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FOD3180S

OPTOISO 5KV 1CH GATE DRIVER 8SMD

器件类别:半导体    模拟混合信号IC   

厂商名称:ON Semiconductor(安森美)

厂商官网:http://www.onsemi.cn

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器件参数
参数名称
属性值
技术
光学耦合
通道数
1
电压 - 隔离
5000Vrms
共模瞬态抗扰度(最小值)
15kV/µs
传播延迟 tpLH / tpHL(最大值)
200ns,200ns
脉宽失真(最大)
65ns
上升/下降时间(典型值)
75ns,55ns
电流 - 输出高,低
2A,2A
电流 - 峰值输出
2.5A
电压 - 正向(Vf)(典型值)
1.43V
电流 - DC 正向(If)
25mA
电压 - 电源
10 V ~ 20 V
工作温度
-40°C ~ 100°C
安装类型
表面贴装
封装/外壳
8-SMD,鸥翼
供应商器件封装
8-SMD
认可
cUL,UL
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FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
August 2008
FOD3180
2A Output Current, High Speed MOSFET Gate Driver
Optocoupler
Features
Guaranteed operating temperature range of -40°C to
Description
The FOD3180 is a 2A Output Current, High Speed
MOSFET Gate Drive Optocoupler. It consists of a
aluminium gallium arsenide (AlGaAs) light emitting diode
optically coupled to a CMOS detector with PMOS and
NMOS output power transistors integrated circuit power
stage. It is ideally suited for high frequency driving of
power MOSFETs used in Plasma Display Panels
(PDPs), motor control inverter applications and high
performance DC/DC converters.
The device is packaged in an 8-pin dual in-line housing
compatible with 260°C reflow processes for lead free
solder compliance.
+100°C
2A minimum peak output current
High speed response: 200ns max propagation delay
over temperature range
250kHz maximum switching speed
30ns typ pulse width distortion
Wide V
CC
operating range: 10V to 20V
5000Vrms, 1 minute isolation
Under voltage lockout protection (UVLO) with
hysteresis
Minimum creepage distance of 7.0mm
Minimum clearance distance of 7.0mm
C-UL, UL and VDE* approved
R
DS(ON)
of 1.5
(typ.) offers lower power dissipation
15kV/µs minimum common mode rejection
Applications
Plasma Display Panel
High performance DC/DC convertor
High performance switch mode power supply
High performance uninterruptible power supply
Isolated Power MOSFET gate drive
*Requires ‘V’ ordering option
Functional Block Diagram
FOD3180
Package Outlines
NO CONNECTION
1
8
VCC
8
ANODE
2
7
OUTPUT
1
CATHODE
3
6
OUTPUT
NO CONNECTION
4
5
VEE
8
1
8
1
Note:
A 0.1µF bypass capacitor must be connected between pins 5 and 8.
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Absolute Maximum Ratings
(T
A
= 25°C unless otherwise specified)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
T
STG
T
OPR
T
J
T
SOL
I
F(AVG)
I
F(tr, tf)
I
F(TRAN)
V
R
I
OH(PEAK)
I
OL(PEAK)
V
CC
– V
EE
V
O(PEAK)
P
O
P
D
Parameter
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Average Input Current
(1)
LED Current Minimum Rate of Rise/Fall
Peak Transient Input Current (<1µs pulse width, 300pps)
Reverse Input Voltage
“High” Peak Output Current
(2)
“Low” Peak Output Current
(2)
Supply Voltage
Output Voltage
Output Power Dissipation
(4)
Total Power Dissipation
(5)
Value
-40 to +125
-40 to +100
-40 to +125
260 for 10 sec.
25
250
1.0
5
2.5
2.5
-0.5 to 25
0 to V
CC
250
295
Units
°C
°C
°C
°C
mA
ns
A
V
A
A
V
V
mW
mW
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to absolute maximum ratings.
Symbol
V
CC
– V
EE
I
F(ON)
V
F(OFF)
Parameter
Power Supply
Input Current (ON)
Input Voltage (OFF)
Value
10 to 20
10 to 16
-3.0 to 0.8
Units
V
mA
V
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
2
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Electrical-Optical Characteristics (DC)
Over recommended operating conditions unless otherwise specified.
Symbol
I
OH
I
OL
V
OH
V
OL
I
CCH
I
CCL
I
FLH
V
FHL
V
F
V
F
/ T
A
V
UVLO+
V
UVLO–
UVLO
HYST
UVLO Hysteresis
BV
R
C
IN
Input Reverse Breakdown Voltage
Input Capacitance
I
R
= 10µA
f = 1MHz, V
F
= 0V
5
60
Parameter
High Level Output Current
(2)(3)
Low Level Output Current
(2)(3)
High Level Output Voltage
(6)(7)
Low Level Output Voltage
(6)(7)
High Level Supply Current
Low Level Supply Current
Threshold Input Current Low to
High
Input Forward Voltage
Temperature Coefficient of Forward
Voltage
UVLO Threshold
Test Conditions
V
OH
= (V
CC
– V
EE
– 1V)
V
OH
= (V
CC
– V
EE
– 3V)
V
OL
= (V
CC
– V
EE
– 1V)
V
OL
= (V
CC
– V
EE
– 3V)
I
O
= -100mA
I
O
= 100mA
Output Open,
I
F
= 10 to 16mA
Output Open,
V
F
= -3.0 to 0.8V
I
O
= 0mA, V
O
> 5V
Min.
0.5
2.0
0.5
2.0
V
CC
– 0.5
Typ.*
Max.
Unit
A
A
V
V
EE
+ 0.5
4.8
5.0
6.0
6.0
8.0
0.8
1.2
1.43
-1.5
8.3
7.7
0.6
1.8
V
mA
mA
mA
V
V
mV/°C
V
V
V
V
pF
Threshold Input Voltage High to Low I
O
= 0mA, V
O
< 5V
I
F
= 10mA
I
F
= 10mA
V
O
> 5V, I
F
= 10mA
V
O
< 5V, I
F
= 10mA
*Typical values at T
A
= 25°C
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
3
FOD3180 — 2A Output Current, High Speed MOSFET Gate Driver Optocoupler
Switching Characteristics
Over recommended operating conditions unless otherwise specified.
Symbol
t
PLH
t
PHL
P
WD
Parameter
Propagation Delay Time to High Output Level
(8)
Propagation Delay Time to Low Output Level
(8)
Pulse Width Distortion
(9)
Test Conditions Min.
I
F
= 10mA,
R
g
= 10
,
f = 250kHz,
Duty Cycle = 50%,
C
g
= 10nF
C
L
= 10nF,
R
g
= 10Ω
50
50
-90
Typ.* Max.
135
105
200
200
65
90
75
55
2.0
0.3
Unit
ns
ns
ns
ns
ns
ns
µs
µs
kV/µs
Propagation Delay Difference Between Any
P
DD
(t
PHL
– t
PLH
) Two Parts
(10)
t
r
t
f
t
UVLO ON
t
UVLO OFF
| CM
H
|
Rise Time
Fall Time
UVLO Turn On Delay
UVLO Turn Off Delay
Output High Level Common Mode Transient
Immunity
(11) (12)
T
A
= +25°C,
I
f
= 10 to 16mA,
V
CM
= 1.5kV,
V
CC
= 20V
T
A
= +25°C,
V
f
= 0V,
V
CM
= 1.5kV,
V
CC
= 20V
15
| CM
L
|
Output Low Level Common Mode Transient
Immunity
(11) (13)
15
kV/µs
*Typical values at T
A
= 25°C
Isolation Characteristics
Symbol
Parameter
V
ISO
Test Conditions
Min.
5000
Typ.*
Max.
Unit
V
rms
Withstand Isolation Voltage
(14) (15)
T
A
= 25°C,
R.H. < 50%, t = 1min.,
I
I-O
20µA
Resistance (input to output)
(15)
Capacitance (input to output)
V
I-O
= 500V
Freq. = 1MHz
R
I-O
C
I-O
10
11
1
pF
*Typical values at T
A
= 25°C
©2005 Fairchild Semiconductor Corporation
FOD3180 Rev. 1.0.6
www.fairchildsemi.com
4
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参数对比
与FOD3180S相近的元器件有:FOD3180SDV、FOD3180、FOD3180TSV、FOD3180SV、FOD3180T、FOD3180V、FOD3180TV。描述及对比如下:
型号 FOD3180S FOD3180SDV FOD3180 FOD3180TSV FOD3180SV FOD3180T FOD3180V FOD3180TV
描述 OPTOISO 5KV 1CH GATE DRIVER 8SMD MOSFET Output Optocouplers 2A Out Cur Hi Spd IGBT MOSFET OPTO OPTOISO 5KV 1CH GATE DRIVER 8DIP OPTOISO 5KV 1CH GATE DRIVER 8SMD OPTOISO 5KV 1CH GATE DRIVER 8SMD OPTOISO 5KV 1CH GATE DRIVER 8DIP OPTOISO 5KV 1CH GATE DRIVER 8DIP OPTOISO 5KV 1CH GATE DRIVER 8DIP
技术 光学耦合 - - 光学耦合 光学耦合 光学耦合 光学耦合 光学耦合
通道数 1 - - 1 1 1 1 1
电压 - 隔离 5000Vrms - - 5000Vrms 5000Vrms 5000Vrms 5000Vrms 5000Vrms
共模瞬态抗扰度(最小值) 15kV/µs - - 15kV/µs 15kV/µs 15kV/µs 15kV/µs 15kV/µs
传播延迟 tpLH / tpHL(最大值) 200ns,200ns - - 200ns,200ns 200ns,200ns 200ns,200ns 200ns,200ns 200ns,200ns
脉宽失真(最大) 65ns - - 65ns 65ns 65ns 65ns 65ns
上升/下降时间(典型值) 75ns,55ns - - 75ns,55ns 75ns,55ns 75ns,55ns 75ns,55ns 75ns,55ns
电流 - 输出高,低 2A,2A - - 2A,2A 2A,2A 2A,2A 2A,2A 2A,2A
电流 - 峰值输出 2.5A - - 2.5A 2.5A 2.5A 2.5A 2.5A
电压 - 正向(Vf)(典型值) 1.43V - - 1.43V 1.43V 1.43V 1.43V 1.43V
电流 - DC 正向(If) 25mA - - 25mA 25mA 25mA 25mA 25mA
电压 - 电源 10 V ~ 20 V - - 10 V ~ 20 V 10 V ~ 20 V 10 V ~ 20 V 10 V ~ 20 V 10 V ~ 20 V
工作温度 -40°C ~ 100°C - - -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 100°C -40°C ~ 100°C
安装类型 表面贴装 - - 表面贴装 表面贴装 通孔 通孔 通孔
封装/外壳 8-SMD,鸥翼 - - 8-SMD,鸥翼 8-SMD,鸥翼 8-DIP(0.400",10.16mm) 8-DIP(0.300",7.62mm) 8-DIP(0.400",10.16mm)
供应商器件封装 8-SMD - - 8-SMD 8-SMD 8-DIP 8-DIP 8-DIP
认可 cUL,UL - - cUL,UL,VDE cUL,UL,VDE cUL,UL cUL,UL,VDE cUL,UL,VDE
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