首页 > 器件类别 > 半导体 > 分立半导体

EGL34M

0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA

器件类别:半导体    分立半导体   

厂商名称:MCC

厂商官网:http://www.mccsemi.com

下载文档
文档预览
MCC
Features
l
l
l
l
l
  omponents
21201 Itasca Street Chatsworth

  !"#
$ %    !"#
EGL34A
THRU
EGL34M
0.5 Amp Super Fast
Recovery Rectifier
50 to 1000 Volts
MINIMELF
High Current Capability
Extremely Low Thermal Resistance
For Surface Mount Application
Higher Temp Soldering: 250 C for 10 Seconds At Terminals
Minimelf Package
o
Maximum Ratings
l
l
l
Operating Temperature: -55 C to +150 C
Storage Temperature: -55 C to +150 C
Maximum Thermal Resistance: 5 C/W Junction to Lead
o
o
o
o
o
MCC
Catalog
Number
EGL34A
EGL34B
EGL34D
EGL34G
EGL34J
EGL34K
EGL34M
Device
Marking
----
----
----
----
----
----
----
Maximum
Recurrent
Peak
Reverse
Voltage
50V
100V
200V
400V
600V
800V
1000V
Maximum
Maximum
DC Blocking
RMS
Voltage
Voltage
35V
70V
140V
280V
420V
560V
700V
50V
100V
200V
400V
600V
800V
1000V
DIM
A
B
C
MIN
.134
.008
.055
Cathode Mark
C
B
A
DIMENSION
INCHES
MAX
.142
.016
.059
MIN
3.40
0.20
1.40
MM
MAX
3.60
0.40
1.50
NOTE
Electrical Characteristics @ 25
o
C Unless Otherwise Specified
Average Forward Current
Peak Forward Surge
Current
Maximum Instantaneous
Forward Voltage
EGL34A-D
EGL34G
EGL34J-M
Maximum DC Reverse
Current At Rated DC
Blocking Voltage
Typical Junction
Capacitance
I
F(AV)
I
FSM
0.5A
10.0A
T
J
=75 C
8.3ms half sine
o
V
F
1.25
1.35
1.50
5.0uA
50uA
SUGGESTED SOLDER
PAD LAYOUT
I
FM
=0.5A
T
A
=25 C
T
J
=25 C
o
0.075”
0.105
o
I
R
C
J
T
J
=125
o
C
Measured at
7.0pF 1.0MHz,
V
R
=4.0V
0.030”
Maximum Reverse
Recovery Time
EGL34A-G
EGL34J-M
T
rr
50ns
75ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
www.mccsemi.com
EGL34A thru EGL34G
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1 - FORWARD CURRENT
DERATING CURVE
MCC
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
0.5
PEAK FORWARD SURGE CURRENT,
AMPERES
RESISTIVE OR
INDUCTIVE LOAD
12
10
8.0
6.0
4.0
2.0
0
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0.4
0.3
0.2
0.1
0
0
25
50
75
100
125
150
175
1
10
NUMBER OF CYCLES AT 60 H
Z
100
TERMINAL TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
50
PULSE WIDTH=300µs
1% DUTY CYCLE
100
INSTANTANEOUS FORWARD CURRENT,
AMPERES
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
10
10
T
J
=150°C
T
J
=150°C
1
T
J
=25°C
1
T
J
=125°C
0.1
T
J
=75°C
0.1
EGL34A - EGL34D
EGL34F & EGL34G
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0.001
0
T
J
=25°C
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL
IMPEDANCE
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
35
JUNCTION CAPACITANCE, pF
30
25
20
15
10
5
0
0.1
TRANSIENT THERMAL IMPEDANCE,
°C/W
T
J
=25°C
f=1.0 MH
Z
Vsig=50mVp-p
100
10
1
1
10
100
0.1
0.01
0.1
t, PULSE DURATION, sec.
1
10
100
REVERSE VOLTAGE, VOLTS
www.mccsemi.com
查看更多>
参数对比
与EGL34M相近的元器件有:EGL34A、EGL34B、EGL34D、EGL34G、EGL34J、EGL34K。描述及对比如下:
型号 EGL34M EGL34A EGL34B EGL34D EGL34G EGL34J EGL34K
描述 0.5 A, 1000 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 50 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 100 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 200 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 400 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 600 V, SILICON, SIGNAL DIODE, DO-213AA 0.5 A, 800 V, SILICON, SIGNAL DIODE, DO-213AA
热门器件
热门资源推荐
器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
需要登录后才可以下载。
登录取消