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ERB44-02

1 A, 200 V, SILICON, SIGNAL DIODE

器件类别:半导体    分立半导体   

厂商名称:TAYCHIPST

厂商官网:http://www.taychipst.com

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ERB44-02 THRU ERB44-10
FAST RECOVERY RECT IFIER
200V-1000V 1.0A
FEATURES
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Freon,Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
MECHANICAL DATA
Cas e:JEDEC DO-41,m olded plas tic
Term inals : Axial lead ,s olderable per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.012 ounces ,0.34 gram s
Mounting pos ition: Any
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERB44
-02
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
ERB44
-04
400
280
400
ERB44
-06
600
420
600
1.0
ERB44
-08
800
560
800
ERB44
-10
1000
700
1000
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
200
140
200
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
30.0
A
Maximum instantaneous forw ard voltage
@ 1.0 A
Maximum reverse current
at rated DC blocking voltage
@T
A
=25
@T
A
=100
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
1.1
5.0
100.0
400
12
55
- 55---- +150
- 55---- + 150
V
μA
ns
pF
/W
Maximum reverse recovery time (Note1)
Typical junction capacitance
Typical thermal resistance
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE:1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com
ERB44-02 THRU ERB44-10
FAST RECOVERY RECT IFIER
200V-1000V 1.0A
ERB44-02 THRU ERB44-10
RATINGS AND CHARACTERISTIC CURVES
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
t
rr
50
N.1.
10
N.1.
+0.5A
D.U.T.
(+)
50VDC
(APPROX)
(-)
1
N.1.
( - )
0
PULSE
GENERATOR
(NOTE2)
OSCILLOSCOPE
(NOTE 1)
( + )
-0.25A
-1.0A
N T S:1.R T E=7ns M IN U IM E AN E
OE
ISE IM
AX. P T P D C =1M .22pF
2.R TIM =10ns M SO R EIM E AN E
ISE E
AX. U C P D C =5O
SE T EBASEF R50/100 ns /cm
T IM
O
1cm
FIG.2 --TYPICAL FORWARD CHARACTERISTIC
FIG.3 -- FORWARD DERATING CURVE
100
10
T
J
=25
Pulse Width=300
µ
S
AVERAGE FORWARD RECTIFIED CURRENT
AMPERES
INSTANTANEOUS FORWARD CURRENT
AMPERES
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
4
2
1.0
0.4
0.2
0.1
0.06
0.04
0.02
0.01
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
S in gle P ha se
H a lf W ave 6 0H z
R e sistive or
Inductive Load
0
20
40
60
80
100
120
140 150
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
AMBIENT T
EMPERAT
URE,
FIG.4--TYPICAL JUNCTION CAPACITANCE
FIG.5--PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT
AMPERES
JUNCTION CAPACITANCE,pF
10
16
14
12
10
40
30
T
J
=125
8.3ms Single Half
Sine-Wave
20
4
2
1
.1
T
J
=25
f=1MHz
10
0
1
2
4
8 10
20
40
60 80 100
.2
.4
1.0
2
4
10
20
40
100
REVERSE VOLTAGE,VOLTS
NUMBER OF C
YCLES AT 60 Hz
E-mail: sales@taychipst.com
2 of 2
Web Site: www.taychipst.com
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参数对比
与ERB44-02相近的元器件有:ERB44-04、ERB44-06、ERB44-08、ERB44-10。描述及对比如下:
型号 ERB44-02 ERB44-04 ERB44-06 ERB44-08 ERB44-10
描述 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 400 V, SILICON, SIGNAL DIODE 1 A, 600 V, SILICON, SIGNAL DIODE 1 A, 800 V, SILICON, SIGNAL DIODE 1 A, 1000 V, SILICON, SIGNAL DIODE
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器件捷径:
A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ
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