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ER306

3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD

器件类别:半导体    分立半导体   

厂商名称:MCC

厂商官网:http://www.mccsemi.com

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MCC
Features
  omponents
21201 Itasca Street Chatsworth

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ER300
THRU
ER306
3 Amp
Super Fast
Recovery Rectifier
50 to 600 Volts
DO-201AD
Superfast recovery times-epitaxial construction
Low forward voltage, high current capability
Hermetically sealed
Low leakage , High surge capability
Maximum Ratings
Operating Junction Temperature: -55°C to +150°C
Storage Temperature: -55°C to +150°C
Typical Thermal Resistance 20°C/W Junction to ambient
MCC
Device
Maximum
Maximum Maximum
Catalog
Marking
Recurrent
RMS
DC
Number
Peak Reverse
Voltage
Blocking
Voltage
Voltage
ER300
ER300
50V
35V
50V
ER301
ER301
100V
70V
100V
ER301A
ER301A
150V
105V
150V
ER302
ER302
200V
140V
200V
ER303
ER303
300V
210V
300V
ER304
ER304
400V
280V
400V
ER306
ER306
600V
420V
600V
Average Forward
Current
Peak Forward Surge
Current
Maximum
Instantaneous
Forward Voltage
ER300-302
ER303-304
ER306
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Maximum Reverse
Recovery Time
I
F(AV)
I
FSM
3A
125A
T
A
= 55°C
8.3ms, half sine
D
A
Cathode
Mark
B
Electrical Characteristics @ 25°C Unless Otherwise Specified
D
C
V
F
0.95V
1.25V
1.70V
5µA
300µA
I
FM
= 3.0A;
T
A
= 25°C
DIMENSIONS
I
R
T
A
= 25°C
T
A
= 125°C
DIM
A
B
C
D
INCHES
MIN
---
---
.048
1.000
MAX
.370
.250
.052
---
MM
MIN
---
---
1.20
25.40
MAX
9.50
6.40
1.30
---
NOTE
T
rr
Typical Junction
Capacitance
35ns
I
F
=0.5A, I
R
=1.0A,
I
rr
=0.25A
Measured at
1.0MHz, V
R
=4.0V
*Pulse Test: Pulse Width 300µsec, Duty Cycle 2%
C
J
35pF
www.mccsemi.com
ER300 thru ER306
RATING AND CHARACTERISTIC CURVES
MCC
AVERAGE FORWARD CURRENT
(10)-AMP (10)-AAV
t
rr
+0.5A
0
-0.25
4.0
3.0
.375" 9.5mm LENGTH
2.0
NOTE:1.Rise Time = 7ns max.
Input Impedance = 1 megohm. 22pF
2.Rise Time = 10ns max.
Source Impedance = 50 Ohms
1.0
-1.0
SET TIME
BASE FOR
50 ns/cm
1cm
0
50
75
100
125
150
175
200
AMBIENT TEMPERATURE,
¢J
Fig. 1-REVERSE RECOVERY TIME CHARACTERISTIC AND
TEST CIRCUIT DIAGRAM
Fig. 2-MAXIMUM AVERAGE FORWARD
CURRENT RATING
100
1,000
ER300 ~ ER302
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD CURRENT,
AMPERES
100
T
J
= 100
¢J
ER303 ~ ER304
10
1
T
J
= 75
¢J
1
ER306
1.0
T
J
= 25
¢J
0.
0.1
TJ = 25
¢J
PULSE WIDTH = 300uS
2% DUTY CYCLE
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK INVERSE VOLTAGE, VOLTS
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig. 3-TYPICAL REVERSE CHARACTERISTICS
PEAK FORWARD SURGE CURRENT,
AMPERES
Fig. 4-FORWARD CURRENT DERATING CURVE
100
JUNCTION CAPACITANCE, pF
200
¡y
125
75
8.3ms SINGLE HALF SINE
WAVE JEDEC METHOD
35
1
5
10
50
100
TJ = 25
¢J
f = 1.0MHz
Vsig = 50mVp-p
10
5
1
10
REVERSE VOLTAGE, VOLTS
100
NUMBER OF CYCLES AT 60Hz
Fig. 5-MAXIMUM NON-REPETITIVE SURGE CURRENT
Fig. 6-TYPICAL JUNCTION CAPACITANCE
www.mccsemi.com
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参数对比
与ER306相近的元器件有:ER300、ER301、ER301A、ER302、ER303、ER304。描述及对比如下:
型号 ER306 ER300 ER301 ER301A ER302 ER303 ER304
描述 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 150 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD
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