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E0900NC450

Rectifier Diode, 1 Phase, 1 Element, 969A, 4500V V(RRM), Silicon,

器件类别:分立半导体    二极管   

厂商名称:IXYS

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器件参数
参数名称
属性值
厂商名称
IXYS
包装说明
O-XEDB-N2
Reach Compliance Code
unknown
ECCN代码
EAR99
应用
GENERAL PURPOSE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
JESD-30 代码
O-XEDB-N2
最大非重复峰值正向电流
16800 A
元件数量
1
相数
1
端子数量
2
最大输出电流
969 A
封装主体材料
UNSPECIFIED
封装形状
ROUND
封装形式
DISK BUTTON
认证状态
Not Qualified
最大重复峰值反向电压
4500 V
最大反向恢复时间
2.4 µs
表面贴装
YES
端子形式
NO LEAD
端子位置
END
文档预览
Provisional Data
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
V
R(d.c.)
Repetitive peak reverse voltage (note 1)
Maximum reverse d.c. voltage (note 1)


2800
969
634
379
1810
1580
15270
16800
1.17×10
1.41×10
Page 1 of 11
High Power Sonic FRD
Types E0900NC450 to E0900NC520
MAXIMUM
LIMITS
4500 - 5200
4600 - 5300
Non-repetitive peak reverse voltage (note 1)


OTHER RATINGS
(note 6)
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
It
It
2
2
Mean forward current, T
sink
=55°C (note 2)
Mean forward current. T
sink
=100°C (note 2)
Mean forward current. T
sink
=100°C (note 3)
D.C. forward current, T
sink
=25°C (note 4)
Nominal RMS forward current, T
sink
=25°C (note 2)
Peak non-repetitive surge t
p
=10ms, V
RM
=60%V
RRM
(note 5)
Peak non-repetitive surge t
p
=10ms, V
RM
≤10V
(note 5)
I t capacity for fusing t
p
=10ms, V
RM
=60%V
RRM
(note 5)
2
2


T
j op
T
stg
Operating temperature range
Storage temperature range
Provisional Data Sheet. Types E0900NC450 to E0900NC520 Issue 3
I t capacity for fusing t
p
=10ms, V
RM
≤10V
(note 5)
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 150°C T
j
initial.
6)
Current (I
F
) ratings have been calculated using V
T0
and r
T
(see page 2)

UNITS
V
V
V
WESTCODE
An
Date:- 24 Feb, 2005
Data Sheet Issue:- 3
IXYS
Company
MAXIMUM
LIMITS
UNITS
A
A
A
A
A
A
A
6
6
As
As
°C
°C
2
2
-40 to +150
-40 to +150
February, 2005
WESTCODE
An IXYS Company
Characteristics
PARAMETER
V
FM
V
T0
r
T
V
T01
r
T1
V
FRM
Maximum peak forward voltage
Threshold voltage
Slope resistance
Threshold voltage
Slope resistance
Maximum forward recovery voltage
High Power Sonic FRD Types E0900NC450 to E0900NC520
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
2.70
3.50
-
-
-
-
MAX. TEST CONDITIONS
(Note 1)
3.15
4.00
2.14
1.15
2.08
1.19
130
I
FM
=900A
I
FM
=1500A
UNITS
V
V
mΩ
V
mΩ
V
Current range 969A-2907A (Note 2)
Current range 900A-2700A
di/dt = 2000A/µs, T
j
=25°C
I
RRM
Q
rr
Q
ra
I
rm
t
rr
Q
rr
Q
ra
I
rm
t
rr
R
thJK
F
W
t
Peak reverse current
Recovered charge
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Recovered charge


-
-
200
10
di/dt = 2000A/µs
-
Rated V
RRM
, T
j
=25°C
-
90
-
Rated V
RRM
2200
1340
2.2
1440
1600
-
-
900
-
260
2.4
-
350
-
-
220
0.020
Double side cooled
-
0.040
26
-
Single side cooled
-
(Note 4)
510
Page 2 of 11

February, 2005
mA
µC
µC
A
µs
µC
µC
A
µs
K/W
kN
g
I
FM
=900A, t
p
=1ms, di/dt=2000A/µs,
V
r
=2800V, 50% Chord. (note 3)
Recovered charge, 50% Chord
Reverse recovery current
Reverse recovery time
Thermal resistance, junction to heatsink
Mounting force
Weight


Provisional Data Sheet. Types E0900NC450 to E0900NC520 Issue 3
Notes:-
1) Unless otherwise indicated T
j
=150°C.
2) V
T0
and r
T
were used to calculate the current ratings illustrated on page one.
3) Figures 3-7 were compiled using these conditions.
4) For clamp forces outside these limits, please consult factory.


-
-
-
-
-
19
-
I
FM
=900A, t
p
=1000µs, di/dt=200A/µs,
V
r
=100V, 50% Chord.
WESTCODE
An IXYS Company
Notes on Ratings and Characteristics
1.0 De-rating Factor
High Power Sonic FRD Types E0900NC450 to E0900NC520
A blocking voltage de-rating factor of 0.13% per °C is applicable to this device for T
j
below 25°C.
2.0 ABCD Constants
These constants (applicable only over current range of V
F
characteristic in Figure 1) are the coefficients of
the expression for the forward characteristic given below:
where I
F
= instantaneous forward current.
3.0 Reverse recovery ratings
(i) Q
ra
is based on 50% I
rm
chord as shown in the figure below.
(ii) Q
rr
is based on a 150µs integration time.
150
µs
i.e.


(iii)
Provisional Data Sheet. Types E0900NC450 to E0900NC520 Issue 3


Q
rr
=
i
0
K Factor
=


rr
V
F
=
A
+
B
ln(
I
F
)
+
C
I
F
+
D
I
F
.
dt
t
1
t
2
Page 3 of 11

February, 2005
WESTCODE
An IXYS Company
4.0 Reverse Recovery Loss
High Power Sonic FRD Types E0900NC450 to E0900NC520
The following procedure is recommended for use where it is necessary to include reverse recovery loss.
From waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse
voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed.
Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated
from:
T
K
=
T
j
(
MAX
)
E
[
k
+
f
R
thJK
]
E = Area under reverse loss waveform per pulse in joules (W.s.)
f = Rated frequency in Hz at the original sink temperature.
R
thJK
= d.c. thermal resistance (°C/W)
The total dissipation is now given by:
W
(
tot
)
=
W
(
original
)
+
E
f
This device has a low reverse recovered charge and peak reverse recovery current. When measuring the
charge, care must be taken to ensure that:
(a) AC coupled devices such as current transformers are not affected by prior passage of high
amplitude forward current.
(b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope
to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal.
(c) Measurement of reverse recovery waveform should be carried out with an appropriate critically
damped snubber, connected across diode anode to cathode. The formula used for the calculation of this
snubber is shown below:


R
2
=
4
V
r
C
S
di dt
Where:
V
r
= Commutating source voltage
C
S
= Snubber capacitance
R = Snubber resistance
Provisional Data Sheet. Types E0900NC450 to E0900NC520 Issue 3


Page 4 of 11
NOTE 1 - Reverse Recovery Loss by Measurement


February, 2005
Where k = 0.2314 (°C/W)/s

WESTCODE
An IXYS Company
5.0 Computer Modelling Parameters
5.1 Device Dissipation Calculations
High Power Sonic FRD Types E0900NC450 to E0900NC520
I
AV
Where V
T0
= 2.14V, r
T
= 1.15mΩ
ff
= form factor (normally unity for fast diode applications)
W
AV
=
T
R
th
T
=
T
j
(
MAX
)
T
K
5.2 Calculation of V
F
using ABCD Coefficients
The constants, derived by curve fitting software, are given in this report for both hot and cold
characteristics. The resulting values for V
F
agree with the true device characteristic over a current range,
which is limited to that plotted.
25°C Coefficients
0.6552042
0.1951974
150°C Coefficients
1.810076
-4
-2


B
C
D
5.795354×10
2.609534×10
Provisional Data Sheet. Types E0900NC450 to E0900NC520 Issue 3


A
A
B
C
D
-4
-2
Page 5 of 11
The forward characteristic I
F
Vs V
F
, on page 6 is represented in two ways;
(i)
the well established V
T0
and r
T
tangent used for rating purposes and
(ii)
a set of constants A, B, C, and D forming the coefficients of the representative equation for V
F
in
terms of I
F
given below:
V
F
=
A
+
B
ln(
I
F
)
+
C
I
F
+
D
I
F


-0.2557603
1.408071×10
9.841939×10

February, 2005
V
T
0
+
V
T
0
+
4
ff
2
r
T
W
AV
=
2
ff
2
r
T
2
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参数对比
与E0900NC450相近的元器件有:E0900NC460、E0900NC470、E0900NC510、E0900NC500、E0900NC520、E0900NC490、E0900NC480。描述及对比如下:
型号 E0900NC450 E0900NC460 E0900NC470 E0900NC510 E0900NC500 E0900NC520 E0900NC490 E0900NC480
描述 Rectifier Diode, 1 Phase, 1 Element, 969A, 4500V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 969A, 4600V V(RRM), Silicon, DIODE 969 A, 4700 V, SILICON, RECTIFIER DIODE, Rectifier Diode Rectifier Diode, 1 Phase, 1 Element, 969A, 5100V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 969A, 5000V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 969A, 5200V V(RRM), Silicon, Rectifier Diode, 1 Phase, 1 Element, 969A, 4900V V(RRM), Silicon, DIODE 969 A, 4800 V, SILICON, RECTIFIER DIODE, Rectifier Diode
厂商名称 IXYS IXYS IXYS IXYS IXYS IXYS IXYS IXYS
包装说明 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
应用 GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
配置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 代码 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2 O-XEDB-N2
最大非重复峰值正向电流 16800 A 16800 A 16800 A 16800 A 16800 A 16800 A 16800 A 16800 A
元件数量 1 1 1 1 1 1 1 1
相数 1 1 1 1 1 1 1 1
端子数量 2 2 2 2 2 2 2 2
最大输出电流 969 A 969 A 969 A 969 A 969 A 969 A 969 A 969 A
封装主体材料 UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
封装形状 ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
封装形式 DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 4500 V 4600 V 4700 V 5100 V 5000 V 5200 V 4900 V 4800 V
最大反向恢复时间 2.4 µs 2.4 µs 2.4 µs 2.4 µs 2.4 µs 2.4 µs 2.4 µs 2.4 µs
表面贴装 YES YES YES YES YES YES YES YES
端子形式 NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
端子位置 END END END END END END END END
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