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GBJ2502

25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别：分立半导体    二极管   

厂商名称：HY Electronic

厂商官网：http://www.hygroup.com.tw

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器件：GBJ2502

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器件参数
参数名称
属性值
厂商名称
HY Electronic
包装说明
R-PSFM-T4
Reach Compliance Code
unknow
最小击穿电压
200 V
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PSFM-T4
最大非重复峰值正向电流
350 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
4.2 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
FLANGE MOUNT
最大重复峰值反向电压
200 V
表面贴装
NO
端子形式
THROUGH-HOLE
端子位置
SINGLE
文档预览
GBJ25005 thru GBJ2510
GLASS PASSIVATED
BRIDGE RECTIFIERS
FEATURES
●
Rating to 1000V PRV
●
Ideal for printed circuit board
●
Low forward voltage drop,high current capability
●
Reliable low cost construction utilizing molded plastic
REVERSE VOLTAGE
FORWARD CURRENT
GBJ
? .134(3.4)
? .122(3.1)
1.193(30.3)
1.169(29.7)
- 50
to
1000Volts
- 25
Amperes
.189(4.8)
.173(4.4)
.150(3.8)
.134(3.4)
.198
(5.1)
.800(20.3)
.776(19.7)
? .134(3.4)
? .122(3.1)
technique results in inexpensive product
●
The plastic material has UL flammability
classification 94V-0
.094(2.4)
.078(2.0)
.043(1.1)
.035(0.9)
.165(4.2)
.142(3.6)
.708(18.0)
.669(17.0)
.106(2.7)
.096(2.3)
+
_
~ ~
.441(11.2)
.425(10.8)
.114(2.9)
.098(2.5)
.402(10.2) .303(7.7).303(7.7)
SPACING
.386(9.8) .287(7.3).287(7.3)
.031(0.8)
.023(0.6)
Dimensions in inches and (milimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward
Rectified Current
Peak Forward Surage Current
8.3ms Single Half Sine-Wave
Super Imposed on Rated Load (JEDEC Method)
Maximum Forward Voltage at 12.5A DC
Maximum DC Reverse Current
at Rated DC Blocking Voltage
I
2
t Rating for Fusing (t<8.3ms)
Typical Junction Capacitance Per Element (Note1)
Typical Thermal Resistance (Note2)
Operating Temperature Range
Storage Temperature Range
@ T
J
=25℃
@ T
J
=125℃
(with heatsink Note 2)
@ T
C
=100℃ (without heatsink)
SYMBOL
V
RRM
V
RMS
V
DC
I
(AV)
GBJ
25005
50
30
50
GBJ
2501
100
70
100
GBJ
2502
200
140
200
GBJ
2504
400
280
400
25.0
4.2
350
1.1
10.0
500
510
85
0.6
-55 to +150
-55 to +150
GBJ
2506
600
420
600
GBJ
2508
800
560
800
GBJ
2510
1000
700
1000
UNIT
V
V
V
A
I
FSM
V
F
I
R
I
2
t
C
J
R
θJC
T
J
T
STG
A
V
uA
A
2
s
pF
℃/W
℃
℃
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Device mounted on 300mm*300mm*1.6mm cu plate heatsink.
~ 323 ~
RATING AND CHARACTERTIC CURVES
GBJ25005 thru GBJ2510
FIG.2-MAXMUN NON-REPETITIVE
SURGE CURRENT
PEAK FORWARD SURGE CURRENT ,
AMPERES
350
300
250
200
150
100
50
0
1
2
5
10
20
50
100
T
J
=150
℃
SINGLE -SINE- WAVE
(JEDEC METHOD)
FIG.1-FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT
AMPERES
25
WITH HEATSINK
20
15
10
WITHOUT HEATSINK
SINGLE PHASE HALF WAVE 60Hz
RESISTIVE OR INDUCTIVE LOAD
5
0
0
20
40
60
80
100
120
140
CASE TEMPERATURE,
°C
NUMBER OF CYCLES AT 60Hz
FIG.3-TYPICAL JUNCTION CAPACITANCE
1000
INSTANTANEOUS FORWARD CURRENT,
(A)
100
FIG.4-TYPICAL FORWARD CHARACTERISTICS
CAPACITANCE,(pF)
10
100
1.0
T
J
= 25°C
PULSE WIDTH 300us
10
0.1
T
J
=25
℃
,f=1MH
Z
1.0
1.0
10.0
REVERSE VOLTAGE,(VOLTS)
100
0.01
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.5-TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS REVERSE CURRENT ,(uA)
100
T
J
=125
℃
T
J
=100
℃
10
T
J
=50
℃
1.0
T
J
=25
℃
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
~ 324 ~
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参数对比
与GBJ2502相近的元器件有：GBJ25005、GBJ2501、GBJ2504、GBJ2510、GBJ2508、GBJ2506。描述及对比如下：
型号 GBJ2502 GBJ25005 GBJ2501 GBJ2504 GBJ2510 GBJ2508 GBJ2506
描述 25 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 25 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 25 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE 4.2 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE
厂商名称 HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic HY Electronic
包装说明 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
Reach Compliance Code unknow unknown unknow unknow unknow unknow unknow
最小击穿电压 200 V 50 V 100 V 400 V 1000 V 800 V 600 V
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4
最大非重复峰值正向电流 350 A 350 A 350 A 350 A 350 A 350 A 350 A
元件数量 4 4 4 4 4 4 4
相数 1 1 1 1 1 1 1
端子数量 4 4 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 4.2 A 4.2 A 4.2 A 4.2 A 4.2 A 4.2 A 4.2 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
最大重复峰值反向电压 200 V 50 V 100 V 400 V 1000 V 800 V 600 V
表面贴装 NO NO NO NO NO NO NO
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
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器件捷径:
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