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EGL1B

Fast Recovery Diode, Case Style : DO-213AB; IAV (A) : 1; VRRM (V) : 100; IFSM (A) : 10; VF (V): 0.95; @IAV (A): 1; IR (µA) TA=25ºC: 5; TRR (nS) : 35

器件类别:分立半导体    二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件:EGL1B

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器件参数
参数名称
属性值
零件包装代码
DO-213AB
制造商包装代码
DO-213AB
文档预览
EGL1A-EGL1J
Surface Mount Rectifiers
VOLTAGE RANGE
: 50 ---
600
V
CURRENT: 1.0 A
Features
Plastic package has underwriters laboratories
flammability classification 94V-0
Glass passivated chip junction
For surface mount applications
1.6± 0.1
DO - 213AA
SOLDERABLE ENDS
D2=D1
0
0.20
High temperature metallurgically bonded construction
Cavity-free glass passivated junction
High temperature soldering guaranteed:450
℃/5
seconds
at terminals.Complete device sub-mersible temperature
of 265℃ for 10 seconds in solder bath
D2
D1
0.5± 0.1
3.5± 0.2
0.5± 0.1
Mechanical Data
Case: JEDEC DO-213AA,molded plastic
Polarity: Color band denotes cathode
Weight: 0.0014 ounces, 0.036 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate current by 20%.
EGL
1A
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
T
T
=75℃
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load (JEDEC Method)
Maximum instantaneous forward voltage @1.0A
Maximum reverse current
@T
A
=25℃
EGL EGL EGL EGL EGL EGL
UNITS
1B
1D
1F
1G
1H
1J
100
70
100
200
140
200
300
210
300
1.0
400
280
400
500
350
500
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
t
rr
C
j
R
θJA
T
j
T
STG
50
35
50
30
A
1.25
1.35
5.0
50
35
15
150
- 55 ---- +175
- 55 ---- +175
1.70
V
µA
ns
pF
K/W
at rated DC blocking voltage @T
A
=125℃
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Typical thermal resistance (Note 3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A,I
R
=1.0A,I
rr
=0.25A
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal resistance from junction to ambient, 0.24×0.24"(6.0×6.0mm) copper pads to each terminal.
Revision:20170701-P1
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t
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:
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www.lgesemi
.c
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mail:lge@lgesemi.com
EGL1A-EGL1J
Surface Mount Rectifiers
Ratings AND Charactieristic Curves
FIG.1 -- FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD RECTIFIED
CURRENT,AMPERES
1 .5
1 .0
FIG.2 -- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
PEAK FORWARD SURGE
CURRENT,AMPERES
30
25
20
15
10
5
0
1
10
100
TL=110
8.3ms SINGLE HALF SINE-WAVE
(JEDEC METHOD)
R E S IS T IV E O R IN D U C T IV E
LOAD
0 .8
0 .6
0 .4
0 .2
0 .2 X 0 .2 "(5 .0 X 5 .0 m m )
COPPER PAD
AREAS
0
25
50
75
100
125
150
175
TERMINAL TEMPERATURE
FIG.3 -- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60HZ
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS FORWARD
CURRENT,AMPERES
100
INSTANTANEOUS REVERSE
LEAKAGE CURRENT(mA)
EG
L1A
-EG
L1D
10
T
A
=125
EG
L1
F-E
GL
EG
1G
L1
H-
EG
L1
J
10
T
A
=1
00
1
1
T
A
=2
5
0.1
0.1
0.01
.6
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
.8
1.0
1.2
1.4
1.6
1.8
2.0
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE(V)
FIG.5 -- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE(pF)
PERCENT OF RATED PEAK REVERSE VOLTAGE. (
)
FIG.6 -- TYPICAL TRANSIENT THERMAL IMPEDANCE
60
40
20
10
TRANSIENT THERMAL IMPEDANCE
(
o
C/W)
100
100
f=1MHz
T
J
=25
10
4
2
1
.1
.2
1
.
4
1.0
2
4
1
0
2
0
4
0
1
00
0.1
0.01
0.1
1
10
100
REVERSE VOLTAGE(V)
T,PULSE DURATION,
Revision:20170701-P1
ht
t
p
:
//
www.lgesemi
.c
o
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mail:lge@lgesemi.com
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参数对比
与EGL1B相近的元器件有:EGL1A、EGL1D、EGL1G、EGL1J。描述及对比如下:
型号 EGL1B EGL1A EGL1D EGL1G EGL1J
描述 Fast Recovery Diode, Case Style : DO-213AB; IAV (A) : 1; VRRM (V) : 100; IFSM (A) : 10; VF (V): 0.95; @IAV (A): 1; IR (µA) TA=25ºC: 5; TRR (nS) : 35 Fast Recovery Diode, Case Style : DO-213AB; IAV (A) : 1; VRRM (V) : 50; IFSM (A) : 10; VF (V): 0.95; @IAV (A): 1; IR (µA) TA=25ºC: 5; TRR (nS) : 35 Fast Recovery Diode, Case Style : DO-213AB; IAV (A) : 1; VRRM (V) : 200; IFSM (A) : 10; VF (V): 0.95; @IAV (A): 1; IR (µA) TA=25ºC: 5; TRR (nS) : 35 Fast Recovery Diode, Case Style : DO-213AB; IAV (A) : 1; VRRM (V) : 400; IFSM (A) : 10; VF (V): 1.25; @IAV (A): 1; IR (µA) TA=25ºC: 5; TRR (nS) : 35 Fast Recovery Diode, Case Style : DO-213AB; IAV (A) : 1; VRRM (V) : 600; IFSM (A) : 10; VF (V): 1.7; @IAV (A): 1; IR (µA) TA=25ºC: 5; TRR (nS) : 35
零件包装代码 DO-213AB DO-213AB DO-213AB DO-213AB DO-213AB
制造商包装代码 DO-213AB DO-213AB DO-213AB DO-213AB DO-213AB
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