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GBJ2010

3.6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:半导体    分立半导体   

厂商名称:SIRECTIFIER

厂商官网:http://www.sirectifier.com

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器件:GBJ2010

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GBJ20005 thru GBJ2010
Single Phase Bridge Rectifiers
Dimensions GBJ(RS6M)
GBJ20005
GBJ2001
GBJ2002
GBJ2004
GBJ2006
GBJ2008
GBJ2010
V
RRM
V
50
100
200
400
600
800
1000
V
RMS
V
35
70
140
280
420
560
700
V
DC
V
50
100
200
400
600
800
1000
Symbol
I
(AV)
I
FSM
V
F
I
R
I
2
t
C
J
R
OJC
T
J
T
STG
Characteristics
Maximum Average Forward (With Heatsink Note 2)
Rectified Current @T
C
=100
o
C (Without Heatsink)
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Maximum Forward Voltage At 10.0A DC
Maximum DC Reverse Current
At Rated DC Blocking Voltage
I
2
t Rating For Fusing (t < 8.3 ms)
Typical Junction Capacitance Per Element (Note 1)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
@T
J
=25
o
C
@T
J
=125
o
C
Maximum Ratings
20.0
3.6
240
1.05
10
500
240
60
0.8
-55 to +150
-55 to +150
Unit
A
A
V
uA
A
2
S
pF
o
C/W
o
o
C
C
NOTES: 1. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
2. Device Mounted On 300mm x 300mm x 1.6mm Cu Plate Heatsink.
FEATURES
* Rating to 1000V PRV
* Ideal for printed circuit board
* Low forward voltage drop, high current capability
* Reliable low cost construction utilizing molded plastic
technique results in inexpensive product
MECHANICAL DATA
* Polarity: Symbols molded on body
* Weight: 0.23 ounces, 6.6 grams
* Mounting position: Any
GBJ20005 thru GBJ2010
Single Phase Bridge Rectifiers
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参数对比
与GBJ2010相近的元器件有:GBJ20005、GBJ2001、GBJ2004、GBJ2002、GBJ2008、GBJ2006。描述及对比如下:
型号 GBJ2010 GBJ20005 GBJ2001 GBJ2004 GBJ2002 GBJ2008 GBJ2006
描述 3.6 A, 1000 V, SILICON, BRIDGE RECTIFIER DIODE 20 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 20 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 3.6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
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