DMP2066LVT
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
-20V
R
DS(ON)
max
45mΩ @ V
GS
= -4.5V
65mΩ @ V
GS
= -2.5V
I
D
max
T
A
= +25°C
-4.5A
-3.8A
Features and Benefits
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
NEW PRODUCT
Description
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(on)
), and yet maintain superior switching performance,
making it ideal for high-efficiency power management applications.
Mechanical Data
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
Applications
General Purpose Interfacing Switch
Power Management Functions
SOT26
D
D
G
1
2
3
6
5
4
D
D
S
D
G
Top View
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP2066LVT-7
DMP2066LVT-13
Notes:
Case
SOT26
SOT26
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds4. For packaging details, go to our website at http://www.diodes.com.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT26
26P = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y or = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Shanghai A/T Site
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
Feb
2
2012
Z
Mar
3
Apr
4
2013
A
May
5
Jun
6
2014
B
Jul
7
2015
C
Aug
8
Sep
9
2016
D
Oct
O
Nov
N
2017
E
Dec
D
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
1 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMP2066LVT
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5) Continuous
T
A
= +25°C
T
A
= +70°C
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
Value
-20
8
-4.5
-3.7
-20
-2.0
Unit
V
V
A
A
A
NEW PRODUCT
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Body-Diode Continuous Current (Note 5)
Thermal Characteristics
Total Power Dissipation (Note 5)
(@T
A
= +25°C, unless otherwise specified.)
Symbol
P
D
Steady State
t<10s
Steady State
t<10s
R
θJA
P
D
R
θJA
T
J,
T
STG
Value
1.2
100
74
1.8
70
46
-55 to +150
Units
W
°C/W
W
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics
Characteristic
STATIC PARAMETERS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
(@T
A
= +25°C, unless otherwise specified.)
Symbol
BV
DSS
Min
-20
—
-0.4
-0.5
10
Typ
—
25
33
-0.72
—
1,496
130
116
14.4
2.6
2.7
8.5
11
61
25
Max
-1
-10
-100
100
-1.5
45
65
72
-1.4
—
2,990
260
230
25
5
5.5
30
60
130
100
ns
V
DS
= -5V, V
GS
= -4.5V,
I
D
= -1A, R
G
= 6.0Ω
nC
V
DS
= -10V, V
GS
= -4.5V,
I
D
= -4.5A
Unit
V
μA
μA
nA
V
mΩ
mΩ
V
A
pF
pF
pF
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Test Condition
I
D
= -250µA, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= -16V, V
GS
= 0V
V
DS
= 0V, V
GS
=
8V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -4.5V, I
D
= -4.5A
V
GS
= -2.5V, I
D
= -3.8A
V
GS
= -4.5V, I
D
= -4.5A
I
S
= -2.1A, V
GS
= 0V
V
DS
≦5V,
V
GS
= 4.5V
@ T
J
= +55°C (Note 8)
Zero Gate Voltage Drain Current @T
J
= +150°C (Note 8)
Gate-Body Leakage Current
Gate Threshold Voltage
Static Drain-Source On-Resistance
Static Drain-Source On-Resistance @ T
J
= +125°C (Note 8)
Diode Forward Voltage
On State Drain Current (Note 8)
DYNAMIC PARAMETERS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Notes:
I
DSS
I
DSS
I
GSS
V
GS(th)
R
DS (ON)
R
DS (ON)
V
SD
I
D(ON)
C
iss
C
oss
C
rss
Q
G
Q
GS
Q
GD
t
d(on)
t
r
t
d(off)
t
f
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
2 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMP2066LVT
20
20
I
D
, DRAIN CURRENT (A)
NEW PRODUCT
10
I
D
, DRAIN CURRENT (A)
0.5
1.5 2 2.5 3 3.5
4 4.5
V
DS
, DRAIN -SOURCE VOLTAGE(V)
Figure 1 Typical Output Characteristics
1
5
15
15
10
5
5
0
0
0
0
0.5
1
1.5
2
2.5
V
GS
, GATE SOURCE VOLTAGE(V)
Figure 2 Typical Transfer Characteristics
T
A
=150°C
T
A
=85°C
T
A
=125°C
3
0.08
0.05
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE(
)
V
GS
= 10V
0.04
0.06
V
GS
= 1.8V
V
GS
= 2.5V
0.03
0.04
0.02
T
A
=25°C
T
A
=-55°C
0.02
V
GS
= 4.5V
0.01
0
0
5
10
15
I
D
, DRAIN SOURCE CURRENT
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
20
0
0
5
10
15
I
D
, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (
)
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 5 On-Resistance Variation with Temperature
1.7
0.06
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(Normalized)
1.5
0.05
1.3
0.04
1.1
0.03
0.9
0.02
0.7
0.01
0.5
-50
0
-50
-25
0
25
50
75
100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 6 On-Resistance Variation with Temperature
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
3 of 6
www.diodes.com
February 2015
© Diodes Incorporated
1.2
20
DMP2066LVT
V
GS(th)
, GATE THRESHOLD VOLTAGE (V)
1
I
S
, SOURCE CURRENT (A)
16
0.8
12
T
A
= 25
C
0.6
I
D
= -250µA
I
D
= 1mA
NEW PRODUCT
8
0.4
0.2
4
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (
C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
-50
0
0.2
0.4
0.6
0.8
1
1.2
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
100000
T
A
= 150
C
10000
f = 1MHz
10000
C
T
, JUNCTION CAPACITANCE (pF)
I
DSS
, LEAKAGE CURRENT (nA)
C
ISS
1000
1000
100
T
A
= 85
C
10
T
A
= 25
C
C
OSS
C
RSS
1
100
0
5
10
15
20
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
0
-4
-8
-12
-16
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
-20
5
V
GS
, GATE SOURCE VOLTAGE (V)
4
3
2
1
0
0
2
4
6
8
10 12 14
16
Q
G
, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge Characteristics
18
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
4 of 6
www.diodes.com
February 2015
© Diodes Incorporated
DMP2066LVT
Package Outline Dimensions
TSOT26
D
e1
E1
E
c
4x
1
6x b
L
L2
e
A
A2
A1
TSOT26
Dim Min Max Typ
A
1.00
A1
0.01 0.10
A2
0.84 0.90
D
2.90
E
2.80
E1
1.60
b
0.30 0.45
c
0.12 0.20
e
0.95
e1
1.90
L
0.30 0.50
L2
0.25
θ
0°
8°
4°
θ1
4°
12°
All Dimensions in mm
NEW PRODUCT
Suggested Pad Layout
TSOT26
C
C
Y1
Dimensions Value (in mm)
C
0.950
X
0.700
Y
1.000
Y1
3.199
Y (6x)
X (6x)
DMP2066LVT
Document number: DS36578 Rev. 4 - 2
5 of 6
www.diodes.com
February 2015
© Diodes Incorporated
