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GBU8B

8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE

器件类别:分立半导体    二极管   

厂商名称:EIC [EIC discrete Semiconductors]

器件标准:

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器件:GBU8B

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器件参数
参数名称
属性值
是否Rohs认证
符合
厂商名称
EIC [EIC discrete Semiconductors]
Reach Compliance Code
compliant
配置
BRIDGE, 4 ELEMENTS
二极管类型
BRIDGE RECTIFIER DIODE
最大正向电压 (VF)
1 V
最大非重复峰值正向电流
200 A
元件数量
4
最高工作温度
150 °C
最大输出电流
8 A
最大重复峰值反向电压
100 V
表面贴装
NO
Base Number Matches
1
文档预览
GBU8A ~ GBU8M
PRV : 50 - 1000 Volts
Io : 8.0 Amperes
FEATURES :
* Ideal for printed circuit boards
* Reliable low cost construction utilizing
molded plastic technique
* Plastic material has Underwriters Laboratory
Flammability Classification 94V-0
* Pb / RoHS Free
Glass Passivated
Single-Phase Bridge Rectifiers
0.88 (22.3)
0.86 (21.8)
0.740 (18.8)
0.720 (18.3)
0.310 (7.9)
0.290 (7.4)
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.850 (2.16)
0.080 (2.03)
0.065 (1.65)
0.187 (4.7)
0.148 (3.8)
o
9 Typ.
~ ~
+
MECHANICAL DATA :
*
*
*
*
Case : Molded plastic
Polarity : Polarity symbols marked on case
Mounting position : Any
Weight : 4 grams
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
0.210
0.190
(5.33)
(4.83)
Dimensions in inches and ( millimeter )
Rating at 25
°
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Output Current Tc=100°C (Note2)
Peak Forward Surge Current, 8.3ms Single half sine-wave
Superimposed on rated load (JEDEC Method)
Rating for fusing
( t < 8.3 ms. )
T
J
= 25
°C
T
J
= 100
°C
Maximum Instantaneous Forward Voltage per leg at I
F
= 8 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage per leg
Typical Thermal Resistance (Note 2)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
I
R(H)
C
J
R
θ
JC
T
J
T
STG
GBU GBU GBU GBU GBU GBU GBU
8A
8B
8D
8G
8J
8K
8M
50
35
50
100
70
100
200
140
200
400
280
400
8.0
200
166
1.0
5.0
500
211
2.2
- 50 to + 150
- 50 to + 150
94
600
420
600
800
560
800
1000
700
1000
0.080 (2.03)
0.060 (1.52)
0.720 (18.29)
0.680 (17.27)
0.060 (1.52)
0.045 (1.14)
UNIT
V
V
V
A
A
A
2
S
V
µA
pF
°C/W
°C
°C
Typical Junction capacitance per element (Note1)
Notes :
(1) Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC
(2) Units case mounted on 3.2" x 3.2" x 0.12" THK (8.2 x 8.2 x 0.3cm Al. Plate heatsink.
Page 1 of 2
Rev. 02 : March 25, 2005
RATING AND CHARACTERISTIC CURVES ( GBU8A - GBU8M )
FIG.1 - DERATING CURVE FOR OUTPUT
RECTIFIED CURRENT
8.0
200
with heatsink
FIG.2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
AVERAGE FORWARD OUTPUT
CURRENT, AMPERES
PEAK FORWARD SURGE
CURRENT, AMPERES
6.0
Mounted on
3.2" x 3.2" X 0.12" THK
( 8.2 x 8.2 x 0.3cm )
Al. plate.
175
150
125
100
75
50
25
8.3 ms SINGLE HALF SINE WAVE
JEDEC METHOD
1
2
4
6
10
20
40
60
100
4.0
T
J
= 150
°C
2.0
60 Hz, Resistive or inductive load.
0
0
25
50
75
100
125
150
175
0
CASE TEMPERATURE, (
°
C)
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL FORWARD CHARACTERISTICS
PER DIODE
100
10
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE
CURRENT, MICROAMPERES
T
J
= 100
°C
INSTANTANEOUS FORWARD
CURRENT, AMPERES
10
10
1.0
1.0
T
J
= 25
°C
T
J
= 25
°C
0.1
Pulse W idth = 300
µs
1 % Duty Cycle
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED REVERSE
VOLTAGE, (%)
0.01
0.4
06
0.8
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE, VOLTS
Page 2 of 2
Rev. 02 : March 25, 2005
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参数对比
与GBU8B相近的元器件有:GBU8D、GBU8G、GBU8J、GBU8A、GBU8K、GBU8M。描述及对比如下:
型号 GBU8B GBU8D GBU8G GBU8J GBU8A GBU8K GBU8M
描述 8 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE 8 A, SILICON, BRIDGE RECTIFIER DIODE 8 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE 6 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
是否Rohs认证 符合 符合 符合 符合 符合 符合 符合
Reach Compliance Code compliant compliant compli compliant compli compli compli
配置 BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS BRIDGE, 4 ELEMENTS
二极管类型 BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE BRIDGE RECTIFIER DIODE
最大非重复峰值正向电流 200 A 200 A 200 A 200 A 200 A 200 A 200 A
元件数量 4 4 4 4 4 4 4
最高工作温度 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
最大输出电流 8 A 8 A 8 A 8 A 8 A 8 A 8 A
最大重复峰值反向电压 100 V 200 V 400 V 600 V 50 V 800 V 1000 V
表面贴装 NO NO NO NO NO NO NO
厂商名称 EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] - EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors] EIC [EIC discrete Semiconductors]
最大正向电压 (VF) 1 V 1 V 1 V 1 V - - -
Base Number Matches 1 1 1 1 - - -
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