G -LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Features :
Description :
GLT625608 is a 262,144-bit static random access
∗
Available in 70/100ns(MAX.)
∗
Automatic power-down when chip disabled memory organized as 32,768 words by 8 bits and
operates from a single 5 volt supply. Inputs and
∗
Low power consumption:
∗
∗
∗
∗
∗
∗
∗
∗
GLT625608
-467.5mW(Max.) Operating
-500µW(Max.)Standby
TTL compatible interface levels
Single 5V power supply
Fully static operation
Three state outputs
256K bit EPROM pin compatible
Data Retention as low as 2V
Industrial Grade (-40°C~85°C) available.
three-state outputs are TTL compatible and allow for
direct interfacing with system I/O bus. The
GLT625608 is available in a standard 330 mil SOP
packages. Other packages will also available upon
request.
Pin Configurations:
GLT625608
Function Block Diagram :
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
-1-
G -LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Pin Descriptions:
Name
A
0
- A
14
WE
OE
CE
Function
Address Inputs
Write Enable
Output Enable
Chip Enable
Data Input/Output
Power Supply (+5V)
Ground
I/O
0
-I/O
7
V
cc
GND
Truth Table:
Mode
Not Selected
( Power down )
Output Disabled
Read
Write
WE
X
H
H
L
CE
H
L
L
L
OE
X
H
L
X
I/O Operation
High Z
High Z
High Z
D
OUT
D
IN
Supply Current
I
SB
,I
SB1
I
SB
,I
SB1
I
CC
I
CC
I
CC
NOTE: X : H or L
Absolute Maximum Ratings:
Ambient Temperature
Under Bias...................................-10°C to +80°C
Storage Temperature(plastic)....-55°C to +125°C
Voltage Relative to GND.............-0.5V to + 7.0V
Data Output Current..................................50mA
Power Dissipation......................................1.0W
1.Stresses greater than those listed under ABSOLUTE
MAXIMUM RATING may cause permanent damage to the
device. This is a stress rating only and functional operation
of the device at these or any other conditions above those
indicated in the operational sections of this specification is
not implied. Exposure to absolute maximum rating
conditions for extended periods may affect reliability.
Operation Range :
RANGE
Commercial
Industrial
AMBIENT
TEMPERATURE
0°C to + 70°C
-40°C to 85°C
Vcc
5V
±
10%
5V
±
10%
Capaccitance
(1)
(T
A
=25°C
,
F=1.0MH
Z
)
°
SYMBOL
CIN
CDQ
PARAMETER
Input
Capacitance
Input/Output
capacitance
CONDIT
IONS
VIN=0V
VI/O=0
MAX.
6
8
UNIT
pF
pF
1.This parameter is guaranteed and tested.
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
-2-
G -LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
DC Characteristics
Sym.
Parameter
V
IL
V
IH
I
LI
I
LO
V
OL
V
OH
I
CC
Test Conditions
Min. Typ
(1)
-0.3
2.2
-5
-5
-
2.4
-
-
-
-
-
-
-
-
-
-
Max.
+0.8
V
CC
+0.3
5
5
0.4
-
100
20
Unit
V
V
µA
µA
V
V
mA
mA
Guaranteed Input Low
Voltage
(2)(3)
Guaranteed Input High
Voltage
(2)
Input Leakage Current
V
CC
=Max., V
IN
=0V to V
CC
Output Leakage Current V =Max.,
CE
≥V
CC
IH
Output Low Voltage
V
CC
=Min.,I
OL
=8mA
Output High Voltage
V
CC
=Min., I
OH
=-4mA
Operating Power Supply V =Max.,
CE
≤V
,
CC
IL
(3)
Current
I =0mA., F=F
I/O
max
I
CCSB
Standby Power Supply
Current
I
CCSB1
Power Down Power
Supply Current
V
CC
=Max.,
CE
≥V
IH
,
I
I/O
=0mA., F=F
max(3)
-
10
10
mA
V
CC
=Max.,
CE
≥V
CC
.-0.2V,
V
IN
≥V
CC
. -0.2V or
1. Typical characteristics are at V
CC
=5V, T
A
=25°C.
2. These are absolute values with repeat to device ground and all overshoots due to system or
tester noise are included.
3. F
MAX
=1/t
RC
.
Data Retention
Sym.
V
DR
I
CCDR
t
CDR
t
R
Parameter
Test Conditions
Min. Typ Max. Unit
2.0
-
0
t
RC(2)
-
2
-
-
-
50
-
-
V
µA
(1)
)
V
CC
for Data retention
CE
≥
V -0.2V
CC
V
IN
≥
V
CC
-0.2V or V
IN
≤
0.2V
Data Retention
CE
≥
V - 0.2V
DR
Current
V
IN
≥
V
DR
- 0.2V or V
IN
≤
0.2V
Chip Deselect to Data
Retention Time
See Retention Waveform
Operating Recovery
Time
ns
ns
1. V
DR
= 3V, T
A
= Specified
2. t
RC
= Read Cycle Time
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
-3-
G -LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
Low V
CC
Data Retention Waveform ( CE Controlled )
AC Test Conditions
Input Pulse Levels
Input Rise and Fall Times
Input and Output Timing
Reference Level
0V to 3.0V
3ns
1.5V
AC Test Loads and Waveforms
Ω
Ω
Ω
Ω
Ω
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
-4-
G -LINK
GLT625608
32K x 8 SLOW SPEED CMOS STATIC RAM
Feb, 2001(Rev. 1.1)
AC Electrical Characteristics
Read Cycle
JEDEC
Parameter
Name
625608-70
Parameter
Name
Parameter
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Enable to Output Valid
Chip Deselect to Output in Low Z
Output Enable to Output in Low Z
Chip Deselect to Output in High Z
Output Disable to Output in High Z
Output Hold from Address Change
Min.
Max.
625608-10
Min.
Max.
Unit
t
AVAX
t
AVQV
t
ELQV
t
GLQV
t
ELQZ
t
GLQX
t
EHQZ
t
GHQZ
t
AXQX
t
RC
t
AA
t
ACS
t
OE
t
CLZ
t
OLZ
t
CHZ
t
OHZ
t
OH
70
-
-
-
5
5
0
0
5
-
70
70
40
-
-
30
30
-
100
-
-
-
10
5
0
0
10
-
100
100
50
-
-
35
35
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
G-Link Technology Corporation
2701 Northwestern Parkway
Santa Clara, CA 95051, U.S.A.
G-Link Technology Corporation,Taiwan
6F,No. 24-2, Industry E. RD. IV, Science Based
Industrial Park, Hsin Chu, Tawian.
-5-
