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GBL04

Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon, PLASTIC, GBL, 4 PIN

器件类别：分立半导体    二极管   

厂商名称：Fagor Electrónica

器件标准：

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器件：GBL04

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
包装说明
R-PSIP-T4
针数
4
Reach Compliance Code
compliant
最小击穿电压
400 V
外壳连接
ISOLATED
配置
BRIDGE, 4 ELEMENTS
二极管元件材料
SILICON
二极管类型
BRIDGE RECTIFIER DIODE
JESD-30 代码
R-PSIP-T4
JESD-609代码
e3
最大非重复峰值正向电流
120 A
元件数量
4
相数
1
端子数量
4
最高工作温度
150 °C
最低工作温度
-55 °C
最大输出电流
3 A
封装主体材料
PLASTIC/EPOXY
封装形状
RECTANGULAR
封装形式
IN-LINE
峰值回流温度（摄氏度）
NOT SPECIFIED
认证状态
Not Qualified
最大重复峰值反向电压
400 V
表面贴装
NO
端子面层
Tin (Sn)
端子形式
THROUGH-HOLE
端子位置
SINGLE
处于峰值回流温度下的最长时间
NOT SPECIFIED
Base Number Matches
1
文档预览
GBL02 ........ GBL10
4.0 Amp. Glass Passivated Bridge Rectifiers
Dimensions in mm.
GBL
Voltage
200 V to 1000 V
Current
4.0 A
C2.5
20.3
19.7
3.70
3.30
11.3
10.7
2.70
2.30
1.70
1.30
1.10
0.90
1
2
3
4
5.20 5.20 5.20
4.80 4.80 4.80
1
2
3
4
1.20
0.80
2.70
2.30
14.0
13.0
0.60
0.40
• Glass passivated chip junction
• Ideal for printed circuit board
• High case dielectric strength
• Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
• Typical IR less than 0.1µA
• High surge current capability
• High temperature soldering guaranteed:
260 °C / 10 seconds / 9.5mm, lead lengths.
MECHANICAL DATA
• Case: Molded plastic body.
• Terminals: Pure tin plated, Lead free, leads
solderable per MIL-STD-750, Method 2026.
• Weight: 0.071 ounce, 2.0 grams
• Mounting position: Any
Maximum Ratings and Electrical Characteristics at 25 ºC
V
RRM
V
RMS
V
DC
I
F(AV)
Maximum Recurrent Peak Reverse Voltage (V)
Maximum RMS Voltage (V)
Maximum DC Blocking Voltage (V)
Maximum Average Forward Rectified
Current
@ T
c
= 50 °C (Note 1)
@ T
A
= 40 °C (Note 2)
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load
(JEDEC Method)
T
j
= 150 °C
Rating for fusing (t<8.3 ms)
Typical Junction Capacitance Per Leg at
4.0V, 1 MHz
Operating Temperature Range
Storage Temperature Range
95 pF
-55 to +150 °C
-55 to +150 °C
GBL
02
200
140
200
GBL
04
400
280
400
GBL
06
600
420
600
4.0 A
3.0 A
120 A
60 A
2
sec
40 pF
GBL
08
800
560
800
GBL
10
1000
700
1000
I
FSM
I
2
t
C
j
T
j
T
stg
Electrical Characteristics at Tamb = 25 °C
V
F
I
R
R
th (j-a)
R
th (j-l)
Maximum Instantaneous Forward Voltage
@ = 2.0 A
@ = 4.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@ T
A
= 25 °C
@ T
A
=125°C
(Note 2)
1.0 V
1.1 V
5.0 µA
500 µA
22 °C/W
3.5 °C/W
Typical Thermal Resistance Per Leg (Note 1)
Notes: 1. Unit Mounted on 50.8mm x 76.2mm x 6.35mm Al plate.
2. Units Mounted on P.C.B. 12 x 12mm Copper Pads, 9.5mm Lead Length
Jun - 10
GBL02 ........ GBL10
Rating And Charasterictic Curves
TYPICAL FORWARD VOLTAGE
CHARACTERISTICS PER LEG
DERATING CURVE FOR OUTPUT RECTIFIED
CURRENT
I
F
, instantaneous forward current (A)
I
F(AV)
, average forward current (A)
100
5.0
60 Hz Resistive or Inductive Load
10
4.0
3.0
2.0
1.0
0
0
50
P.C.B. Mounting
12 x 12mm
Copper pads with
9.5mm Lead Length
Heat-Sink Mounting
50.8 x 76.2 x 6.35mm
Aluminum Substrate
1
0.1
T
j
= 25 °C
PULSE WIDTH = 300 µs
1% DUTY CYCLE
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
100
150
V
F
, instantaneous forward voltage (V)
MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
Tamb, ambient temperature (°C)
TYPICAL JUNCTION CAPACITANCE
PER LEG
1000
I
FSM
, peak forward surge current (A)
T
j
= 40 °C
Single Half Sine Wawe
(JEDEC Method)
Cj, junction capacitance (pF)
120
80
T
j
= 25 °C
f = 1 MHz
Vsig = 50mVp-p
100
40
1 Cycle
200 - 400V
600 - 1000V
0
1
10
100
10
0.1
1
10
100
Number of cycles
V
R
, reverse voltage (V)
TYPICAL REVERSE CHARACTERISTICS
500
I
R
, Instantaneous reverse
leakage current (µA)
100
10
1
0.1
T
j
= 25 °C
T
j
= 125 °C
200 - 400V
600 - 1000V
0.01
0
20
40
60
80
100
Percent of rated peak reverse voltage (%)
Jun - 10
查看更多>
参数对比
与GBL04相近的元器件有：GBL06、GBL10、GBL02、GBL08。描述及对比如下：
型号 GBL04 GBL06 GBL10 GBL02 GBL08
描述 Bridge Rectifier Diode, 1 Phase, 3A, 400V V(RRM), Silicon, PLASTIC, GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 600V V(RRM), Silicon, PLASTIC, GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 1000V V(RRM), Silicon, PLASTIC, GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 200V V(RRM), Silicon, PLASTIC, GBL, 4 PIN Bridge Rectifier Diode, 1 Phase, 3A, 800V V(RRM), Silicon, PLASTIC, GBL, 4 PIN
是否无铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合 符合
包装说明 R-PSIP-T4 PLASTIC, GBL, 4 PIN R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
针数 4 4 4 4 4
Reach Compliance Code compliant compliant compliant compliant compliant
最小击穿电压 400 V 600 V 1000 V 200 V 800 V
外壳连接 ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管元件材料 SILICON SILICON SILICON SILICON SILICON
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
JESD-30 代码 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4 R-PSIP-T4
JESD-609代码 e3 e3 e3 e3 e3
最大非重复峰值正向电流 120 A 120 A 120 A 120 A 120 A
元件数量 4 4 4 4 4
相数 1 1 1 1 1
端子数量 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C
最低工作温度 -55 °C -55 °C -55 °C -55 °C -55 °C
最大输出电流 3 A 3 A 3 A 3 A 3 A
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 IN-LINE IN-LINE IN-LINE IN-LINE IN-LINE
峰值回流温度（摄氏度） NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
最大重复峰值反向电压 400 V 600 V 1000 V 200 V 800 V
表面贴装 NO NO NO NO NO
端子面层 Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn) Tin (Sn)
端子形式 THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
端子位置 SINGLE SINGLE SINGLE SINGLE SINGLE
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Base Number Matches 1 1 1 1 1
Is Samacsys - - N N N
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