型号
- 型号
- 关键词
Fast Page DRAM, 256KX4, 80ns, CMOS, PDIP20
厂商名称：SK Hynix(海力士)
厂商官网：http://www.hynix.com/eng/
下载文档| 型号 | GM71C4256BL-80 | GM71C4256BL-60 | GM71C4256BLJ-60 | GM71C4256BLZ-60 |
|---|---|---|---|---|
| 描述 | Fast Page DRAM, 256KX4, 80ns, CMOS, PDIP20 | Fast Page DRAM, 256KX4, 60ns, CMOS, PDIP20 | Fast Page DRAM, 256KX4, 60ns, CMOS, PDSO20 | Fast Page DRAM, 256KX4, 60ns, CMOS, PZIP20 |
| 是否Rohs认证 | 不符合 | 不符合 | 不符合 | 不符合 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 包装说明 | DIP, DIP20,.3 | DIP, DIP20,.3 | SOJ, SOJ20/26,.34 | ZIP, ZIP20,.1 |
| Reach Compliance Code | compliant | compliant | compliant | compliant |
| 最长访问时间 | 80 ns | 60 ns | 60 ns | 60 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDIP-T20 | R-PDIP-T20 | R-PDSO-J20 | R-PZIP-T20 |
| JESD-609代码 | e0 | e0 | e0 | e0 |
| 内存密度 | 1048576 bit | 1048576 bit | 1048576 bit | 1048576 bit |
| 内存集成电路类型 | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM | FAST PAGE DRAM |
| 内存宽度 | 4 | 4 | 4 | 4 |
| 端子数量 | 20 | 20 | 20 | 20 |
| 字数 | 262144 words | 262144 words | 262144 words | 262144 words |
| 字数代码 | 256000 | 256000 | 256000 | 256000 |
| 组织 | 256KX4 | 256KX4 | 256KX4 | 256KX4 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | DIP | DIP | SOJ | ZIP |
| 封装等效代码 | DIP20,.3 | DIP20,.3 | SOJ20/26,.34 | ZIP20,.1 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | IN-LINE | IN-LINE | SMALL OUTLINE | IN-LINE |
| 电源 | 5 V | 5 V | 5 V | 5 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 刷新周期 | 512 | 512 | 512 | 512 |
| 标称供电电压 (Vsup) | 5 V | 5 V | 5 V | 5 V |
| 表面贴装 | NO | NO | YES | NO |
| 技术 | CMOS | CMOS | CMOS | CMOS |
| 端子面层 | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | THROUGH-HOLE | J BEND | THROUGH-HOLE |
| 端子节距 | 2.54 mm | 2.54 mm | 1.27 mm | 1.27 mm |
| 端子位置 | DUAL | DUAL | DUAL | ZIG-ZAG |
