JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
Digital transistors (built-in resistors)
DTC144TE/ DTC144TUA/
DTC144TCA/DTC144TKA/DTC144TSA
DIGITAL TRANSISTOR (NPN)
Features
1) Built-in bias resistors enable the configuration of an inverter circuit without
connecting external input resistors (see equivalent circuit).
2) The bias resistors consist of thin-film resistors with complete isolation to
allow negative biasing of the input. They also have the advantage of almost
completely eliminating parasitic effects.
3) Only the on/off conditions need to be set for operation, making device
design easy.
PIN CONNENCTIONS AND MARKING
DTC144TE
(1) Base
(2) Emitter
(3) Collector
Addreviated symbol: 06
SOT-323
Addreviated symbol: 06
DTC144TUA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-523
DTC144TKA
(1) Base
(2) Emitter
(3) Collector
DTC144TCA
DTA114ECA
(1) Base
(1) Base
(2) Emitter
(2) Emitter
(3) Collector
(3) Collector
SOT-23-3L
Addreviated symbol: 06
SOT-23
Addreviated symbol: 06
DTC144TSA
(1) Emitter
(2) Collector
(3) Base
TO-92S
MAXIMUM RATINGS*
T
A
=25
℃
unless otherwise noted
Symbol
Parameter
E
V
CBO
V
CEO
V
EBO
I
C
P
C
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation
Junction temperature
Junction and Storage Temperature
150
LIMITS(DTC144T□)
UA
KA
50
50
5
100
200
300
CA
SA
V
V
V
mA
mW
℃
℃
Units
Tj
T
J
, T
stg
150
-55~+150
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Imput resistor
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
R1
unless
Test
otherwise
conditions
specified)
MIN
50
50
5
0.5
0.5
100
300
600
0.3
250
32.9
47
61.1
V
MHz
kΩ
TYP
MAX
UNIT
V
V
V
uA
uA
Ic=
50µ
A,I
E
=0
Ic=
1
mA,I
B
=0
I
E
=
50µ
A,I
C
=0
V
CB
=
50
V,I
E
=0
V
EB
=
4
V,I
C
=0
V
CE
=
5
V,I
C
=
1
mA
I
C
=5mA,I
B
=0.5mA
V
CE
=
10
V,I
E
=-
5
mA, f=
100
MHz
Typical Characteristics
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