JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-563 Plastic-Encapsulate Transistors
EMZ8
Power management (dual transistors)
SOT-563
FEATURES
Both a 2SA2018 chip and 2SC2412K chip in a package
External circuit
1
MARKING:Z8
Absolute maximum ratings(Ta=25℃)
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
stg
Para
meter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
Tr1
-15
-12
-6
-150
150
-55-+150
Tr2
60
50
7
150
Units
V
V
V
mA
mW
℃
℃
150(TOTAL)
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Tr1
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CEsat
Test
conditions
Min
-15
-12
-6
-0.1
-0.1
270
680
-0.25
260
6.5
Min
60
50
7
0.1
0.1
120
180
2.0
3.5
560
0.4
V
MHz
pF
Typ
Max
V
MHz
pF
Unit
V
V
V
μA
μA
Typ
Max
Unit
V
V
V
μA
μA
I
C
= -10μA, I
E
=0
I
C
= -1mA , I
B
=0
I
E
= -10μA, I
C
=0
V
CB
=-15V, I
E
=0
V
EB
= -6V, I
C
=0
V
CE
=-2V, I
C
= -10mA
I
C
= -200mA, I
B
= -10mA
V
CE
=-2V, I
C
= -10mA,
f=100MHz
V
CB
=-10V, I
E
=0,f=1MHz
Test
conditions
f
T
C
ob
Tr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
C
ob
I
C
=50μA,I
E
=0
I
C
=1mA,I
B
=0
I
E
=50μA,I
C
=0
V
CB
=60V,I
E
=0
V
EB
=7V,I
C
=0
V
CE
=6V,I
C
=1mA
I
C
=50mA,I
B
=5mA
V
CE
=12V,I
C
=2mA,f=100MHz
V
CB
=12V,I
E
=0,f=1MHz
A,Jun,2011
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