JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
FMMT4124
FEATURES
Power dissipation
P
CM
：
0.33W（Tamb=25℃）
Collector current
I
CM
：
0.2A
Collector-base voltage
V
(BR) CBO
：
30V
Operating and storage junction temperature range
T
J
，T
stg
: -55℃ to +150℃
TRANSISTOR（ NPN
）
SOT—23
1. BASE
2. EMITTER
3. COLLECTOR
１．０
２．４
１．３
０．９５
２．９
１．９
０．９５
０．４
Unit : mm
ELECTRICAL CHARACTERISTICS（Tamb=25℃
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
H
FE
V
CE
(sat)
V
BE
(sat)
unless
Test
otherwise
specified）
MIN
30
25
5
0.05
0.05
120
360
0.3
0.95
300
V
V
MHz
TYP
MAX
UNIT
V
V
V
conditions
I
E
=0
Ic=10
μ
A，
Ic= 1mA， I
B
=0
I
E
= 10
μ
A， I
C
=0
V
CB
= 20 V , I
E
=0
V
EB
= 3V ,
I
C
=0
μ
A
μ
A
V
CE
= 1V, I
C
= 2mA
I
C
=50 mA, I
B
= 5mA
I
C
=50 mA, I
B
= 5mA
V
CE
=20V, I
C
= 10mA
f =100MHz
f
T
Marking
FMMT4124： 2C
电子工程世界
