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FMMT38

npn silicon planar medium power darlington transistors

厂商名称:Zetex Semiconductors

厂商官网:http://www.zetex.com/

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SOT23 NPN SILICON PLANAR MEDIUM
POWER DARLINGTON TRANSISTORS
ISSUE 3 – AUGUST 1996
FEATURES
* 60 Volt V
CEO
* Gain of 10K at I
C
=0.5 Amp
PARTMARKING DETAILS –
FMMT38A – 4J
FMMT38B – 5J
FMMT38C – 7J
FMMT38A
FMMT38B
FMMT38C
C
B
E
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
P
tot
T
j
:T
stg
VALUE
80
60
10
800
300
330
-55 to +150
UNIT
V
V
V
mA
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Sustaining Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Turn-on Voltage
Static
Forward
Current
Transfer
Ratio
SYMBOL
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(on)
500
1000
2000
4000
5000
10000
80
60
10
100
100
1.25
1.8
MIN.
MAX.
V
V
V
nA
nA
V
V
UNIT
CONDITIONS.
I
C
=10 A , I
E
=0
I
C
=10mA, I
B
=0
I
E
=10 A , I
C
=0
V
CB
=60V, I
E
=0
V
EB
=8V, I
C
=0
I
C
=800mA, I
B
=8mA*
I
C
=800mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
2%
FMMT38A h
FE
FMMT38B
FMMT38C
3 - 100

*Measured under pulsed conditions. Pulse width=300 s. Duty cycle
Spice parameter data is available upon request for this device



FMMT38A
FMMT38B
FMMT38C
TYPICAL CHARACTERISTICS
I
C
/I
B
=100
V
CE
=5V
1.6
+100°C
1.0
V
CE(sat)
- (Volts)
0.8
-55°C
+25°C
h
FE
- Normalised Gain
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.001
0.01
0.1
1
10
-55°C
+25°C
0.6
+100°C
+175°C
0.4
0.2
0.001
0.01
0.1
1
10
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
CE(sat)
v I
C
h
FE
v I
C
2.0
I
C
/I
B
=100
2.0
V
CE
=5V
V
BE(sat)
- (Volts)
V
BE
- (Volts)
-55°C
1.5
+25°C
1.0
+100°C
+175°C
0.5
0.001
0.01
0.1
1
10
1.5
-55°C
+25°C
1.0
+100°C
+175°C
0.01
0.1
1
10
0.5
0.001
I
C
-
Collector Current (Amps)
I
C
-
Collector Current (Amps)
V
BE(sat)
v I
C
1
V
BE(on)
v I
C
Thermal Resistance (°C/W)
150
IC - Collector Current (A)
D=1 (D.C.)
100m
DC
1s
100ms
10ms
1ms
100us
100
D=0.5
10m
50
D=0.2
D=0.1
D=0.05
Single Pulse
0
0.0001
1m
0.1
1
10
100
100m
1
10
100
0.001
0.01
Pulse Width (seconds)
V
CE
- Collector Emitter Voltage (V)
Maximum transient thermal impedance
Safe Operating Area
3 - 101
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参数对比
与FMMT38相近的元器件有:FMMT38B。描述及对比如下:
型号 FMMT38 FMMT38B
描述 npn silicon planar medium power darlington transistors npn silicon planar medium power darlington transistors
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