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FR807

Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN

器件类别:分立半导体    二极管   

厂商名称:Rectron Semiconductor

厂商官网:http://www.rectron.com/

器件标准:

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器件参数
参数名称
属性值
是否Rohs认证
符合
零件包装代码
TO-220AC
包装说明
TO-220A, 2 PIN
针数
3
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
HIGH RELIABILITY
应用
FAST RECOVERY
外壳连接
CATHODE
配置
SINGLE
二极管元件材料
SILICON
二极管类型
RECTIFIER DIODE
最大正向电压 (VF)
1.3 V
JEDEC-95代码
TO-220AC
JESD-30 代码
R-PSFM-T2
JESD-609代码
e3
湿度敏感等级
1
最大非重复峰值正向电流
200 A
元件数量
1
相数
1
端子数量
2
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
8 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
峰值回流温度(摄氏度)
265
认证状态
Not Qualified
最大重复峰值反向电压
1000 V
最大反向恢复时间
0.5 µs
表面贴装
NO
端子面层
MATTE TIN
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FR801
THRU
FR806
FAST RECOVERY
GLASS PASSIVATED RECTIFIER
VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes
FEATURES
*
*
*
*
*
*
Fast switching
Low leakage
Low forward voltage drop
High current capability
High surge capability
High reliability
TO-220A
.153 (3.9)
.146 (3.7)
.270 (6.9)
.230 (5.8)
.610 (15.5)
.583 (14.8)
.04MAX.
(1.0)
.157
(4.0)
.051
(1.3)
.043 (1.1)
.035 (0.9)
.102 (2.6)
.091 (2.3)
.583 (14.8)
.531 (13.5)
.187 (4.7)
.148 (3.8)
.053 (1.3)
.047 (1.2)
MECHANICAL DATA
*
*
*
*
*
*
Case: TO-220A molded plastic
Epoxy: Device has UL flammability classification 94V-O
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 2.24 grams
Polarity: As marking
.108
(2.75)
.413 (10.5)
.374 (9.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
.022 (0.56)
.014 (0.36)
.126
(3.2)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS
(At T
A
= 25
o
C unless otherwise noted)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current at T
C
= 75
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 3)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
θ
JC
C
J
T
J
, T
STG
FR801
50
35
50
FR802
100
70
100
FR803
200
140
200
8.0
200
3
50
-65 to + 150
FR804
400
280
400
FR805
600
420
600
FR806
800
560
800
UNITS
Volts
Volts
Volts
Amps
Amps
0
C/ W
pF
0
C
ELECTRICAL CHARACTERISTICS
(At T
A
= 25 C unless otherwise noted)
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 8.0A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Full Load Reverse Current Average,
Full Cycle at T
C
= 100
o
C
Maximum Reverse Recovery Time (Note 1)
NOTES : 1. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A
2. Measured at 1 MHz and applied reverse voltage of 4.0 volts
3. Thermal Resistance Junction to Case.
4. Suffix “R” for Reverse Polarity.
SYMBOL
V
F
FR801
FR802
FR803
1.3
10
I
R
150
trr
150
250
500
uAmps
nSec
2001-4
FR804
FR805
FR806
UNITS
Volts
uAmps
o
RATING AND CHARACTERISTIC CURVES ( FR801 THRU FR806 )
AVERAGE FORWARD CURRENT, (A)
FIG. 1 - TYPICAL FORWARD CURRENT
DERATING CURVE
PEAK FORWARD SURGE
CURRENT, (A)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
300
250
200
150
100
50
0
1
2
5
10
20
50
NUMBER OF CYCLES AT 60Hz
100
8.3ms Single Half
Sine-Wave
(JEDED Method)
8
6
4
Single Phase Half Wave
60Hz Inductive or
Resistive Load
2
0
0
25
50
75 100 125 150 175
CASE TEMPERATURE, (
o
C)
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
10
3.0
1.0
0.3
0.1
.03
.01
0.4
TJ = 25
o
C
Pulse Width=300uS
1% Duty Cycle
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
10
INSTANTANEOUS REVERSE
CURRENT, (uA)
6
4
2
1.0
.6
.4
.2
.1
.06
.04
.02
.01
TJ = 25
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE, (V)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE, ( V )
TJ = 25
o
C
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
(+)
25 Vdc
(approx)
(-)
D.U.T
-0.25A
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
1
NOTES: Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
1cm
SET TIME BASE FOR
50/100 ns/cm
RECTRON
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参数对比
与FR807相近的元器件有:FR807R。描述及对比如下:
型号 FR807 FR807R
描述 Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 8A, 1000V V(RRM), Silicon, TO-220AC, TO-220A, 2 PIN
是否Rohs认证 符合 符合
零件包装代码 TO-220AC TO-220AC
包装说明 TO-220A, 2 PIN R-PSFM-T2
针数 3 3
Reach Compliance Code compliant compliant
ECCN代码 EAR99 EAR99
其他特性 HIGH RELIABILITY HIGH RELIABILITY
应用 FAST RECOVERY FAST RECOVERY
外壳连接 CATHODE ANODE
配置 SINGLE SINGLE
二极管元件材料 SILICON SILICON
二极管类型 RECTIFIER DIODE RECTIFIER DIODE
JEDEC-95代码 TO-220AC TO-220AC
JESD-30 代码 R-PSFM-T2 R-PSFM-T2
JESD-609代码 e3 e3
湿度敏感等级 1 1
最大非重复峰值正向电流 200 A 200 A
元件数量 1 1
相数 1 1
端子数量 2 2
最高工作温度 150 °C 150 °C
最低工作温度 -55 °C -55 °C
最大输出电流 8 A 8 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT
峰值回流温度(摄氏度) 265 265
认证状态 Not Qualified Not Qualified
最大重复峰值反向电压 1000 V 1000 V
最大反向恢复时间 0.5 µs 0.5 µs
表面贴装 NO NO
端子面层 MATTE TIN MATTE TIN
端子形式 THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1
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