ES1J,ES1J pdf中文资料,ES1J引脚图,ES1J电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

端子数量

元件数量

加工封装描述

SMA, 2 PIN

状态

TRANSFERRED

包装形状

矩形的

包装尺寸

SMALL OUTLINE

表面贴装

Yes

端子形式

C BEND

端子涂层

NOT SPECIFIED

端子位置

双

包装材料

塑料/环氧树脂

结构

单一的

二极管元件材料

硅

二极管类型

信号二极管

反向恢复时间最大

0.0600 us

最大重复峰值反向电压

600 V

最大平均正向电流

1 A

文档预览

CHONGQING PINGYANG ELECTRONICS CO.,LTD.

ES1A THRU ES1J

SUPER FAST RECOVERY RECTIFIER

VOLTAGE：50-400V

CURRENT：1.0A

FEATURES

·High

reliability

·Low

leakage

·Low

forward voltage

·High

current capability

·Super

fast switching speed

·High

surge capability

·Good

for switching mode circuit

SMA(DO-214AC)

.062(1.60)

.055(1.40)

.181(4.60)

.157(4.00)

.012(0.305)

.006(0.152)

.114(2.90)

.098(2.50)

MECHANICAL DATA

·Case:

Molded plastic

·Epoxy:

UL94V-0 rate flame retardant

·Lead:

MIL-STD- 202E, Method 208 guaranteed

·Polarity:Color

band denotes cathode end

·Mounting

position:

Any

·Weight:

0.064 grams

.096(2.44)

.078(2.00)

.060((1.52)

.030(0.76)

.008(0.203)

.002(0.051)

.208(5.28)

.188(4.80)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRONICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%.

SYMBOL

ES1A

ES1B

100

ES1C

150

105

150

1.0

0.95

5.0

ES1D

200

140

200

ES1E

300

210

300

ES1J

400

280

400

units

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward rectified Current

at T

=55°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rate load (JEDEC

method)

Maximum Instantaneous forward Voltage at 1.0A

Maximum DC Reverse Current at Rated DC

Blocking Voltage T

=25°C

RRM

RMS

FSM

1.25

Maximum Full Load Reverse Current Full Cycle

Average,.375”(9.5mm) lead length at T

=75°C

Maximum Reverse Recovery Time (Note 1)

Typical Junction Capacitance (Note 2)

Notes: 1.Test Conditions: I

=0.5A, I

=1.0A, I

=0.25A

2.Measured at 1MHz and applied reverse voltage of 4.0 volts

µA

100

１

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参数对比

与ES1J相近的元器件有：ES1A、ES1B、ES1C、ES1D、ES1E。描述及对比如下：

型号	ES1J	ES1A	ES1B	ES1C	ES1D	ES1E
描述	1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 50 V, SILICON, SIGNAL DIODE	1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC	1 A, 200 V, SILICON, SIGNAL DIODE	1 A, 300 V, SILICON, SIGNAL DIODE, DO-214AC
端子数量	2	2	2	2	2	-
元件数量	1	1	1	1	1	-
加工封装描述	SMA, 2 PIN	塑料, SMA, 2 PIN	绿色, 塑料, SMA, 2 PIN	SMA, 2 PIN	塑料, SMA, 2 PIN	-
状态	TRANSFERRED	ACTIVE	ACTIVE	ACTIVE	ACTIVE	-
包装形状	矩形的	矩形的	矩形的	RECTANGULAR	矩形的	-
包装尺寸	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	-
表面贴装	Yes	Yes	Yes	Yes	Yes	-
端子形式	C BEND	C BEND	C BEND	C BEND	C BEND	-
端子涂层	NOT SPECIFIED	-	PURE 锡	MATTE TIN	PURE 锡	-
端子位置	双	双	双	DUAL	双	-
包装材料	塑料/环氧树脂	塑料/环氧树脂	塑料/环氧树脂	PLASTIC/EPOXY	塑料/环氧树脂	-
结构	单一的	单一的	单一的	SINGLE	单一的	-
二极管元件材料	硅	硅	硅	SILICON	硅	-
二极管类型	信号二极管	信号二极管	信号二极管	SIGNAL DIODE	信号二极管	-
反向恢复时间最大	0.0600 us	0.0200 us	0.0350 us	0.0150 us	0.0200 us	-
最大重复峰值反向电压	600 V	50 V	100 V	150 V	200 V	-
最大平均正向电流	1 A	1 A	1 A	1 A	1 A	-