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DTA114TKA

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon

器件类别:晶体管   

厂商名称:长电科技(JCET)

厂商官网:http://www.cj-elec.com/

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器件参数
参数名称
属性值
厂商名称
长电科技(JCET)
包装说明
,
Reach Compliance Code
unknown
Is Samacsys
N
最大集电极电流 (IC)
0.1 A
最小直流电流增益 (hFE)
100
元件数量
1
极性/信道类型
PNP
最大功率耗散 (Abs)
0.2 W
表面贴装
YES
晶体管元件材料
SILICON
Base Number Matches
1
文档预览
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTA114TE/ DTA114TUA
/DTA114TCA/ DTA114TKA/ DTA114TSA
TRANSISTOR (PNP)
FEATURES
·
Built-in bias resistors enable the configuration of an
inverter circuit without connecting extemal input resistors.
·
The bias resistors conisit of thin-film resistors with
complete isolation to without connecting extemal input.
They also have the advantage of almost completely
Eliminating parasitic effects.
·
Only the on/off conditions need to be set for operation,
marking device design easy.
PIN CONNENCTIONS AND MARKING
DTA114TE
DTA114TUA
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 94
SOT-323
Addreviated symbol: 94
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-523
DTA114TKA
(1) Base
(2) Emitter
(3) Collector
DTA114TCA
DTA114ECA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-23-3L
Addreviated symbol: 94
SOT-23
Addreviated symbol: 94
DTA114TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
MAXIMUM RATINGS*
T
A
=25
unless otherwise noted
Symbol
Parameter
E
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
, T
stg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction and Storage Temperature
150
LIMITS(DTA114T□)
UA
KA
-50
-50
-5
-100
200
-55~+150
300
CA
SA
V
V
V
mA
mW
Units
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter
voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Imput resistor
breakdown
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R1
unless
Test
otherwise
specified)
MIN
-50
-50
-5
-0.5
-0.5
100
250
600
-0.3
250
7
10
13
V
MHz
TYP
MAX
UNIT
V
V
V
uA
uA
conditions
Ic=-
50µ
A,I
E
=0
Ic=-
1
mA,I
B
=0
I
E
=-
50µ
A,I
C
=0
V
CB
=-
50
V,I
E
=0
V
EB
=-
4
V,I
C
=0
V
CE
=-
5
V,I
C
=-
1
mA
I
C
=-10mA,I
B
=-1mA
V
CE
=-
10
V,I
C
=-
5
mA, f=
100
MHz
Typical Characteristics
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