ESDLW - ESJLW
Taiwan Semiconductor
0.8A, 200V - 600V Surface Mount Super Fast Rectifier
FEATURES
●
●
●
●
●
Glass passivated junction chip
Ideal for automated placement
Low profile package
Low power loss, high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
KEY PARAMETERS
PARAMETER
VALUE
0.8
200 - 600
20
150
SOD-123W
Single die
UNIT
A
V
A
°C
APPLICATIONS
● Switching Mode Power Supplies
● Lighting
● On-board DC/DC converter
Configuration
MECHANICAL DATA
● Case: SOD-123W
● Molding compound meets UL 94V-0 flammability rating
● Part no. with suffix "H" means AEC-Q101 qualified
● Packing code with suffix "G" means green compound
(halogen-free)
●
●
●
●
●
Moisture sensitivity level: level 1, per J-STD-020
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 16mg (approximately)
SOD-123W
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Forward current
Surge peak forward current, 8.3 ms single half
sine-wave superimposed on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
R(RMS)
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
ESDLW
EDLW
200
140
ESGLW
EGLW
400
280
0.8
20
-55 to +150
-55 to +150
ESJLW
EJLW
600
420
V
V
A
A
°C
°C
UNIT
1
Version:A1708
ESDLW - ESJLW
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction-to-lead thermal resistance per diode
Junction-to-ambient thermal resistance per diode
Junction-to-case thermal resistance per diode
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
34
88
35
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
CONDITIONS
I
F
= 0.4A, T
J
= 25°C
ESDLW
I
F
= 0.8A, T
J
= 25°C
I
F
= 0.4A, T
J
= 125°C
I
F
= 0.8A, T
J
= 125°C
I
F
= 0.4A, T
J
= 25°C
Forward voltage per diode
(1)
SYMBOL
TYP
0.80
0.85
0.65
0.72
0.88
0.96
MAX
-
0.95
-
0.8
-
1.3
-
1.05
-
1.7
-
1.3
1
150
-
-
-
35
UNIT
V
V
V
V
V
V
V
V
V
V
V
V
µA
µA
pF
pF
pF
ns
ESGLW
I
F
= 0.8A, T
J
= 25°C
I
F
= 0.4A, T
J
= 125°C
I
F
= 0.8A, T
J
= 125°C
I
F
= 0.4A, T
J
= 25°C
V
F
0.69
0.77
1.03
1.14
0.82
0.94
-
ESJLW
I
F
= 0.8A, T
J
= 25°C
I
F
= 0.4A, T
J
= 125°C
I
F
= 0.8A, T
J
= 125°C
Reverse current @ rated V
R
per diode
(2)
T
J
= 25°C
T
J
= 125°C
I
R
-
21
ESDLW
Junction capacitance
ESGLW
ESJLW
Reverse recovery time
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
I
F
=0.5A , I
R
=1.0A
I
RR
=0.25A
t
rr
1 MHz, V
R
=4.0V
C
J
20
19
-
2
Version:A1708
ESDLW - ESJLW
Taiwan Semiconductor
ORDERING INFORMATION
PART NO.
ESxLW
(Note 1,2)
PART NO.
SUFFIX(*)
H
PACKING
CODE
RV
RQ
PACKING CODE
SUFFIX
G
PACKAGE
SOD-123W
SOD-123W
PACKING
3,000 / 7" Plastic Reel
10,000 / 13" Paper Reel
Notes:
1. "x" defines voltage from 200V (ESDLW) to 600V (ESJLW)
2. Whole series with green compound (halogen-free)
*: Optional available
EXAMPLE P/N
EXAMPLE P/N
ESDLWHRVG
PART NO.
ESDLW
PART NO.
SUFFIX
H
PACKING
CODE
RV
PACKING CODE
SUFFIX
G
DESCRIPTION
AEC-Q101 qualified
Green compound
3
Version:A1708
ESDLW - ESJLW
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.1 Forward Current Derating Curve
1
AVERAGE FORWARD CURRENT (A)
100
Fig.2 Typical Junction Capacitance
ESDLW
0.8
CAPACITANCE (pF)
A
Heat sink
5mm x 5mm
Cu pad test board
1
25
50
75
100
°
0.6
10
0.4
0.2
0
125
150
LEAD TEMPERATURE ( C)
f=1.0MHz
Vsig=50mVp-p
1
10
REVERSE VOLTAGE (V)
100
Fig.3 Typical Reverse Characteristics
1
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
10
10
Fig.4 Typical Forward Characteristics
ESDLW
T
J
=125°C
0.1
ESDLW
UF1DLW
T
J
=125°C
T
J
=125°C
1
0.01
T
J
=25°C
0.01
T
J
=25°C
Pulse width
0.001
0.1
0.4
0.3
0.4
0.6
0.5
0.6
0.8
0.7
1
Pulse width 300μs
1% duty cycle
1
0.8
0.9
1.1
1.2
1.4
1.2
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:A1708
(A)
1
0.1
T
J
=25°C
ESDLW - ESJLW
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig.5 Typical Junction Capacitance
100
INSTANTANEOUS REVERSE CURRENT (μA)
10
Fig.6 Typical Reverse Characteristics
ESGLW
ESGLW
1
T
J
=125°C
CAPACITANCE (pF)
A
10
0.1
0.01
T
J
=25°C
1
1
f=1.0MHz
Vsig=50mVp-p
10
REVERSE VOLTAGE (V)
100
0.001
10
20
30
40
50
60
70
80
90
100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig.7 Typical Forward Characteristics
10
INSTANTANEOUS FORWARD CURRENT (A)
10
ESGLW
UF1DLW
T
J
=125°C
T
J
=125°C
1
0.01
T
J
=25°C
Pulse width
0.001
0.1
0.4
0.3
0.4
0.6
0.5
0.8
0.6
1
0.7
Pulse width 300μs
1% duty cycle
1
0.8
0.9
1.1
1.2
1.4
1.6
1.2
FORWARD VOLTAGE (V)
5
(A)
1
0.1
T
J
=25°C
Version:A1708
stm32/stm8
