Product Summary:
BV
DSS
R
DSON (MAX.)
I
D
30V
21mΩ
7.5A
EMB21A03G
Dual N‐Channel Logic Level Enhancement Mode Field Effect Transistor
UIS, Rg 100% Tested
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
Continuous Drain Current
T
A
= 25 °C
T
A
= 100 °C
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Repetitive Avalanche Energy
2
Power Dissipation
L = 0.1mH, ID=7.5A, RG=25Ω
SYMBOL
V
GS
I
D
LIMITS
±20
7.5
5.5
UNIT
V
A
I
DM
I
AS
E
AS
E
AR
P
D
30
10
2.8
1.4
2
0.8
W
mJ
L = 0.05mH
T
A
= 25 °C
T
A
= 100 °C
Operating Junction & Storage Temperature Range
T
j
, T
stg
‐55 to 150
°C
100% UIS testing in condition of V
D
=15V, L=0.1mH, V
G
=10V, I
L
=7.5A, Rated V
DS
=30V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction‐to‐Case
Junction‐to‐Ambient
1
2
3
3
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
25
UNIT
°C / W
62.5
Pulse width limited by maximum junction temperature.
Duty cycle 1％
62.5°C / W when mounted on a 1 in
2
pad of 2 oz copper.
2012/10/25
p.1
PARAMETER
SYMBOL
EMB21A03G
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, Unless Otherwise Noted)
TEST CONDITIONS
LIMITS
MIN TYP
MAX
UNIT
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
On‐State Drain Current
1
Drain‐Source On‐State Resistance
1
I
D(ON)
R
DS(ON)
V
DS
= 10V, V
GS
= 10V
V
GS
= 10V, I
D
= 7.5A
V
GS
= 4.5V, I
D
= 5.5A
Forward Transconductance
1
g
fs
V
DS
= 5V, I
D
= 7.5A
30
1
7.5
1.5
18
34
16
3
±100
1
25
21
42
S
A
mΩ
nA
A
V
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
1,2
C
iss
C
oss
C
rss
R
g
Q
g
(V
GS
=10V)
Q
g
(V
GS
=5V)
Gate‐Source Charge
Gate‐Drain Charge
1,2
Turn‐On Delay Time
1,2
Rise Time
1,2
Turn‐Off Delay Time
Fall Time
1,2
1,2
1,2
V
GS
= 0V, V
DS
= 15V, f = 1MHz
520
88
62
2.0
11.5
5
1.6
2.8
9
12
30
15
nS
nC
Ω
pF
V
GS
= 15mV, V
DS
= 0V, f = 1MHz
V
DS
= 15V, V
GS
= 10V,
I
D
= 7.5A
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 15V,
I
D
= 1A, V
GS
= 10V, R
GS
= 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
3
Forward Voltage
1
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
2012/10/25
I
S
I
SM
V
SD
t
rr
I
RM(REC)
Q
rr
I
F
= I
S
, V
GS
= 0V
I
F
= I
S
, dl
F
/dt = 100A / S
50
30
2
2.3
9.2
1.2
V
nS
A
nC
A
p.2
1
2
3
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
EMB21A03G
Ordering & Marking Information:
Device Name: EMB21A03G for SOP‐8
B21
A03
ABCDEFG
Outline Drawing
B21A03: Device Name
ABCDEFG: Date Code
Dimension in mm
Dimension
in.
Typ.
Max.
A
4.70
5.10
J
F
D
E
G
I
I
H
K
B
C
A
B
3.70
4.10
C
5.80
6.20
D
0.33
0.51
E
1.27
F
1.20
1.62
G
0.08
0.28
H
0.40
0.83
I
0.19
0.26
J
0.25
0.50
K
0∘
8∘
2012/10/25
p.3
EMB21A03G
30
V = 10V
GS
On‐Region Characteristics
6V
7V
5V
On‐Resistance Variation with Drain Current and Gate Voltage
2.4
2.2
2.0
25
I ‐ Drain Current(A)
D
20
15
10
5
0
R ‐Normalized
DS(ON)
Drain‐Source On‐Resistance
4.5V
1.8
1.6
V = 4.5 V
GS
1.4
1.2
1.0
0.8
0
6
12
18
I ‐ Drain Current(A)
D
24
30
5.0 V
6.0 V
7.0 V
10 V
0
1
2
3
V ‐ Drain Source Voltage(V)
DS
4
5
1.9
On‐Resistance Variation with Temperature
I = 8A
D
V = 10V
GS
0.09
0.08
On‐Resistance Variation with Gate‐Source Voltage
I = 8 A
D
R ‐ Normalized
DS(on)
Drain‐Source On‐Resistance
R ‐ On‐Resistance(
Ω
)
DS(ON)
1.6
0.07
0.06
0.05
0.04
0.03
0.02
1.3
1.0
0.7
T = 125°C
A
T = 25°C
A
0.4
‐50
0.01
‐25
75
0
25
50
T ‐ Junction Temperature (° C)
J
100
125
150
2
4
6
8
V ‐ Gate‐Source Voltage( V )
GS
10
30
V = 10V
DS
Transfer Characteristics
100
Body Diode Forward Voltage Variation
with Source Current and Temperature
V = 0V
GS
Is ‐ Reverse Drain Current( A )
25
20
15
125° C
10
5
0
1
1.5
2.0
2.5
GS
V ‐ Gate‐Source Voltage( V )
3.0
3.5
T = ‐55° C
A
25° C
10
T = 125° C
A
I ‐ Drain Current(A)
D
1
25° C
0.1
‐55°
C
0.01
0.001
0
0.2
0.6
0.8
1.0
0.4
V ‐ Body Diode Forward Voltage( V )
SD
1.2
1.4
2012/10/25
p.4
r( t ),Normalized Effective
Transient Thermal Resistance
EMB21A03G
10
I = 8A
D
V ‐ Gate‐Source Voltage( V )
GS
8
Gate Charge Characteristics
1000
900
Capacitance Characteristics
f = 1MHz
V = 0 V
GS
10V
V = 5V
DS
15V
800
Capacitance( pF
)
700
600
500
400
300
200
100
Coss
Crss
0
5
25
10
15
20
V ‐ Drain‐Source Voltage( V )
DS
30
Ciss
6
4
2
0
0
4
8
Q ‐ Gate Charge( nC )
g
12
16
0
Maximum Safe Operating Area
100
R Limit
DS(ON)
100
μ
s
10
I ‐ Drain Current( A )
D
10ms
100ms
1ms
Single Pulse Maximum Power Dissipation
50
Single Pulse
R = 125° C/W
θ
JA
T = 25° C
A
P( pk ),Peak Transient Power( W )
40
30
1
DC
0.1
V = 10V
GS
Single Pulse
R = 125° C/W
JA
T = 25°
C
A
1s
10s
20
10
0
0.001
0.01
0.1
1
10
V ‐ Drain‐Source Voltage( V )
DS
100
0.01
0.1
1
10
100
1000
Transient Thermal Response Curve
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
Notes
:
0.02
P
DM
0.01
t1
t2
0.01
Single Pulse
1.Duty Cycle,D =
2.R =125° C/W
θ
JA
t1
t2
3.T ‐ T = P * R (t)
θ
JA
J
A
4.R (t)=r(t) + R
θ
JA
JA
θ
0.001
10
‐4
10
‐3
10
‐2
10
‐1
1
10
100
1000
t ,Time (sec)
1
2012/10/25
p.5
电子工程世界
