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GS8321Z18AGD-400

静态随机存取存储器 2.5 or 3.3V 2M x 18 36M

器件类别：存储    存储   

厂商名称：GSI Technology

厂商官网：http://www.gsitechnology.com/

器件标准：

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器件参数
参数名称
属性值
是否无铅
不含铅
是否Rohs认证
符合
厂商名称
GSI Technology
零件包装代码
BGA
包装说明
LBGA,
针数
165
Reach Compliance Code
compliant
ECCN代码
3A991.B.2.B
Factory Lead Time
8 weeks
其他特性
IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE
JESD-30 代码
R-PBGA-B165
JESD-609代码
e1
长度
15 mm
内存密度
37748736 bit
内存集成电路类型
ZBT SRAM
内存宽度
18
湿度敏感等级
3
功能数量
1
端子数量
165
字数
2097152 words
字数代码
2000000
工作模式
SYNCHRONOUS
最高工作温度
85 °C
最低工作温度
组织
2MX18
封装主体材料
PLASTIC/EPOXY
封装代码
LBGA
封装形状
RECTANGULAR
封装形式
GRID ARRAY, LOW PROFILE
并行/串行
PARALLEL
峰值回流温度（摄氏度）
260
认证状态
Not Qualified
座面最大高度
1.4 mm
最大供电电压 (Vsup)
2.7 V
最小供电电压 (Vsup)
2.3 V
标称供电电压 (Vsup)
2.5 V
表面贴装
YES
技术
CMOS
温度等级
OTHER
端子面层
Tin/Silver/Copper (Sn/Ag/Cu)
端子形式
BALL
端子节距
1 mm
端子位置
BOTTOM
处于峰值回流温度下的最长时间
NOT SPECIFIED
宽度
13 mm
文档预览
GS8321Z18/32/36AD-400/375/333/250/200/150
165-Bump BGA
Commercial Temp
Industrial Temp
Features
• User-configurable Pipeline and Flow Through mode
• NBT (No Bus Turn Around) functionality allows zero wait
read-write-read bus utilization
• Fully pin-compatible with both pipelined and flow through
NtRAM™, NoBL™ and ZBT™ SRAMs
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V, or 3.3 V +10%/–10% core power supply
• LBO pin for Linear or Interleave Burst mode
• Pin-compatible with 2Mb, 4Mb, 8Mb, and 18Mb devices
• Byte write operation (9-bit Bytes)
• 3 chip enable signals for easy depth expansion
• ZZ pin for automatic power-down
• JEDEC-standard 165-bump BGA package
• RoHS-compliant 165-bump BGA package available
36Mb Pipelined and Flow Through
Synchronous NBT SRAM
400 MHz–150 MHz
2.5 V, or 3.3 V V
DD
2.5 V, or 3.3 V I/O
Because it is a synchronous device, address, data inputs, and
read/ write control inputs are captured on the rising edge of the
input clock. Burst order control (LBO) must be tied to a power
rail for proper operation. Asynchronous inputs include the
Sleep mode enable, ZZ and Output Enable. Output Enable can
be used to override the synchronous control of the output
drivers and turn the RAM's output drivers off at any time.
Write cycles are internally self-timed and initiated by the rising
edge of the clock input. This feature eliminates complex off-
chip write pulse generation required by asynchronous SRAMs
and simplifies input signal timing.
The GS8321Z18/32/36AD may be configured by the user to
operate in Pipeline or Flow Through mode. Operating as a
pipelined synchronous device, in addition to the rising-edge-
triggered registers that capture input signals, the device
incorporates a rising-edge-triggered output register. For read
cycles, pipelined SRAM output data is temporarily stored by
the edge triggered output register during the access cycle and
then released to the output drivers at the next rising edge of
clock.
The GS8321Z18/32/36AD is implemented with GSI's high
performance CMOS technology and is available in JEDEC-
standard 165-bump BGA package.
Functional Description
The GS8321Z18/32/36AD is a 36Mbit Synchronous Static
SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or
other pipelined read/double late write or flow through read/
single late write SRAMs, allow utilization of all available bus
bandwidth by eliminating the need to insert deselect cycles
when the device is switched from read to write cycles.
Parameter Synopsis
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
t
KQ
tCycle
Curr
(x18)
Curr
(x32/x36)
-400
2.5
2.5
395
475
4.0
4.0
290
335
-375
2.5
2.66
390
455
4.2
4.2
275
320
-333
2.5
3.3
355
415
4.5
4.5
260
305
-250
2.5
4.0
280
335
5.5
5.5
235
270
-200
3.0
5.0
240
280
6.5
6.5
200
240
-150
3.8
6.7
205
230
7.5
7.5
190
220
Unit
ns
ns
mA
mA
ns
ns
mA
mA
Pipeline
3-1-1-1
Flow
Through
2-1-1-1
Rev: 1.03 8/2013
1/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321Z18/32/36AD-400/375/333/250/200/150
165 Bump BGA—x18 Commom I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
NC
NC
NC
NC
FT
DQB
DQB
DQB
DQB
DQB
NC
LBO
2
A
A
NC
DQB
DQB
DQB
DQB
MCH
NC
NC
NC
NC
NC
NC
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BB
NC
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
NC
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
NC
NC
NC
NC
NC
DQA
DQA
DQA
DQA
NC
A
A
11
A
NC
DQA
DQA
DQA
DQA
DQA
ZZ
NC
NC
NC
NC
NC
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03 8/2013
2/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321Z18/32/36AD-400/375/333/250/200/150
165 Bump BGA—x32 Common I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
NC
DQC
DQC
DQC
DQC
FT
DQD
DQD
DQD
DQD
NC
NC
LBO
2
A
A
NC
DQC
DQC
DQC
DQC
MCH
DQD
DQD
DQD
DQD
NC
NC
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BC
BD
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
BB
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
DQB
DQB
DQB
DQB
NC
DQA
DQA
DQA
DQA
NC
A
A
11
NC
NC
NC
DQB
DQB
DQB
DQB
ZZ
DQA
DQA
DQA
DQA
NC
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03 8/2013
3/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321Z18/32/36AD-400/375/333/250/200/150
165 Bump BGA—x36 Common I/O—Top View (Package D)
1
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
NC
NC
DQC
DQC
DQC
DQC
DQC
FT
DQD
DQD
DQD
DQD
DQD
NC
LBO
2
A
A
NC
DQC
DQC
DQC
DQC
MCH
DQD
DQD
DQD
DQD
NC
NC
A
3
E1
E2
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
4
BC
BD
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
5
BB
BA
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDI
TMS
6
E3
CK
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
A1
A0
7
CKE
W
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
V
SS
NC
TDO
TCK
8
ADV
G
V
SS
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
DD
V
SS
A
A
9
A
A
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
NC
V
DDQ
V
DDQ
V
DDQ
V
DDQ
V
DDQ
A
A
10
A
A
NC
DQB
DQB
DQB
DQB
NC
DQA
DQA
DQA
DQA
NC
A
A
11
NC
NC
DQB
DQB
DQB
DQB
DQB
ZZ
DQA
DQA
DQA
DQA
DQA
NC
A
A
B
C
D
E
F
G
H
J
K
L
M
N
P
R
11 x 15 Bump BGA—13 mm x 15 mm Body—1.0 mm Bump Pitch
Rev: 1.03 8/2013
4/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
GS8321Z18/32/36AD-400/375/333/250/200/150
GS8321Z18/32/36AD 165-Bump BGA Pin Description
Symbol
A
0
, A
1
An
DQ
A
DQ
B
DQ
C
DQ
D
B
A
, B
B
, B
C
, B
D
CK
CKE
W
E
1
E
3
E
2
FT
G
ADV
ZZ
LBO
TMS
TDI
TDO
TCK
MCH
V
DD
V
SS
V
DDQ
NC
Type
I
I
I/O
I
I
I
I
I
I
I
I
I
I
I
I
I
I
O
I
—
I
I
I
—
Description
Address field LSBs and Address Counter Preset Inputs
Address Inputs
Data Input and Output pins
Byte Write Enable for DQ
A
, DQ
B
, DQ
C
, DQ
D
I/Os; active low
Clock Input Signal; active high
Clock Enable; active low
Write Enable; active low
Chip Enable; active low
Chip Enable; active low
Chip Enable; active high
Flow Through / Pipeline Mode Control
Output Enable; active low
Burst address counter advance enable; active high
Sleep mode control; active high
Linear Burst Order mode; active low
Scan Test Mode Select
Scan Test Data In
Scan Test Data Out
Scan Test Clock
Must Connect High
Core power supply
I/O and Core Ground
Output driver power supply
No Connect
Rev: 1.03 8/2013
5/34
© 2011, GSI Technology
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.
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参数对比
与GS8321Z18AGD-400相近的元器件有：GS8321Z18AGD-333I、GS8321Z18AGD-150I、GS8321Z18AD-375、GS8321Z36AD-400I、GS8321Z18AGD-250I、GS8321Z36AGD-150、GS8321Z18AGD-375I、GS8321Z36AGD-333I、GS8321Z32AD-333。描述及对比如下：
型号 GS8321Z18AGD-400 GS8321Z18AGD-333I GS8321Z18AGD-150I GS8321Z18AD-375 GS8321Z36AD-400I GS8321Z18AGD-250I GS8321Z36AGD-150 GS8321Z18AGD-375I GS8321Z36AGD-333I GS8321Z32AD-333
描述 静态随机存取存储器 2.5 or 3.3V 2M x 18 36M 静态随机存取存储器 2.5 or 3.3V 2M x 18 36M 静态随机存取存储器 2.5 or 3.3V 2M x 18 36M 静态随机存取存储器 2.5 or 3.3V 2M x 18 36M 静态随机存取存储器 2.5 or 3.3V 1M x 36 32M 静态随机存取存储器 2.5 or 3.3V 2M x 18 36M 静态随机存取存储器 2.5 or 3.3V 1M x 36 36M 静态随机存取存储器 2.5 or 3.3V 2M x 18 36M 静态随机存取存储器 2.5 or 3.3V 1M x 36 36M 静态随机存取存储器 2.5 or 3.3V 1M x 32 32M
是否无铅 不含铅 不含铅 不含铅 含铅 含铅 不含铅 不含铅 不含铅 不含铅 含铅
是否Rohs认证 符合 符合 符合 不符合 不符合 符合 符合 符合 符合 不符合
厂商名称 GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology GSI Technology
零件包装代码 BGA BGA BGA BGA BGA BGA BGA BGA BGA BGA
包装说明 LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA, LBGA,
针数 165 165 165 165 165 165 165 165 165 165
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
Factory Lead Time 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks 8 weeks
其他特性 IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE IT ALSO OPERATES AT 3 V TO 3.6 V SUPPLY VOLTAGE
JESD-30 代码 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165 R-PBGA-B165
JESD-609代码 e1 e1 e1 e0 e0 e1 e1 e1 e1 e0
长度 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm 15 mm
内存密度 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 37748736 bit 33554432 bit
内存集成电路类型 ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM ZBT SRAM
内存宽度 18 18 18 18 36 18 36 18 36 32
功能数量 1 1 1 1 1 1 1 1 1 1
端子数量 165 165 165 165 165 165 165 165 165 165
字数 2097152 words 2097152 words 2097152 words 2097152 words 1048576 words 2097152 words 1048576 words 2097152 words 1048576 words 1048576 words
字数代码 2000000 2000000 2000000 2000000 1000000 2000000 1000000 2000000 1000000 1000000
工作模式 SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS SYNCHRONOUS
组织 2MX18 2MX18 2MX18 2MX18 1MX36 2MX18 1MX36 2MX18 1MX36 1MX32
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA LBGA
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE GRID ARRAY, LOW PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度（摄氏度） 260 260 260 NOT SPECIFIED NOT SPECIFIED 260 260 260 260 NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm 1.4 mm
最大供电电压 (Vsup) 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V 2.7 V
最小供电电压 (Vsup) 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V 2.3 V
标称供电电压 (Vsup) 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V 2.5 V
表面贴装 YES YES YES YES YES YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
端子面层 Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Silver/Copper (Sn/Ag/Cu) Tin/Lead (Sn/Pb)
端子形式 BALL BALL BALL BALL BALL BALL BALL BALL BALL BALL
端子节距 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm 1 mm
端子位置 BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm 13 mm
湿度敏感等级 3 3 3 - - 3 3 3 3 -
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器件捷径:
L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ
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