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FR306

3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27

器件类别:半导体    分立半导体   

厂商名称:LGE

厂商官网:http://www.luguang.cn/web_en/index.html

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FR301-FR309
3.0 AMP. Fast Recovery Rectifiers
DO-201AD
Features
High efficiency, Low VF
High current capability
High reliability
High surge current capability
Low power loss.
Mechanical Data
Cases: Molded plastic
Epoxy: UL 94V-0 rate flame retardant
Polarity: Color band denotes cathode end
High temperature soldering guaranteed:
260
o
C/10 seconds/.375”,(9.5mm) lead lengths
at 5 lbs.,(2.3kg) tension
Weight: 1.2 grams
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current .375”(9.5mm) Lead Length
o
@T
A
= 55 C
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 3.0A
o
Maximum DC Reverse Current @ T
A
=25 C
o
at Rated DC Blocking Voltage @ T
A
=125 C
Maximum Reverse Recovery Time ( Note 1)
Typical Junction Capacitance ( Note 2 )
Typical Thermal resistance (Note 3)
Operating Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
Trr
Cj
R
θJA
T
J
FR
301
50
35
50
FR
302
100
70
100
FR
303
200
140
200
FR
304
400
280
400
3. 0
FR
305
600
420
600
FR
306
800
560
800
FR
307
1000
700
1000
FR
Units
FR
309
308
V
1200 1300
840 910
V
1200 1300
V
A
150
1. 2
5
150
150
250
60
40
-65 to +150
-65 to +150
500
A
V
uA
uA
nS
pF
o
C/W
o
C
o
C
Storage Temperature Range
T
STG
1. Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Notes:
2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 Volts D.C.
3. Mount on Cu-Pad Size 16mm x 16mm on P.C.B.
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mail:lge@luguang.cn
FR301-FR309
3.0 AMP. Fast Recovery Rectifiers
RATINGS AND CHARACTERISTIC CURVES (FR301 THRU FR309)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
AVERAGE FORWARD CURRENT AMPERES
4
1000
FIG.2- TYPICAL REVERSE CHARACTERISTICS
PER LEG
INSTANTANEOUS REVERSE CURRENT. ( A)
3
100
Tj=125
0
C
2
1
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375"(9.5mm)
Lead Length
0
25
50
75
100
o
10
Tj=75
0
C
0
125
150
175
AMBIENT TEMPERATURE. ( C)
1.0
Tj=25
0
C
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
150
PEAK FORWARD SURGE CURRENT. (A)
0.1
100
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
50
Tj=25
0
C
8.3ms Single Half Sine Wave
JEDEC Method
FIG.5- TYPICAL FORWARD CHARACTERISTICS
20
10
10
1
INSTANTANEOUS FORWARD CURRENT. (A)
5
10
NUMBER OF CYCLES AT 60Hz
50
100
3
FIG.4- TYPICAL JUNCTION CAPACITANCE
100
1
JUNCTION CAPACITANCE.(pF)
Tj=25
0
C
60
0.3
40
0.1
Tj=25
o
C
Pulse Width=300 s
1% Duty Cycle
20
0.03
10
1
2
4
6
10
20
40
60
100
REVERSE VOLTAGE. (V)
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
0
-0.25A
trr
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
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参数对比
与FR306相近的元器件有:FR301、FR302、FR303、FR304、FR305、FR307、FR308、FR309。描述及对比如下:
型号 FR306 FR301 FR302 FR303 FR304 FR305 FR307 FR308 FR309
描述 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-27 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-27 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
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