TIGER ELECTRONIC CO.,LTD
FFM101 - FFM107
1.0A Surface Mount Fast Recovery Rectifiers
Features
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Tiny plastic SMD package.
High current capability.
Fast switching for high efficiency.
High surge current capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
SMA/DO-214AC
0. 181( 4. 60)
0. 161( 4. 10)
0. 063(1.60)
0. 051(1.30)
0. 108( 2.75)
0.096( 2.45)
0.209( 5. 30)
0. 193(4.90)
0.012(0.30)
0. 006(0.15)
0.096(2.45)
0.078(2.00)
0.059( 1. 50)
0. 035( 0. 90)
0.008(0.20)
0. 002(0.05)
Mechanical data
Case : Molded plastic, SMA
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : Approximated 0.01gram
Dimensions in inches and(millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Maximum ratings
PARAMETER
Forward rectified current
Forward surge current
See Fig.2
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
V
R
= V
RRM
T
A
= 25 C
V
R
= V
RRM
T
A
= 100 C
Junction to ambient
f=1MHz and applied 4V DC reverse voltage
O
O
CONDITIONS
Symbol
I
O
I
FSM
I
R
R
èJA
C
J
T
STG
MIN.
TYP.
MAX.
1.0
30
5.0
100
UNIT
A
A
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
uA
O
42
15
-65
+175
C/W
pF
O
C
SYMBOLS
FFM101
FFM102
FFM103
FFM104
FFM105
FFM106
FFM107
*1
V
RRM
(V)
50
100
200
400
600
800
1000
V
RMS
*2
(V)
35
70
140
280
420
560
700
*3
V
R
(V)
50
100
200
400
600
800
1000
*4
V
F
(V)
*5
T
RR
(nS)
Operating
temperature
T
J
, (
O
C)
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
150
1.30
250
500
-55 to +150
*4 Maximum forward voltage
*5 Reverse recovery time
FFM101 - FFM107
1.0A Surface Mount Fast Recovery Rectifiers
Rating and characteristic curves (FFM101 THRU FFM107)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
3.0
1.0
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
0.1
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLT
AGE,(V)
40
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
30
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
30
25
20
15
10
5
trr
+0.5A
|
|
|
|
|
|
|
|
0
-0.25A
JUNCTION CAPACITANCE,(pF)
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
DSP 与 ARM 处理器
