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ES1B

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
1 A, 100 V, 硅, 信号二极管, DO-214交流

器件类别:半导体    分立半导体   

厂商名称:SHUNYE

厂商官网:http://www.shunyegroup.com.cn/

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器件:ES1B

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器件参数
参数名称
属性值
端子数量
2
元件数量
1
加工封装描述
绿色, 塑料, SMA, 2 PIN
状态
ACTIVE
包装形状
矩形的
包装尺寸
SMALL OUTLINE
表面贴装
Yes
端子形式
C BEND
端子涂层
PURE 锡
端子位置
包装材料
塑料/环氧树脂
结构
单一的
二极管元件材料
二极管类型
信号二极管
反向恢复时间最大
0.0350 us
最大重复峰值反向电压
100 V
最大平均正向电流
1 A
文档预览
ES1A THRU ES1J
SURFACE MOUNT SUPER FAST RECTIFIER
Reverse Voltage -
50 to 600 Volts
DO-214AC
Forward Current -
1.0 Ampere
FEATURES
0.087 (2.21)
0.070 (1.80)
0.110(2.80)
0.100(2.54)
0.177(4.50)
0.157(3.99)
0.012(0.305)
0.006(0.152)
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Super fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
A
MECHANICAL DATA
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
0.222(5.66)
0.194(4.93)
SMA
SMA(H)
A:
0.096(2.42)
0.078(1.98)
0.122(3.12)
0.110(2.82)
Case:
JEDEC DO-214AC molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:0.003
ounce, 0.093 grams
0.004 ounce, 0.111 grams SMA(H)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
ES1A ES1B
ES1C
ES1D ES1E
ES1G
ES1J
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
1.0
300
210
300
400
280
400
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
q
JA
T
J
,
T
STG
0.95
30.0
1.25
5.0
50.0
35
15.0
60.0
-65 to +150
Amps
Volts
u
A
ns
pF
C/W
C
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
www.shunyegroup.com.cn
RATINGS AND CHARACTERISTIC CURVES ES1A THRU ES1J
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
FIG. 1- FORWARD CURRENT DERATING CURVE
£PEAK FORWARD SURGE CURRENT,
AMPERES
1.0
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
0.8
25
0.6
20
0.4
Single Phase
Half Wave 60Hz
Resistive or
inductive Load
15
0.2
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
1,000
T
J
=25 C
PULSE WIDTH=300
ms
1%DUTY CYCLE
10
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
INSTANTANEOUS FORWARD
CURRENT,AMPERES
100
1
10
TJ=100 C
1
0.1
ES1A-ES1D
ES1E-ES1J
0.01
0
0.4
0.8
1.2
1.6
1.8
0.1
TJ=25 C
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLEAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
200
100
T
J
=25 C
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
TRANSIENT THERMAL IMPEDANCE,
C/W
100
JUNCTION CAPACITANCE, pF
10
10
1
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t.,PULSE DURATION,sec.
www.shunyegroup.com.cn
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参数对比
与ES1B相近的元器件有:ES1A、ES1C、ES1D、ES1E、ES1G、ES1J。描述及对比如下:
型号 ES1B ES1A ES1C ES1D ES1E ES1G ES1J
描述 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC
端子数量 2 2 2 2 - 2 2
元件数量 1 1 1 1 - 1 1
加工封装描述 绿色, 塑料, SMA, 2 PIN 塑料, SMA, 2 PIN SMA, 2 PIN 塑料, SMA, 2 PIN - 塑料, HSMA, 2 PIN SMA, 2 PIN
状态 ACTIVE ACTIVE ACTIVE ACTIVE - DISCONTINUED TRANSFERRED
包装形状 矩形的 矩形的 RECTANGULAR 矩形的 - 矩形的 矩形的
包装尺寸 SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
表面贴装 Yes Yes Yes Yes - Yes Yes
端子形式 C BEND C BEND C BEND C BEND - C BEND C BEND
端子涂层 PURE 锡 - MATTE TIN PURE 锡 - 锡 铅 NOT SPECIFIED
端子位置 DUAL -
包装材料 塑料/环氧树脂 塑料/环氧树脂 PLASTIC/EPOXY 塑料/环氧树脂 - 塑料/环氧树脂 塑料/环氧树脂
结构 单一的 单一的 SINGLE 单一的 - 单一的 单一的
二极管元件材料 SILICON -
二极管类型 信号二极管 信号二极管 SIGNAL DIODE 信号二极管 - 信号二极管 信号二极管
反向恢复时间最大 0.0350 us 0.0200 us 0.0150 us 0.0200 us - 0.0600 us 0.0600 us
最大重复峰值反向电压 100 V 50 V 150 V 200 V - 400 V 600 V
最大平均正向电流 1 A 1 A 1 A 1 A - 1 A 1 A
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