Product Summary:
BV
DSS
R
DSON (MAX.)
I
D
‐20V
60mΩ
‐4A
EMF60P02J
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
D
G
S
Pb‐Free Lead Plating & Halogen Free
PARAMETERS/TEST CONDITIONS
Gate‐Source Voltage
Continuous Drain Current
T
A
= 25 °C
T
A
= 70 °C
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
Operating Junction & Storage Temperature Range
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
SYMBOL
V
GS
I
D
LIMITS
±12
‐4
‐2.8
I
DM
P
D
‐16
1.25
0.8
T
j
, T
stg
‐55 to 150
°C
W
A
UNIT
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction‐to‐Ambient
3
Junction‐to‐Lead
4
1
2
3
4
SYMBOL
R
JA
R
JL
TYPICAL
MAXIMUM
100
55
UNIT
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle 1％
100°C / W when mounted on a 1 in
2
pad of 2 oz copper.
R
JA
is the sum of the thermal impedance from junction to lead R
JL
and lead to ambient.
2014/1/7
p.1
EMF60P02J
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
MIN TYP
MAX
UNIT
STATIC
Drain‐Source Breakdown Voltage
Gate Threshold Voltage
Gate‐Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= ‐250A
V
DS
= V
GS
, I
D
= ‐250A
V
DS
= 0V, V
GS
= ±12V
V
DS
= ‐16V, V
GS
= 0V
V
DS
= ‐16V, V
GS
= 0V, T
J
= 125 °C
On‐State Drain Current
1
Drain‐Source On‐State Resistance
1
I
D(ON)
R
DS(ON)
V
DS
= ‐5V, V
GS
= ‐4.5V
V
GS
= ‐4.5V, I
D
= ‐3.5A
V
GS
= ‐2.5V, I
D
= ‐2.5A
V
GS
= ‐1.8V, I
D
= ‐1.0A
Forward Transconductance
1
g
fs
V
DS
= ‐5V, I
D
= ‐3.5A
‐20
‐1.2
±100
‐1
‐10
60
96
250
S
A
mΩ
nA
A
V
‐0.3 ‐0.75
‐4
50
75
150
10
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
1,2
Gate‐Source Charge
1,2
Gate‐Drain Charge
Turn‐On Delay Time
1,2
Rise Time
1,2
Turn‐Off Delay Time
1,2
Fall Time
1,2
1,2
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0V, V
DS
= ‐10V, f = 1MHz
382
70
60
7.2
1.2
2.3
17
32
37
32
nS
nC
pF
V
DS
= ‐10V, V
GS
= ‐4.5V,
I
D
= ‐3.5A
V
DS
= ‐10V,
I
D
= ‐1A, V
GS
= ‐4.5V, R
GS
= 6Ω
SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25 °C)
Continuous Current
Pulsed Current
Forward Voltage
1
1
2
3
3
I
S
I
SM
V
SD
I
F
= I
S
, V
GS
= 0V
‐3
‐12
‐1.2
A
V
Pulse test : Pulse Width 300 sec, Duty Cycle 2％.
Independent of operating temperature.
Pulse width limited by maximum junction temperature.
p.2
2014/1/7
TYPICAL CHARACTERISTICS
EMF60P02J
16
Typical output characteristics
V = ‐4.5 V
GS
‐4.0V
‐3.5V
0.14
0.12
R ‐ On‐Resistance(
Ω
)
DS(ON)
On‐Resistance Variation with Gate‐Source Voltage
I = ‐ 2A
D
12
‐I ‐ Drain Current( A )
D
0.10
0.08
0.06
T = 125°C
A
0.04
0.02
T = 25°C
A
8
‐3.0V
4
‐2.5V
‐1.8V
0
0
1
2
3
‐V ‐ Drain‐Source Voltage( V )
DS
4
5
0
0
2
6
4
‐ V ‐ Gate‐Source Voltage( V )
GS
8
10
1.8
1.6
R ‐ Normalized
DS(on)
Drain‐Source On‐Resistance
1.4
1.2
1.0
0.8
0.6
‐50
Normalized on‐Resistance v.s. Junction Temperature
I = ‐3.5A
D
V = ‐4.5V
GS
Gate Charge Characteristics
5
I = ‐ 3.5A
D
‐ V ‐ Gate‐Source Voltage( V )
GS
4
3
V = ‐ 10V
DS
2
1
0
‐25
75 100
50
0
25
T ‐ Junction Temperature (°C)
J
125
150
0
2
4
6
Q ‐ Gate Charge( nC )
g
8
10
600
500
400
Capacitance Characteristics
Body Diode Forward Voltage Variation
with Source Current and Temperature
10
‐Is ‐ Reverse Drain Current( A )
V = 0V
GS
1
T = 125°C
A
Capacitance( pF
)
Ciss
300
200
100
0
0
10
5
15
‐ V , Drain‐Source Voltage( V )
DS
20
0.1
0.01
25°C
‐55°C
Coss
Crss
0.001
0.0001
0
0.2
0.4
0.6
0.8
1.0
1.2
‐V ‐ Body Diode Forward Voltage( V )
SD
2014/1/7
p.3
‐V ‐Gate Threshold V oltage(V)
GS(th)
1.5
EMF60P02J
Gate Threshold Voltage v.s. Junction Temperature
Single Pulse Maximum Power Dissipation
20
P(pk),Peak Transient Power( W )
1.25
Single Pulse
R = 100°C/W
θ
JA
A
T = 25°C
15
1.0
0.75
10
0.50
5
0.25
0
‐50
0
50
100
150
T ‐ Junction Temperature (°C)
J
0
0.001
0.01
0.1
1
10
100
1000
t ,Time ( SEC )
1
100
Maximum Safe Operating Area
100
μ
s
10
R
DS(ON)
LIMIT
1ms
10ms
1
DC
0.1
V
GS
=‐4.5V
SINGLE PULSE
R
θ
JA
=100°C/W
TA=25°C
100ms
1s
‐I
D
,Drain Current( A )
0.01
0.1
1
10
100
‐V
GS
,Drain‐Source Voltage( V )
Transient Thermal Response Curve
1
r(t),Normalized Effective
Transient Thermal Resistance
Duty Cycle = 0.5
0.2
Notes
:
0.1
0.1
0.05
0.02
0.01
Single Pulse
P
DM
t1
t2
1.Duty Cycle,D =
2.R =100°C/W
θ
JA
t1
t2
3.T ‐ T = P * R (t)
θ
JA
A
J
4.R (t)=r(t) + R
θ
JA
θ
JA
0.01
10
‐4
10
‐3
10
‐2
10
t1 ,Time ( SEC )
‐1
1
10
100
1000
2014/1/7
p.4
Ordering & Marking Information:
Device Name: EMF60P02J for SOT‐23
EMF60P02J
25: Device Code, 25 for EMF60P02J
ABC: Date Code
Outline Drawing
Dimension in mm
Dimension
Min.
Typ.
Max.
A
0.7
1.12
A1
0
0.1
A2
b
b
L1
C
A1
E1
E
e
e1
D
A
C
0.1
0.2
D
2.8
2.9
3
E
2.6
2.8
3
E1
1.5
1.6
1.7
e
0.9
0.95
1
F
e1
1.9
F
0.8
1.2
G
G
0.3
0.6
L1
0.55
0.65
0.35
0.5
Footprint
2014/1/7
p.5
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