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EGP50D

5 A, 200 V, SILICON, RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:GE Sensing ( Amphenol Advanced Sensors )

厂商官网:http://www.vishay.com/

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EGP50A THRU EGP50G
GLASS PASSIVATED FAST EFFICIENT RECTIFIER
Reverse Voltage -
50 to 400 Volts
Forward Current -
5.0 Amperes
FEATURES
Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
Glass passivated cavity-free junction
Superfast recovery time for high efficiency
Low forward voltage, high
current capability
Low leakage current
High surge current capability
High temperature metallurgically bonded construction
High temperature soldering guaranteed:
300°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
E
D
*
Case Style GP20
P
A
T
E
N
T
1.0 (25.4)
MIN.
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
®
1.0 (25.4)
MIN.
0.042 (1.07)
0.037 (0.94)
DIA.
MECHANICAL DATA
Case:
Molded plastic over solid glass body
Terminals:
Axial leads, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.03 ounce, 0.8 gram
Dimensions in inches and (millimeters)
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306
*
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
EGP
50A
EGP
50B
EGP
50C
EGP
50D
EGP
50F
EGP
50G
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
L
=55°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load
Maximum instantaneous forward voltage at 5.0A
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
(NOTE 1)
Typical thermal resistance
(NOTE 2)
Typical junction capacitance
(NOTE 3)
Operating junction and storage temperature range
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
5.0
200
140
200
300
210
300
400
280
400
Volts
Volts
Volts
Amps
I
FSM
V
F
I
R
trr
R
ΘJA
R
ΘJL
C
J
T
J,
T
STG
95
0.95
150.0
1.25
5.0
50.0
50.0
20.0
5.0
75
-65 to +150
Amps
Volts
µA
ns
°C\W
pF
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, Irr=0.25A
(2) Thermal resistance from junction to ambient and from junction of lead at 0.375” (9.5mm) lead length,
both leads measured attached to heat sinks
(3) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
4/98
RATINGS AND CHARACTERISTIC CURVES EGP50A THRU EGP50G
FIG. 1 - MAXIMUM FORWARD CURRENT
DERATING CURVE
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
6.0
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
RESISTIVE OR
INDUCTIVE LOAD
175
PEAK FORWARD SURGE CURRENT,
AMPERES
5.0
4.0
COPPER HEATSINKS
150
125
100
75
50
25
0
T
J
=T
J
max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
3.0
2.0
L
T
L
1.0
0
0
0.375" (9.5mm)
25
50
75
100
125
150
175
LEAD TEMPERATURE, °C
1
10
NUMBER OF CYCLES AT 60 H
Z
FIG. 4 - TYPICAL REVERSE LEAKAGE
CHARACTERISTICS
100
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
50
PULSE WIDTH=300µs
1% DUTY CYCLE
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
T
J
=150°C
10
T
J
=125°C
INSTANTANEOUS FORWARD CURRENT,
AMPERES
10
T
J
=150°C
1
1
T
J
=25°C
T
J
=75°C
0.1
0.1
0.01
T
J
=25°C
EGP50A - EGP50D
EGP50F & EGP50G
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
°CW
210
JUNCTION CAPACITANCE, pF
180
150
120
90
60
30
0
0.1
EGP50A-EGP50D
EGP50F & EGP50G
T
J
=25°C
f=1.0 MH
Z
Vsig=50mVp-p
100
10
1
1.0
0.1
0.01
0.1
1
10
100
1
10
100
1,000
t, PULSE DURATION, sec.
REVERSE VOLTAGE, VOLTS
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参数对比
与EGP50D相近的元器件有:EGP50、EGP50B、EGP50F、EGP50A、EGP50C、EGP50G。描述及对比如下:
型号 EGP50D EGP50 EGP50B EGP50F EGP50A EGP50C EGP50G
描述 5 A, 200 V, SILICON, RECTIFIER DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE 5 A, 100 V, SILICON, RECTIFIER DIODE 5 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 5 A, 50 V, SILICON, RECTIFIER DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE 5 A, 400 V, SILICON, RECTIFIER DIODE
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