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FQB19N20C — N-Channel QFET

MOSFET

November

2013

FQB19N20C

N-Channel

QFET

MOSFET

200

170

mΩ

Description

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to

reduce on-state resistance, and to provide superior

switching performance and high avalanche energy

strength. These devices are suitable for switched mode

power supplies, active power factor correction (PFC),

and electronic lamp ballasts.

Features

•

19.0

200

V, R

DS(on)

170

mΩ (Max.) @ V

= 10 V,

9.5

• Low Gate Charge (Typ.

40.5

nC)

• Low C

rss

(Typ.

pF)

• 100% Avalanche Tested

• RoHS

Compliant

-PAK

Absolute Maximum Ratings

Symbol

DSS

GSS

dv/dt

Drain-Source Voltage

Drain Current

= 25°C unless otherwise noted.

Parameter

- Continuous (T

= 25°C)

- Continuous (T

= 100°C)

Drain Current

Gate-Source voltage

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation

= 25°C)*

= 25°C)

- Derate above 25°C

(Note 2)

(Note 1)

(Note 3)

FQB19N20CTM

200

19.0

12.1

(Note 1)

Unit

V/ns

W/°C

°C

- Pulsed

76.0

433

19.0

13.9

5.5

3.13

139

1.11

-55 to +150

300

STG

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

Thermal Characteristics

Symbol

JC

JA

Parameter

Thermal Resistance, Junction to Case, Max.

Thermal Resistance, Junction to Ambient (Minimum

Pad

of 2-oz

Copper),

Max.

Thermal Resistance, Junction to Ambient (*1 in

Pad

of 2-oz

Copper),

Max.

FQB19N20CTM

0.9

62.5

Unit

C/W

FQB19N20C

Rev. C1

www.fairchildsemi.com

FQB19N20C — N-Channel QFET

MOSFET

Package Marking and Ordering Information

Device Marking

FQB19N20C

Device

FQB19N20CTM

Package

-PAK

Reel Size

330 mm

Tape Width

24 mm

Quantity

800

units

Electrical Characteristics

Symbol

Off Characteristics

DSS

∆BV

DSS

∆T

DSS

GSSF

GSSR

GS(th)

DS(on)

iss

oss

rss

d(on)

d(off)

Notes:

= 25°C unless otherwise noted.

Parameter

Drain-Source Breakdown Voltage

Breakdown Voltage Temperature

Coefficient

Zero Gate Voltage Drain Current

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

Gate Threshold Voltage

Static Drain-Source

On-Resistance

Forward Transconductance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-On Delay Time

Turn-On Rise Time

Turn-Off Delay Time

Turn-Off Fall Time

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Conditions

= 0 V, I

= 250

µA

= 250

µA,

Referenced to 25°C

200

V, V

= 0 V

160

V, T

= 125°C

= 30 V, V

= 0 V

= -30 V, V

= 0 V

= V

, I

= 250

µA

= 10 V, I

9.5

= 40 V, I

9.5

= 25 V, V

= 0 V,

f = 1.0 MHz

Min

200

2.0

Typ

0.24

0.14

10.8

830

195

150

135

115

40.5

6.0

22.5

208

1.63

Max

100

-100

4.0

0.17

1080

255

110

310

280

240

19.0

76.0

1.5

Unit

µA

Ω

µC

On Characteristics

Dynamic Characteristics

Switching Characteristics

100

V, I

19.0

= 25

Ω

(Note 4)

160

V, I

19.0

= 10 V

Drain-Source Diode Characteristics and Maximum Ratings

Maximum Continuous Drain-Source Diode Forward Current

Maximum Pulsed Drain-Source Diode Forward Current

Drain-Source Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge

= 0 V, I

19.0

= 0 V, I

19.0

/dt =100 A/µs

1. Repetitive

rating: pulse-width

limited by maximum junction temperature.

2. L =

1.8

mH, I

19.0

A, V

= 50 V, R

= 25

Ω,

starting

= 25°C.

3. I

≤

19.0

A, di/dt

≤

300

A/µs, V

≤

DSS,

starting

= 25°C.

Essentially

independent

operating temperature.

FQB19N20C

Rev. C1

www.fairchildsemi.com

FQB19N20C — N-Channel QFET

MOSFET

Typical Characteristics

Top :

, Drain Current [A]

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

5.5 V

5.0 V

Bottom : 4.5 V

150 C

25 C

-55 C

※

Notes :

1. 250µ s Pulse Test

2. T

= 25

℃

-1

※

Notes :

1. V

= 40V

2. 250µ s Pulse Test

, Drain-Source Voltage [V]

, Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

0.8

DS(ON)

[Ω ],

Drain-Source On-Resistance

0.6

, Reverse Drain Current [A]

0.4

= 10V

150

℃

0.2

= 20V

※

Note : T

= 25

℃

※

Notes :

1. V

= 0V

2. 250µ s Pulse Test

0.0

-1

0.0

0.4

0.8

1.2

1.6

2.0

2.4

, Drain Current [A]

, Source-Drain voltage [V]

Figure 3. On-Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

3000

2500

iss

= C

+ C

= shorted)

oss

= C

+ C

rss

= C

, Gate-Source Voltage [V]

= 40V

= 100V

= 160V

Capacitance [pF]

2000

iss

1500

oss

rss

※

Notes :

1. V

= 0 V

2. f = 1 MHz

1000

500

※

Note : I

= 19.0A

-1

, Drain-Source Voltage [V]

, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

FQB19N20C

Rev. C1

www.fairchildsemi.com

FQB19N20C — N-Channel QFET

MOSFET

Typical Characteristics

(Continued)

1.2

3.0

DSS

, (Normalized)

Drain-Source Breakdown Voltage

1.1

DS(ON)

, (Normalized)

Drain-Source On-Resistance

2.5

2.0

1.0

1.5

1.0

※

Notes :

1. V

= 10 V

2. I

= 9.5 A

0.9

※

Notes :

1. V

= 0 V

2. I

= 250 µA

0.5

0.8

-100

-50

100

150

200

0.0

-100

-50

100

150

200

, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation

vs Temperature

Figure 8. On-Resistance Variation

vs Temperature

Operation in This Area

is Limited by R

DS(on)

, Drain Current [A]

100

1 ms

10 ms

, Drain Current [A]

※

Notes :

1. T

= 25 C

2. T

= 150 C

3. Single Pulse

-1

100

125

150

, Drain-Source Voltage [V]

, Case Temperature [

℃

]

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current

vs Case Temperature

θJC

(t), Thermal Response [

C/W]

D = 0 .5

0 .2

-1

0 .1

0 .0 5

0 .0 2

0 .0 1

※

N o te s :

1 . Z

J C

( t) = 0 . 9 0

℃

/W M a x .

2 . D u t y F a c to r , D = t

3 . T

J M

- T

= P

D M

* Z

J C

( t)

s in g le p u ls e

-2

-5

-4

-3

-2

-1

, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

FQB19N20C

Rev. C1

www.fairchildsemi.com