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FSPYE230R

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

厂商名称：Intersil ( Renesas )

厂商官网：http://www.intersil.com/cda/home/

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FSPYE230R, FSPYE230F
TM
Data Sheet
May 2000
File Number
4852.1
Radiation Hardened, SEGR Resistant
N-Channel Power MOSFETs
Intersil Star*Power Rad Hard
MOSFETs have been specifically
developed for high performance
applications in a commercial or
military space environment. Star*Power MOSFETs offer the
system designer both extremely low r
DS(ON)
and Gate
Charge allowing the development of low loss Power
Subsystems. Star*Power FETs combine this electrical
capability with total dose radiation hardness up to 300K
RADs while maintaining the guaranteed performance for
SEE (Single Event Effects) which the Intersil FS families
have always featured.
The Intersil portfolio of Star*Power FETS includes a family of
devices in various voltage, current and package styles. The
Star*Power family consists of Star*Power and Star*Power
Gold products. Star*Power FETS are optimized for total dose
and r
DS(ON)
performance while exhibiting SEE capability at
full rated voltage up to an LET of 37. Star*Power Gold FETS
have been optimized for SEE and Gate Charge providing
SEE performance to 80% of the rated voltage for an LET of
82 with extremely low gate charge characteristics.
This MOSFET is an enhancement-mode silicon-gate power
field effect transistor of the vertical DMOS (VDMOS)
structure. It is specifically designed and processed to be
radiation tolerant. The MOSFET is well suited for
applications exposed to radiation environments such as
switching regulation, switching converters, power
distribution, motor drives and relay drivers as well as other
power control and conditioning applications. As with
conventional MOSFETs these Radiation Hardened
MOSFETs offer ease of voltage control, fast switching
speeds and ability to parallel switching devices.
Reliability screening is available as either, TXV or Space
equivalent of MIL-S-19500.
Formerly available as type TA45210W.
Features
• 12A, 200V, r
DS(ON)
= 0.140Ω
• UIS Rated
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
- Rated to 300K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects
- SEE Immunity for LET of 36MeV/mg/cm
2
with
V
DS
up to 100% of Rated Breakdown and
V
GS
of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BV
DSS
- Typically Survives 2E12 if Current Limited to I
AS
• Photo Current
- 3.0nA Per-RAD (Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications
for 1E13 Neutrons/cm
2
- Usable to 1E14 Neutrons/cm
2
Symbol
D
G
S
Packaging
SMD.5
Ordering Information
RAD LEVEL
10K
100K
100K
300K
300K
SCREENING LEVEL
Engineering samples
TXV
Space
TXV
Space
PART NUMBER/BRAND
FSPYE230D1
FSPYE230R3
FSPYE230R4
FSPYE230F3
FSPYE230F4
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Star*Power™ is a trademark of Intersil Corporation.
1-888-INTERSIL or 321-724-7143
|
Intersil and Design is a trademark of Intersil Corporation.
|
Copyright © Intersil Corporation 2000
FSPYE230R, FSPYE230F
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
FSPYE230R, FSPYE230F
200
200
12
8
40
±30
42
17
0.33
36
12
40
-55 to 150
300
1.0 (Typ)
UNITS
V
V
A
A
A
V
W
W
W/
o
C
A
A
A
o
C
o
C
g
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
DGR
Continuous Drain Current
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation
T
C
= 25
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
T
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulsed Avalanche Current, L = 100µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .I
AS
Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
S
Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
SM
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J
, T
STG
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
(Distance >0.063in (1.6mm) from Case, 10s Max)
Weight (Typical)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
PARAMETER
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
BV
DSS
V
GS(TH)
TEST CONDITIONS
I
D
= 1mA, V
GS
= 0V
V
GS
= V
DS
,
I
D
= 1mA
T
C
= -55
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
T
C
= 25
o
C
T
C
= 125
o
C
MIN
200
-
2.0
1.0
-
-
-
-
-
-
-
-
-
-
-
V
GS
= 0V to 12V
V
DD
= 100V,
I
D
= 12A
-
-
-
V
GS
= 0V to 20V
V
GS
= 0V to 2V
I
D
= 12A, V
DS
= 15V
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
-
-
-
-
TYP
-
-
-
-
-
-
-
-
-
0.120
-
-
-
-
-
30
10
8
45
3
6.5
1400
230
8
-
MAX
-
5.5
4.5
-
25
250
100
200
1.74
0.140
0.266
20
25
30
15
33
12
10
-
-
-
-
-
-
3.0
UNITS
V
V
V
V
µA
µA
nA
nA
V
Ω
Ω
ns
ns
ns
ns
nC
nC
nC
nC
nC
V
pF
pF
pF
o
C/W
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
I
DSS
I
GSS
V
DS(ON)
r
DS(ON)12
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(12)
Q
gs
Q
gd
Q
g(20)
Q
g(TH)
V
(PLATEAU)
C
ISS
C
OSS
C
RSS
R
θ
JC
V
DS
= 160V,
V
GS
= 0V
V
GS
=
±30V
V
GS
= 12V, I
D
= 12A
I
D
= 8A,
V
GS
= 12V
Gate to Source Leakage Current
Drain to Source On-State Voltage
Drain to Source On Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate Charge Source
Gate Charge Drain
Gate Charge at 20V
Threshold Gate Charge
Plateau Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
V
DD
= 100V, I
D
= 12A,
R
L
= 8.3Ω, V
GS
= 12V,
R
GS
= 7.5Ω
2
FSPYE230R, FSPYE230F
Source to Drain Diode Specifications
PARAMETER
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
SYMBOL
V
SD
t
rr
Q
RR
T
C
= 25
o
C, Unless Otherwise Specified
TEST CONDITIONS
V
GS
= 0, I
D
= 1mA
V
GS
= V
DS
, I
D
= 1mA
V
GS
=
±30V,
V
DS
= 0V
V
GS
= 0, V
DS
= 160V
V
GS
= 12V, I
D
= 12A
V
GS
= 12V, I
D
= 8A
MIN
200
2.0
-
-
-
-
MAX
-
4.5
100
25
1.74
0.140
MIN
200
1.5
4.5
100
50
1.92
0.155
MAX
UNITS
V
V
nA
µA
V
Ω
100K RAD
Drain to Source Breakdown Volts
Gate to Source Threshold Volts
Gate to Body Leakage
Zero Gate Leakage
Drain to Source On-State Volts
Drain to Source On Resistance
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. In situ Gamma bias must be sampled for both V
GS
= 12V, V
DS
= 0V and V
GS
= 0V, V
DS
= 80% BV
DSS
.
(Note 3)
(Note 3)
(Notes 2, 3)
(Note 3)
(Notes 1, 3)
(Notes 1, 3)
BV
DSS
V
GS(TH)
I
GSS
I
DSS
V
DS(ON)
r
DS(ON)12
300K RAD
I
SD
= 12A
I
SD
= 12A, dI
SD
/dt = 100A/µs
TEST CONDITIONS
MIN
-
-
-
TYP
-
-
1.4
MAX
1.2
210
-
UNITS
V
ns
µC
Electrical Specifications up to 300K RAD
PARAMETER
SYMBOL
Single Event Effects (SEB, SEGR)
Note 4
SYMBOL
TEST
Single Event Effects Safe Operating Area
SEESOA
ION
SPECIES
Br
Br
I
I
Au
Au
NOTES:
4. Testing conducted at Brookhaven National Labs.
5. Fluence = 1E5 ions/cm
2
(Typ), T = 25
o
C.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
ENVIRONMENT
(NOTE 5)
TYPICAL LET
(MeV/mg/cm)
37
37
60
60
82
82
TYPICAL
RANGE (µ)
36
36
32
32
28
28
APPLIED
V
GS
BIAS
(V)
-10
-15
-2
-8
0
-5
(NOTE 6)
MAXIMUM
V
DS
BIAS (V)
200
160
200
160
160
120
Performance Curves
Unless Otherwise Specified
LET = 37MeV/mg/cm
2
, RANGE = 36µ
LET = 60MeV/mg/cm
2
, RANGE = 32µ
LET = 82MeV/mg/cm
2
, RANGE = 28µ
240
200
160
120
80
40
0
0
-4
-8
V
GS
(V)
-12
-16
-20
FLUENCE = 1E5 IONS/cm
2
(TYPICAL)
TEMP = 25
o
C
240
LET = 37 BROMINE
200
160
V
DS
(V)
V
DS
(V)
120
80
40
0
0
-5
-10
-15
V
GS
(V)
-20
-25
-30
LET = 82 GOLD
LET = 60 IODINE
FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA
FIGURE 2. TYPICAL SEE SIGNATURE CURVE
3
FSPYE230R, FSPYE230F
Performance Curves
1E-3
LIMITING INDUCTANCE (HENRY)
Unless Otherwise Specified
(Continued)
14
12
1E-4
ILM = 10A
30A
1E-5
100A
300A
1E-6
I
D
, DRAIN (A)
10
8
6
4
2
1E-7
10
0
-50
30
100
DRAIN SUPPLY (V)
300
1000
0
50
100
150
T
C
, CASE TEMPERATURE (
o
C)
FIGURE 3. DRAIN INDUCTANCE REQUIRED TO LIMIT
GAMMA DOT CURRENT TO I
AS
FIGURE 4. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
100
T
C
= 25
o
C
I
D
, DRAIN CURRENT (A)
12V
Q
G
10
100µs
Q
GS
Q
GD
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
DS(ON)
0.1
1
10
100
1ms
V
G
10ms
1000
CHARGE
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. FORWARD BIAS SAFE OPERATING AREA
FIGURE 6. BASIC GATE CHARGE WAVEFORM
2.5
I
D
, DRAIN TO SOURCE CURRENT (A)
PULSE DURATION = 250ms, V
GS
= 12V, I
D
= 8A
2.0
NORMALIZED r
DS(ON)
50
DESCENDING ORDER
V
GS
= 14V
V
GS
= 12V
V
GS
= 10V
V
GS
= 8V
40
1.5
30
1.0
20
0.5
10
V
GS
= 6V
0.0
-80
-40
0
40
80
120
160
0
0
2
4
6
8
10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE (
o
C)
FIGURE 7. TYPICAL NORMALIZED r
DS(ON)
vs JUNCTION
TEMPERATURE
FIGURE 8. TYPICAL OUTPUT CHARACTERISTICS
4
FSPYE230R, FSPYE230F
Performance Curves
NORMALIZED THERMAL RESPONSE (Z
θJC
)
10
Unless Otherwise Specified
(Continued)
1
0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJC
+ T
C
10
-4
10
-3
10
-2
10
-1
10
0
P
DM
t
1
t
2
10
1
0.1
0.01
0.001
10
-5
t, RECTANGULAR PULSE DURATION (s)
FIGURE 9. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE
100
I
AS
, AVALANCHE CURRENT (A)
STARTING T
J
= 25
o
C
10
STARTING T
J
= 150
o
C
1
IF R = 0
t
AV
= (L) (I
AS
) / (1.3 RATED BV
DSS
- V
DD
)
IF R
≠
0
t
AV
= (L/R) ln [(I
AS
*R) / (1.3 RATED BV
DSS
- V
DD
) + 1]
0.1
0.01
0.1
1
10
t
AV
, TIME IN AVALANCHE (ms)
FIGURE 10. UNCLAMPED INDUCTIVE SWITCHING
Test Circuits and Waveforms
ELECTRONIC SWITCH OPENS
WHEN I
AS
IS REACHED
V
DS
L
+
CURRENT I
TRANSFORMER
AS
BV
DSS
t
P
I
AS
50Ω
+
V
DD
V
DS
V
DD
-
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
V
GS
≤
20V
-
DUT
50V-150V
50Ω
t
AV
0V
t
P
FIGURE 11. UNCLAMPED ENERGY TEST CIRCUIT
FIGURE 12. UNCLAMPED ENERGY WAVEFORMS
5
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参数对比
与FSPYE230R相近的元器件有：FSPYE230、FSPYE230D1、FSPYE230F、FSPYE230F3、FSPYE230R4、FSPYE230F4、FSPYE230R3。描述及对比如下：
型号 FSPYE230R FSPYE230 FSPYE230D1 FSPYE230F FSPYE230F3 FSPYE230R4 FSPYE230F4 FSPYE230R3
描述 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
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