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GBU8A_07

8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别：半导体    分立半导体   

厂商名称：DIOTEC

厂商官网：http://www.diotec.com/

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GBU8A ... GBU8M
GBU8A ... GBU8M
Silicon-Bridge-Rectifiers
Silizium-Brückengleichrichter
Version 2006-08-11
22.1
5.6
3.5
18.4
5.3
3.4
Nominal current
Nennstrom
Alternating input voltage
Eingangswechselspannung
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging bulk
Standard Lieferform lose im Karton
8A
35...700 V
20.8 x 3.3 x 18 [mm]
7g
GBU ...
– ~ ~ +
1.8
1.7
2.2
0.5
1.1
5.08
2.5
Dimensions - Maße [mm]
Recognized Product – Underwriters Laboratories Inc.® File E175067
Anerkanntes Produkt – Underwriters Laboratories Inc.® Nr. E175067
Maximum ratings
Type
Typ
GBU8A
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
GBU8M
Repetitive peak forward current
Periodischer Spitzenstrom
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
Operating junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Admissible torque for mounting
Zulässiges Anzugsdrehmoment
M4
Max. alternating input voltage
Max. Eingangswechselspannung
V
VRMS
[V]
35
70
140
280
420
560
700
f > 15 Hz
T
A
= 25°C
T
A
= 25°C
Grenzwerte
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
V
RRM
[V]
1
)
50
100
200
400
600
800
1000
I
FRM
I
FSM
i
2
t
T
j
T
S
50 A
2
)
270/300 A
375 A
2
s
-50...+150°C
-50...+150°C
9 ± 10% lb.in.
1 ± 10% Nm
1
2
Valid per diode – Gültig pro Diode
Valid, if leads are kept at ambient temperature T
A
= 50°C at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur T
A
= 50°C gehalten werden
http://www.diotec.com/
© Diotec Semiconductor AG
1
GBU8A ... GBU8M
Characteristics
Max. rectified current without cooling fin
Dauergrenzstrom ohne Kühlblech
Max. rectified current with cooling fin 300 cm²
Dauergrenzstrom mit Kühlblech 300 cm
2
Forward voltage – Durchlass-Spannung
Leakage current – Sperrstrom
Thermal resistance junction to case
Wärmewiderstand Sperrschicht – Gehäuse
T
A
= 50°C
T
A
= 50°C
T
j
= 25°C
T
j
= 25°C
R-load
C-load
R-load
C-load
I
F
= 8 A
V
R
= V
RRM
I
FAV
I
FAV
I
FAV
I
FAV
V
F
I
R
R
thC
Kennwerte
5.6 A
1
)
4.5 A
1
)
8.0 A
6.4 A
< 1.0 V
2
)
< 10 µA
< 3.0 K/W
Type
Typ
GBU8A
GBU8B
GBU8D
GBU8G
GBU8J
GBU8K
GBU8M
Max. admissible load capacitor
Max. zulässiger Ladekondensator
C
L
[µF]
20000
10000
5000
2500
1500
1000
800
Min. required protective resistor
Min. erforderl. Schutzwiderstand
R
t
[Ω]
0.2
0.4
0.8
1.6
2.4
3.2
4.0
120
[%]
100
10
3
[A]
10
2
T
j
= 125°C
80
T
j
= 25°C
60
10
40
1
20
I
FAV
0
0
T
A
50
100
150
[°C]
I
F
10
-1
270a-(12a-1v)
0.4
V
F
0.8
1.0
1.2
1.4
[V] 1.8
Rated forward current versus ambient temperature
Zul. Richtstrom in Abh. von der Umgebungstemp.
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
1
2
Valid, if leads are kept at ambient temperature T
A
= 50°C at a distance of 5 mm from case
Gültig, wenn die Anschlussdrähte in 5 mm vom Gehäuse auf Umgebungstemperatur T
A
= 50°C gehalten werden
Valid per diode – Gültig pro Diode
http://www.diotec.com/
© Diotec Semiconductor AG
2
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参数对比
与GBU8A_07相近的元器件有：GBU8B、GBU8A、GBU8D、GBU8M、GBU8K、29L222C、GBU8G。描述及对比如下：
型号 GBU8A_07 GBU8B GBU8A GBU8D GBU8M GBU8K 29L222C GBU8G
描述 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE General Purpose Inductor, 2.2uH, 1 Element, SMD, ROHS COMPLIANT 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE
是否无铅 - 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 - 符合 符合 符合 符合 符合 符合 符合
厂商名称 - DIOTEC DIOTEC DIOTEC DIOTEC - - DIOTEC
包装说明 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4
针数 - 4 4 4 4 4 - 4
Reach Compliance Code - compliant compliant compliant compli compli compliant compliant
其他特性 - UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED UL RECOGNIZED - UL RECOGNIZED
配置 - BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS - BRIDGE, 4 ELEMENTS
二极管元件材料 - SILICON SILICON SILICON SILICON SILICON - SILICON
二极管类型 - BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE - BRIDGE RECTIFIER DIODE
最大正向电压 (VF) - 1 V 1 V 1 V 1 V 1 V - 1 V
JESD-30 代码 - R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 R-PSFM-T4 - R-PSFM-T4
湿度敏感等级 - 1 1 1 1 1 - 1
最大非重复峰值正向电流 - 300 A 300 A 300 A 300 A 300 A - 300 A
元件数量 - 4 4 4 4 4 - 4
相数 - 1 1 1 1 1 - 1
端子数量 - 4 4 4 4 4 2 4
最高工作温度 - 150 °C 150 °C 150 °C 150 °C 150 °C 85 °C 150 °C
最大输出电流 - 5.6 A 5.6 A 5.6 A 5.6 A 5.6 A - 5.6 A
封装主体材料 - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY
封装形状 - RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR - RECTANGULAR
封装形式 - FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT - FLANGE MOUNT
峰值回流温度（摄氏度） - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
认证状态 - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified - Not Qualified
最大重复峰值反向电压 - 100 V 50 V 200 V 1000 V 800 V - 400 V
表面贴装 - NO NO NO NO NO YES NO
端子形式 - THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE - THROUGH-HOLE
端子位置 - SINGLE SINGLE SINGLE SINGLE SINGLE DUAL ENDED SINGLE
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED - NOT SPECIFIED
Base Number Matches - 1 1 1 - 1 - 1
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