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FJPF5021RTU

TRANS NPN 500V 5A TO-220F

器件类别:半导体    分立半导体   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

器件标准:

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器件参数
参数名称
属性值
晶体管类型
NPN
电流 - 集电极(Ic)(最大值)
5A
电压 - 集射极击穿(最大值)
500V
不同 Ib,Ic 时的 Vce 饱和值(最大值)
1V @ 600mA,3A
电流 - 集电极截止(最大值)
10µA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值)
15 @ 600mA,5V
功率 - 最大值
40W
频率 - 跃迁
15MHz
工作温度
150°C(TJ)
安装类型
通孔
封装/外壳
TO-220-3 整包
供应商器件封装
TO-220F
文档预览
Is Now Part of
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Please
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FJPF5021
FJPF5021
High Voltage and High Reliability
• High Speed Switching : t
F
= 0.1µs(Typ.)
• Wide SOA
1
TO-220F
2.Collector
3.Emitter
1.Base
NPN Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Parameter
Value
800
500
7
5
10
2
40
150
- 55 ~ 150
Units
V
V
V
A
A
A
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
BV
EBO
V
CEX
(sus)
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
C
ob
f
T
t
ON
t
STG
t
F
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Sustaining Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 1mA, I
E
= 0
I
C
= 5mA, I
B
= 0
I
E
= 1mA, I
C
= 0
I
C
= 2.5A, I
B1
= -I
B2
= 1A
L = 1mH, Clamped
V
CB
= 500V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 0.6A
V
CE
= 5V, I
C
= 3A
I
C
= 3A, I
B
= 0.6A
I
C
= 3A, I
B
= 0.6A
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 10V, I
C
= 0.6A
V
CC
= 200V
I
C
= 5I
B1
= -2.5I
B2
= 4A
R
L
= 50Ω
80
15
0.5
3
0.1
0.3
15
8
Min.
800
500
7
500
10
10
50
1
1.5
V
V
pF
MHz
µs
µs
µs
Typ.
Max.
Units
V
V
V
V
µA
µA
h
FE
Classification
Classification
h
FE1
R
15 ~ 30
O
20 ~ 40
Y
30 ~ 50
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJPF5021
Typical Characteristics
5
100
I
B
= 800mA
I
B
= 600mA
I
B
= 400mA
V
CE
= 5V
I
C
[A], COLLECTOR CURRENT
4
I
B
= 1.2A
3
I
B
= 200mA
h
FE
, DC CURRENT GAIN
I
B
= 1A
10
2
I
B
= 100mA
I
B
= 50mA
1
I
B
= 20mA
0
0
2
4
6
I
B
= 0
8
10
1
0.01
0.1
1
10
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
10
I
C
= 5 I
B
t
STG
1
V
BE
(sat)
t
ON
, t
STG
, t
F
[
µ
s], TIME
1
t
ON
0.1
t
F
0.1
V
CE
(sat)
0.01
0.01
0.1
1
10
0.01
0.1
1
10
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Switching Time
6
100
V
CE
= 5V
5
I
C
[A], COLLECTOR CURRENT
I
C
[A], COLLECTOR CURRENT
10
I
CP
(max)
I
C
(max)
50
µ
s
s
m
10
s
1m
0
µ
50
4
s
DC
1
3
2
0.1
1
0
0.0
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1
10
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Base-Emitter On Voltage
Figure 6. Forward Bias Safe Operating Area
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
FJPF5021
Typical Characteristics
(Continued)
100
60
I
C
[A], COLLECTOR CURRENT
10
P
C
[W], POWER DISSIPATION
Vcc=50V,
I
B1
=1A, I
B2
= -1A
L = 1mH
50
40
1
30
20
0.1
10
0.01
10
100
1000
10000
0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
C
[ C], CASE TEMPERATURE
Figure 7. Reverse Bias Safe Operating Area
Figure 8. Power Derating
©2003 Fairchild Semiconductor Corporation
Rev. A, May 2003
A
3.40
3.20
B
10.36
9.96
7.00
B
3.28
3.08
2.66
2.42
0.70
SEE NOTE "F"
6.88
6.48
SEE NOTE "F"
1 X 45°
16.00
15.60
B
16.07
15.67
(3.23) B
1
2.14
10.05
9.45
3
1.47
1.24
0.90
0.70
0.50
M
30°
0.45
0.25
2.54
2.54
B
0.60
0.45
A
2.96
2.56
B
4.90
4.50
NOTES:
A. EXCEPT WHERE NOTED CONFORMS TO
EIAJ SC91A.
B DOES NOT COMPLY EIAJ STD. VALUE.
C. ALL DIMENSIONS ARE IN MILLIMETERS.
D. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
E. DIMENSION AND TOLERANCE AS PER ASME
Y14.5-1994.
F. OPTION 1 - WITH SUPPORT PIN HOLE.
OPTION 2 - NO SUPPORT PIN HOLE.
G. DRAWING FILE NAME: TO220M03REV5
查看更多>
参数对比
与FJPF5021RTU相近的元器件有:FJPF5021OTU、FJPF5021YTU、FJPF5021O、FJPF5021R、FJPF5021RTSTU。描述及对比如下:
型号 FJPF5021RTU FJPF5021OTU FJPF5021YTU FJPF5021O FJPF5021R FJPF5021RTSTU
描述 TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F TRANS NPN 500V 5A TO-220F
晶体管类型 NPN - NPN - NPN NPN
电流 - 集电极(Ic)(最大值) 5A - 5A - 5A 5A
电压 - 集射极击穿(最大值) 500V - 500V - 500V 500V
不同 Ib,Ic 时的 Vce 饱和值(最大值) 1V @ 600mA,3A - 1V @ 600mA,3A - 1V @ 600mA,3A 1V @ 600mA,3A
电流 - 集电极截止(最大值) 10µA(ICBO) - 10µA(ICBO) - 10µA(ICBO) 10µA(ICBO)
不同 Ic,Vce 时的 DC 电流增益(hFE)(最小值) 15 @ 600mA,5V - 30 @ 600mA,5V - 15 @ 600mA,5V 15 @ 600mA,5V
功率 - 最大值 40W - 40W - 40W 40W
频率 - 跃迁 15MHz - 15MHz - 15MHz 15MHz
工作温度 150°C(TJ) - 150°C(TJ) - 150°C(TJ) 150°C(TJ)
安装类型 通孔 - 通孔 - 通孔 通孔
封装/外壳 TO-220-3 整包 - TO-220-3 整包 - TO-220-3 整包 TO-220-3 整包
供应商器件封装 TO-220F - TO-220F - TO-220F TO-220F
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