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FJN4303RBU

Bipolar Transistors - Pre-Biased 50V/100mA/22K 22K

器件类别：半导体    分立半导体   

厂商名称：ON Semiconductor(安森美)

厂商官网：http://www.onsemi.cn

器件标准：

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器件参数
参数名称
属性值
Product Attribute
Attribute Value
制造商
Manufacturer
ON Semiconductor(安森美)
产品种类
Product Category
Bipolar Transistors - Pre-Biased
RoHS
Details
Configuration
Single
Transistor Polarity
PNP
Typical Input Resistor
22 kOhms
Typical Resistor Ratio
1
安装风格
Mounting Style
Through Hole
封装 / 箱体
Package / Case
TO-92-3
DC Collector/Base Gain hfe Min
56
Collector- Emitter Voltage VCEO Max
50 V
Continuous Collector Current
- 0.1 A
Peak DC Collector Current
100 mA
Pd-功率耗散
Pd - Power Dissipation
300 mW
最小工作温度
Minimum Operating Temperature
- 55 C
最大工作温度
Maximum Operating Temperature
+ 150 C
系列
Packaging
Bulk
DC Current Gain hFE Max
56
Emitter- Base Voltage VEBO
- 10 V
高度
Height
5.33 mm
长度
Length
5.2 mm
类型
Type
PNP Epitaxial Silicon Transistor
宽度
Width
4.19 mm
工厂包装数量
Factory Pack Quantity
1000
单位重量
Unit Weight
0.006286 oz
文档预览
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
November 2013
FJN4303R
PNP Epitaxial Silicon Transistor with Bias Resistor
Features
• 100 mA Output Current Capability
• Built-in Bias Resistor (R
1
= 22 kΩ, R
2
= 22 kΩ)
Description
Transistors with built-in resistors can be excellent
space- and cost-saving solutions by reducing compo-
nent count and simplifying circuit design.
Application
• Switching, Interface, and Driver Circuits
• Inverters
• Digital Applications in Industrial Segments
Equivalent Circuit
C
R1
B
R2
1
TO-92
E
1. Emitter 2. Collector 3. Base
Ordering Information
Part Number
FJN4303RTA
Top Mark
R4303
Package
TO-92 3L
Packing Method
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Value
-50
-50
-10
-100
150
-55 to 150
Unit
V
V
V
mA
°C
°C
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
www.fairchildsemi.com
1
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
Thermal Characteristics
(1)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
Power Dissipation
Derate Above T
A
= 25°C
Parameter
Value
300
2.4
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction to Ambient
416
R
θJA
Note:
1. PCB size: FR-4 76 x 114 x 0.6T mm
3
(3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
f
T
C
ob
V
I
(off)
V
I
(on)
R
1
R
1
/R
2
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Input-Off Voltage
Input-On Voltage
Input Resistor
Resistor Ratio
Conditions
I
C
= -10
μA,
I
E
= 0
I
C
= -100
μA,
I
B
= 0
V
CB
= -40 V, I
E
= 0
V
CE
= -5 V, I
C
= -5 mA
I
C
= -10 mA, I
B
= -0.5 mA
V
CE
= -10 V, I
C
= -5 mA
V
CB
= -10 V, I
E
= 0,
f = 1.0 MHz
V
CE
= -5 V, I
C
= -100
μA
V
CE
= -0.3 V, I
C
= -5 mA
Min.
-50
-50
Typ.
Max.
Unit
V
V
μA
V
MHz
pF
-0.1
56
-0.3
200
5.5
-0.5
-3.0
15
0.9
22
1.0
29
1.1
V
V
kΩ
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
www.fairchildsemi.com
2
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
Typical Performance Characteristics
-100
-1000
V
I
(on)[V], INPUT VOLTAGE
V
CE
= - 5V
R
1
= 22K
R
2
= 22K
V
CE
= - 0.3V
R
1
= 22 K
R
2
= 22 K
h
FE
, DC CURRENT GAIN
-100
-10
-10
-1
-10
-100
-1000
-1
-0.1
-1
-10
-100
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Input-On Voltage
350
I
C
[
μ
A], COLLECTOR CURRENT
-1000
P
C
[mW], POWER DISSIPATION
V
CE
= - 5V
R
1
= 22K
R
2
= 22K
300
250
200
-100
150
100
50
-10
-0.0
0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4
0
25
o
50
75
100
125
150
175
V
I
(off)[V], INPUT OFF VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 3. Input-Off Voltage
Figure 4. Power Derating
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
www.fairchildsemi.com
3
FJN4303R — PNP Epitaxial Silicon Transistor with Bias Resistor
Physical Dimensions
TO-92
Figure 5. 3-LEAD, TO-92, MOLDED 0.200 IN-LINE SPACING LD FORM (J61Z OPTION) (ACTIVE)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F.pdf.
© 2002 Fairchild Semiconductor Corporation
FJN4303R Rev. 1.1.2
www.fairchildsemi.com
4
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intended to be an exhaustive list of all such trademarks.
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®
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®
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®
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®
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®
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Saving our world, 1mW/W/kW
at a time™
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Solutions for Your Success¥
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®
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®
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®*
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®
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE
TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to
intended for surgical implant into the body or (b) support or sustain
life, and (c) whose failure to perform when properly used in
cause the failure of the life support device or system, or to affect its
safety or effectiveness.
accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Obsolete
Product Status
Formative / In Design
First Production
Full Production
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I66
© Fairchild Semiconductor Corporation
www.fairchildsemi.com
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参数对比
与FJN4303RBU相近的元器件有：FJN4303RBU_Q、FJN4303RTA。描述及对比如下：
型号 FJN4303RBU FJN4303RBU_Q FJN4303RTA
描述 Bipolar Transistors - Pre-Biased 50V/100mA/22K 22K Bipolar Transistors - Pre-Biased 50V/100mA/22K 22K Bipolar Transistors - Pre-Biased PNP Si Transistor Epitaxial
Product Attribute Attribute Value Attribute Value -
制造商
Manufacturer		 ON Semiconductor(安森美) ON Semiconductor(安森美) -
产品种类
Product Category		 Bipolar Transistors - Pre-Biased Bipolar Transistors - Pre-Biased -
RoHS Details N -
Configuration Single Single -
Transistor Polarity PNP PNP -
Typical Input Resistor 22 kOhms 22 kOhms -
Typical Resistor Ratio 1 1 -
安装风格
Mounting Style		 Through Hole Through Hole -
封装 / 箱体
Package / Case		 TO-92-3 TO-92-3 -
DC Collector/Base Gain hfe Min 56 56 -
Collector- Emitter Voltage VCEO Max 50 V 50 V -
Continuous Collector Current - 0.1 A - 0.1 A -
Peak DC Collector Current 100 mA 100 mA -
Pd-功率耗散
Pd - Power Dissipation		 300 mW 300 mW -
最小工作温度
Minimum Operating Temperature		 - 55 C - 55 C -
最大工作温度
Maximum Operating Temperature		 + 150 C + 150 C -
系列
Packaging		 Bulk Bulk -
DC Current Gain hFE Max 56 56 -
高度
Height		 5.33 mm 5.33 mm -
长度
Length		 5.2 mm 5.2 mm -
宽度
Width		 4.19 mm 4.19 mm -
单位重量
Unit Weight		 0.006286 oz 0.006286 oz -
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器件捷径:
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