首页 > 器件类别 > 分立半导体 > 超快恢复二极管

ES1HJ

超快恢复二极管, 1A, 500V, 30A, 1.7V, 1A, 5μA, 35nS

器件类别:分立半导体    超快恢复二极管   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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器件参数
参数名称
属性值
封装类型
Case Style
SMAJ
IF(A)
1
VRRM (V)
500
IFSM (A)
30
VF (V)
1.7
@ IF (A)
1
Maximum reverse current
5
TRR(nS)
35
class
Diodes
文档预览
Surface Mount Rectifiers
ES1AJ-ES1JJ
Features
Low cost
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with Alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
VOLTAGE RANGE: 50 ---
600
V
CURRENT: 1.0 A
SMAJ
4.3± 0.1
1.95± 0.25
Marking Information
Dimensions in millimeters
XXXX
LGE:Lu Guang Electronic
XXXX:marking code (ES1A-ES1J)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
 
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
0.203MAX
Case:JEDEC SMAJ,molded plastic
Terminals:
Solderable
per
MIL- STD-202,Method 208
Polarity: Color band denotes cathode
Weight: 0.003 ounces,0.084 grams
Mounting position: Any
5.6± 0.2
2.35± 0.1
1.3± 0.2
2.6± 0.15
0.2± 0.05
Mechanical Data
ES1A
J
ES1BJ
ES1CJ ES1DJ ES1G
J
ES1HJ ES1JJ
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
A
=75
Peak forward surge current
8.3ms single half-sine-wave
superimposed on rated load
@T
J
=125
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
50
35
50
100
70
100
150
105
150
200
140
200
1.0
400
280
400
500
350
500
600
420
600
I
FSM
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.98
30
1.25
5.0
200
35
19
50
- 55 ---- + 150
- 55 ---- + 150
1.70
A
V
A
ns
pF
/W
Maximum instantaneous forward voltage at1.0 A
Maximum reverse current
at rated DC blocking voltage
Typical reverse recovery time
Typical junction capacitance
Typical thermal resistance
@T
A
=25
@T
A
=125
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied reverse voltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient and junction to lead P.C.B.mounted on 0.27''X0.27''(7.0X7.0mm2) copper pad areas
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
Surface Mount Rectifiers
ES1AJ-ES1JJ
Ratings And Characteristic Curves
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
N 1.
10
N 1.
t
rr
+0.5A
0
PULSE
GENERATOR
(NOTE2)
D.U.T.
(+)
25VDC
(approx)
(-)
-0.25A
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE 1)
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE = 1M .22pF.
JJJJJ2.RISE
TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR
10/15
ns/cm
INSTANTANEOUS FORWARD CURRENT
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
AVERAGE FORWARD CURRENT
AMPERES
FIG.3 -- FORWARD DERATING CURVE
z
100
E
S1FJ-E
S1G
J
T
J
=25
Pulse W idth=300
µ
S
1
AMPERES
1.0
ES1A
J
-ES1D
J
0.1
ES1H
J
-ES1J
J
0.5
Single Phase
Half Wave 60H
Z
Resistive or
Inductive Load
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0
0
25
50
75
100
125
150
175
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
AMBIENT TEMPERATURE,
FIG.4 -- TYPICAL JUNCTION CAPACITANCE
PEAK FORWARD SURGE CURRENT
FIG.5 -- PEAK FORWARD SURGE CURRENT
JUNCTION CAPACITANCE,pF
200
100
60
40
20
10
6
4
T
J
=25
30
8.3ms Single Half
Sine-Wave
AMPERES
15
2
1
0.1 0.2
0.4
1
2
4
10
20
40
100
0
1
5
10
50
100
REVERSE VOLTAGE,VOLTS
PACKAGE
SMA
SPQ/PCS
5000/REEL
CARTON
SPQ/PCS
80000
NUMBER OF CYCLES AT 60Hz
CARTON
GW/KG
12.00
CARTON
NW/KG
11.00
CARTON
SIZE/CM
36X30.6X31
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
查看更多>
参数对比
与ES1HJ相近的元器件有:ES1AJ、ES1BJ、ES1CJ、ES1DJ、ES1GJ、ES1JJ。描述及对比如下:
型号 ES1HJ ES1AJ ES1BJ ES1CJ ES1DJ ES1GJ ES1JJ
描述 超快恢复二极管, 1A, 500V, 30A, 1.7V, 1A, 5μA, 35nS 超快恢复二极管, 1A, 50V, 30A, 0.98V, 1A, 5μA, 25nS 超快恢复二极管, 1A, 100V, 30A, 0.98V, 1A, 5μA, 25nS 超快恢复二极管, 1A, 150V, 30A, 0.98V, 1A, 5μA, 25nS 超快恢复二极管, 1A, 200V, 30A, 0.98V, 1A, 5μA, 25nS 超快恢复二极管, 1A, 400V, 30A, 1.25V, 1A, 5μA, 35nS 超快恢复二极管, 1A, 600V, 30A, 1.7V, 1A, 5μA, 35nS
封装类型
Case Style
SMAJ SMAJ SMAJ SMAJ SMAJ SMAJ SMAJ
IF(A) 1 1 1 1 1 1 1
VRRM (V) 500 50 100 150 200 400 600
IFSM (A) 30 30 30 30 30 30 30
VF (V) 1.7 0.98 0.98 0.98 0.98 1.25 1.7
@ IF (A) 1 1 1 1 1 1 1
Maximum reverse current 5 5 5 5 5 5 5
TRR(nS) 35 25 25 25 25 35 35
class Diodes Diodes Diodes Diodes Diodes Diodes Diodes
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