GR2M,GR2M pdf中文资料,GR2M引脚图,GR2M电路-Datasheet-电子工程世界

器件参数

参数名称

属性值

是否Rohs认证

符合

包装说明

R-PDSO-C2

Reach Compliance Code

compli

Is Samacsys

其他特性

HIGH RELIABILITY

应用

EFFICIENCY

配置

SINGLE

二极管元件材料

SILICON

二极管类型

RECTIFIER DIODE

最大正向电压 (VF)

1.3 V

JEDEC-95代码

DO-214AA

JESD-30 代码

R-PDSO-C2

最大非重复峰值正向电流

75 A

元件数量

相数

端子数量

最高工作温度

150 °C

最低工作温度

-65 °C

最大输出电流

2 A

封装主体材料

PLASTIC/EPOXY

封装形状

RECTANGULAR

封装形式

SMALL OUTLINE

最大重复峰值反向电压

1000 V

最大反向电流

10 µA

最大反向恢复时间

0.5 µs

表面贴装

YES

端子形式

C BEND

端子位置

DUAL

Base Number Matches

文档预览

FR201G - FR207G-STR

PRV : 50 - 1000 Volts

Io : 2.0 Amperes

FEATURES :

Glass passivated chip

High current capability

High reliability

Low reverse current

Low forward voltage drop

Fast switching for high efficiency

GLASS PASSIVATED JUNCTION

FAST RECOVERY RECTIFIERS

0.161 (4.1)

0.154 (3.9)

1.00 (25.4)

MIN.

0.284 (7.2)

0.268 (6.8)

MECHANICAL DATA :

* Case : D2 Molded plastic

* Epoxy : UL94V-O rate flame retardant

* Lead : Axial lead solderable per MIL-STD-202,

Method 208 guaranteed

* Polarity : Color band denotes cathode end

* Mounting position : Any

* Weight : 0.465 gram

0.034 (0.86)

0.028 (0.71)

1.00 (25.4)

MIN.

Dimensions in inches and ( millimeters )

Rating at 25

C ambient temperature unless otherwise specified.

Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

RATING

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward Current

0.375"(9.5mm) Lead Length

Ta = 75

°C

Peak Forward Surge Current,

8.3ms Single half sine wave superimposed

on rated load (JEDEC Method)

Maximum Peak Forward Voltage at I

= 2.0 A

Maximum DC Reverse Current

at Rated DC Blocking Voltage

Ta = 25

°C

Ta = 100

°C

SYMBOL FR201G FR202G FR203G FR204G FR205G FR206G FR207G

FR207G

UNIT

-STR

RRM

RMS

F(AV)

100

200

140

200

400

280

400

2.0

600

420

600

800

560

800

1000

700

1000

700

1000

FSM

R(H)

Trr

1.3

500

150

- 65 to + 150

250

500

250

µA

°C

Maximum Reverse Recovery Time ( Note 1 )

Typical Junction Capacitance ( Note 2 )

Junction Temperature Range

Storage Temperature Range

Notes :

STG

( 1 ) Reverse Recovery Test Conditions : I

= 0.5 A, I

= 1.0 A, Irr = 0.25 A.

( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 V

Page 1 of 2

Rev. 01 : April 17, 2002

RATING AND CHARACTERISTIC CURVES ( FR201 - FR207-STR )

FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

Ω

+ 0.5

D.U.T.

50 Vdc

(approx

)

Ω

PULSE

GENERATOR

( NOTE 2 )

OSCILLOSCOPE

( NOTE 1 )

- 0.25

Trr

- 1.0 A

SET TIME BASE FOR 50-100 ns/cm

NOTES : 1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.

2. Rise time = 10 ns max., Source Impedance = 50 ohms.

3. All Resistors = Non-inductive Types.

FIG.2 - DERATING CURVE FOR OUTPUT

RECTIFIED CURRENT

2.0

FIG.3 - MAXIMUM NON-REPETITIVE PEAK

FORWARD SURGE CURRENT

PEAK FORWARD SURGE

CURRENT, AMPERES

8.3 ms SINGLE HALF SINE WAVE

Ta = 55

°C

AVERAGE FORWARD OUTPUT

CURRENT, AMPERES

1.6

1.2

0.8

0.4

60Hz RESISTIVE OR INDUCTIVE LOAD

100

125

150

175

60 100

AMBIENT TEMPERATURE, (

FIG.4 - TYPICAL FORWARD CHARACTERISTICS

NUMBER OF CYCLES AT 60Hz

FIG.5 - TYPICAL REVERSE CHARACTERISTICS

100

FORWARD CURRENT, AMPERES

= 25

°C

REVERSE CURRENT,

MICROAMPERES

Pulse W idth = 300

µs

2% Duty Cycle

= 100

°C

1.0

0.1

= 25

°C

0.1

0.01

100

120

PERCENT OF RATED REVERSE

VOLTAGE, (%)

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

FORWARD VOLTAGE, VOLTS

Page 2 of 2

Rev. 01 : April 2, 2002

参数对比

与GR2M相近的元器件有：GR2B、GR2G、GR2J、GR2A、GR2D、GR2K。描述及对比如下：

型号	GR2M	GR2B	GR2G	GR2J	GR2A	GR2D	GR2K
描述	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15	2 A, 50 V, SILICON, RECTIFIER DIODE, DO-15
是否Rohs认证	符合	符合	符合	符合	符合	符合	符合
包装说明	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
Reach Compliance Code	compli	compli	compli	compli	compli	compli	compli
Is Samacsys	N	N	N	N	N	N	N
其他特性	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY	HIGH RELIABILITY
应用	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
配置	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
二极管元件材料	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
二极管类型	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
最大正向电压 (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JEDEC-95代码	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA	DO-214AA
JESD-30 代码	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2	R-PDSO-C2
最大非重复峰值正向电流	75 A	75 A	75 A	75 A	75 A	75 A	75 A
元件数量	1	1	1	1	1	1	1
相数	1	1	1	1	1	1	1
端子数量	2	2	2	2	2	2	2
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
最低工作温度	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
最大输出电流	2 A	2 A	2 A	2 A	2 A	2 A	2 A
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
最大重复峰值反向电压	1000 V	100 V	400 V	600 V	50 V	200 V	800 V
最大反向电流	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA	10 µA
最大反向恢复时间	0.5 µs	0.15 µs	0.15 µs	0.25 µs	0.15 µs	0.15 µs	0.5 µs
表面贴装	YES	YES	YES	YES	YES	YES	YES
端子形式	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND	C BEND
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Base Number Matches	1	1	1	1	1	1	1