 4.5V
I
D
max
T
C
= +25°
C
62A
56A
Features and Benefits
Low R
DS(ON)
– Ensures on-state losses are minimized
Small, form factor thermally efficient package enables higher
density end products
Occupies only 33% of the board area occupied by SO-8 enabling
smaller end products
100% Unclamped Inductive Switch (UIS) Test in Production
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
30V
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
Backlighting
Power Management Functions
DC-DC Converters
Mechanical Data
PowerDI3333-8
Case: PowerDI3333-8
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.072 grams (Approximate)
D
S
S
Pin 1
S
G
G
D
D
D
D
S
Top View
Equivalent Circuit
Bottom View
Ordering Information
(Note 5)
Part Number
DMN3008SFGQ-7
DMN3008SFGQ-13
Notes:
Case
PowerDI3333-8
PowerDI3333-8
Packaging
2,000/Tape & Reel
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
PowerDI3333-8
N08
POWERDI is a registered trademark of Diodes Incorporated.
YYWW
N08 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 16 = 2016)
WW = Week Code (01 to 53)
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
1 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMN3008SFGQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current (Note 7) V
GS
= 10V
t<10s
Steady
State
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Maximum Continuous Body Diode Forward Current (Note 7)
Avalanche Current, L = 0.1mH
Avalanche Energy, L = 0.1mH
T
A
= +25°
C
T
A
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
T
C
= +25°
C
T
C
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
30
±20
17.6
14.1
23.0
18.4
62
80
2
45
101
Units
V
V
A
A
A
A
A
A
mJ
ADVANCE INFORMATION
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Total Power Dissipation (Note 7)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 7)
Operating and Storage Temperature Range
T
A
= +25°
C
T
A
= +70°
C
Steady State
t < 10s
T
A
= +25°
C
T
A
= +70°
C
Steady State
t < 10s
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
0.9
0.6
134
79
2.1
1.3
58
34
4.8
-55 to +150
Units
W
°
C/W
°
C/W
W
°
C/W
°
C/W
°
C/W
°
C
Electrical Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
OFF CHARACTERISTICS
(Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
(Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
(Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
30
—
—
1
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
3.9
4.6
0.75
3,690
530
459
0.9
41
86
9.2
18.6
5.7
14.0
63.7
28.4
19.3
10.7
Max
—
10
±100
2.3
4.4
5.5
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 13.5A
V
GS
= 4.5V, I
D
= 13.5A
V
GS
= 0V, I
S
= 1A
V
DS
= 10V, V
GS
= 0V,
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= 24V, I
D
= 27A
V
DD
= 15V, V
GS
= 10V,
R
L
= 1.11Ω, R
G
= 4.7Ω,
I
D
= 13.5A
I
F
= 13.5A, di/dt=100A/μs
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
POWERDI is a registered trademark of Diodes Incorporated.
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
2 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMN3008SFGQ
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
10.0
8.0
6.0
4.0
2.0
0.0
0
30
V
GS
= 10V
V
GS
= 4.5V
V
GS
= 4.0V
V
GS
= 3.0V
V
GS
= 2.5V
V
DS
= 5.0V
25
I
D
, DRAIN CURRENT (A)
)
A
(
T
N 20
E
R
R
U
C 15
N
I
A
R
D 10
,
D
I
5
ADVANCE INFORMATION
I
D
, DRAIN CURRENT (A)
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
V
GS
= 2.0V
V
GS
= 1.8V
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
2
0
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
4
0.006
0.03
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.0055
0.005
0.025
V
GS
= 4.5V
0.02
0.0045
0.004
V
GS
= 10V
0.015
I
D
= 13.5A
0.0035
0.003
0.01
0.005
0.0025
0.002
0 2
4 6 8 10 12 14 16 18 20 22 24 26 28 30
I
D
, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
0
2
4
6
8 10 12 14 16 18
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ()
)
(
E
C
N
A
T
S
I
S
E
R
-
N
O
E
C
R
U
O
S
-
N
I
A
R
D
,
)
N
R
0.01
0.009
V
GS
= 4.5V
1.8
R
DS(ON)
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.008
0.007
1.6
V
GS
= 4.5V
I
D
= 13.5A
T
A
= 150°
C
T
A
= 125°
C
1.4
0.006
0.005
T
A
= 85°
C
1.2
V
GS
= 10V
I
D
= 13.5A
T
A
= 25°
C
0.004
0.003
0.002
0.001
0
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
30
T
A
= -55°
C
1
0.8
O
(
S
D
0.6
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
POWERDI is a registered trademark of Diodes Incorporated.
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
3 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMN3008SFGQ
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
0.01
0.009
0.008
0.007
0.006
0.005
0.004
0.003
0.002
0.001
0
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 On-Resistance Variation with Temperature
V
GS
= 10V
I
D
= 13.5A
V
GS
= 4.5V
I
D
= 13.5A
1.8
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
)
V
(
E
G
A
T
L
O
V
D
L
O
H
S
E
R
H
T
E
T
A
G
,
)
h
V
1.6
1.4
1.2
I
D
= 1mA
ADVANCE INFORMATION
1
0.8
0.6
0.4
0.2
-50
I
D
= 250µA
t
(
S
G
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation
vs. Junction Temperature
30
I
DSS
, DRAIN LEAKAGE CURRENT (nA)
100000
)
A
n
( 10000
T
N
E
R
R 1000
U
C
E
G
A
100
K
A
E
L
N
10
I
A
R
D
,
S
1
S
D
I
0.1
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
5
10
15
20
25
30
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Drain-Source Leakage Current
vs. Voltage
0
T
A
= 150°
C
25
)
A
(
T
N 20
E
R
R
U
C 15
E
C
R
U
O 10
S
,
S
I
5
I
S
, SOURCE CURRENT (A)
T
A
= 125°
C
T
A
= 150°
C
T
A
= 125°
C
T
A
= 85°
C
T
A
= 25°
C
T
A
= -55°
C
T
A
= 85°
C
T
A
= 25°
C
0
10
V
GS
GATE THRESHOLD VOLTAGE (V)
8
V
DS
= 24V
I
D
= 27A
6
4
2
0
0
10
20 30 40 50 60 70 80 90 100
Q
g
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
4 of 7
www.diodes.com
May 2016
© Diodes Incorporated
DMN3008SFGQ
10000
f = 1MHz
1000
R
DS(ON)
Limited
C
T
, JUNCTION CAPACITANCE (pF)
ADVANCE INFORMATION
C
iss
1000
C
oss
C
rss
100
)
A
(
T
N
E 10
R
R
U
C
DC
N
P
W
= 10s
I 1
A
P
W
= 1s
R
D
P
W
= 100ms
,
D
P
W
= 10ms
I
-
T
J(max)
= 150°
C
P
W
= 1ms
0.1
T
A
= 25°
C
V
GS
= 10V
Single Pulse
DUT on 1 * MRP Board
0.01
P
W
= 100µs
100
0
5
10
15
20
25
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Typical Junction Capacitance
1
30
-I
D
, DRAIN CURRENT (A)
0.01
0.1
1
10
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 13 SOA, Safe Operation Area
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
R
R
JA
(t) = r(t)
* R
θJA
θJA
(t) = r(t)
* R
JA
R
JA
= 136癈 /W
R
θJA
= 136℃/W
Duty Cycle,
D = t1/
Duty Cycle,
D = t1/t2
t2
0.001
0.01
0.1
1
10
t1, PULSE DURATION TIMES (sec)
t1, PULSE DURATION TIME (sec)
Figure 14 Transient Thermal Resistance
Figure 14 Transient Thermal Resistance
100
1000
0.001
0.0001
POWERDI is a registered trademark of Diodes Incorporated.
DMN3008SFGQ
Document number: DS38901 Rev. 1 - 2
5 of 7
www.diodes.com
May 2016
© Diodes Incorporated
