100mA/50V Digital transistors(with built-in resistors)
DTC044EM / DTC044EEB / DTC044EUB
Features
1) Built-in bias resistors enable the configuration of
an inverter circuit without connecting external input resistors.
(See equivalent circuit)
2) The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation,
making the device design easy.
Dimensions
(Unit : mm)
VMT3
Abbreviated symbol : 41
EMT3F
(3)
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
(1)
(2)
Abbreviated symbol : 41
UMT3F
0.32
2.0
0.9
0.53
0.425
(3)
(1)
0.65 0.65
1.3
(2)
0.13
Abbreviated symbol : 41
Packaging
specifications
Package
Packaging Type
Type
Code
Basic ordering
unit (pieces)
DTC044EM
DTC044EEB
DTC044EUB
Equivalent
circuit
VMT3
Taping
T2L
8000
○
-
-
EMT3F
Taping
TL
3000
-
○
-
UMT3F
Taping
TL
3000
-
-
○
IN
R
1
IN
R
2
GND
OUT
OUT
GND
R
1
=R
2
=47kΩ
Absolute
maximum
(Ta=25C)
Parameter
Supply voltage
Input voltage
Collector current *1
Output current
Power dissipation *2
Junction temperature
Range of storage temperature
*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
Symbol
V
CC
V
IN
I
C(max)
I
O
P
D
Tj
Tstg
M
Limits(DTC044E□)
EB
UB
50
40
-10
100
30
150
150
-55 to +150
200
0.53
0.425
Applications
Inverter, Interface, Driver
1.25
2.1
Unit
V
V
V
mA
mA
mW
C
C
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©2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.08 - Rev.A
DTC044EM / DTC044EEB / DTC044EUB
Electrical
characteristics
(Ta=25C)
Parameter
Symbol
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency *
Input resistance
Resistance ratio
* Characteristics of built-in transistor
Max.
0.8
-
0.15
0.18
500
-
-
61.1
1.2
Unit
V
V
V
mA
nA
-
MHz
k
-
Test Conditions
V
CC
=5V / I
O
=100uA
V
O
=0.3V / I
O
=2mA
I
O
=5mA / I
I
=0.5mA
V
I
=5V
V
CC
=50V / V
I
=0V
V
O
=10V / I
O
=5mA
V
CE
=10V /I
E
=-5mA
f=100MHz
Data Sheet
Min.
-
3.0
-
-
-
80
-
32.9
0.8
Typ.
-
-
0.05
-
-
-
250
47
1.0
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Electrical
characteristics curves
100
V
o
=0.3V
OUTPUT CURRENT : I
O
(mA)
INPUT VOLTAGE : V
I(on)
(V)
1
10
V
CC
=5V
10
Ta=-40ºC
Ta=25ºC
Ta=75ºC
Ta=125ºC
0.1
1
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.01
0.1
0.1
1
10
100
OUTPUT CURRENT : I
O
(mA)
0.001
0
0.5
1
1.5
2
2.5
3
INPUT VOLTAGE : V
I(off)
(V)
Input Voltage vs. Output Current (ON characteristics)
Input Voltage vs. Output Current (OFF characteristics)
1000
OUTPUT VOLTAGE : V
O(on)
(V)
V
o
=10V
DC CURRENT GAIN : G
I
1
I
O
/I
I
=10
100
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
0.1
10
0.01
Ta=125ºC
Ta=75ºC
Ta=25ºC
Ta=-40ºC
1
0.1
1
10
100
OUTPUT CURRENT : I
O
(mA)
0.001
0.1
1
10
100
OUTPUT CURRNET : I
O
(mA)
DC Current Gain vs. Output Current
Output Voltage vs. Output Current
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.08 - Rev.A
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R1120A
