65V N-Channel
MOSFET
GSFN6965
D
Main Product Characteristics
V
(BR)DSS
R
DS(ON)
I
D
65V
D
D
D
D
17.5mΩ
32A
S
SS
G
G
S
Features and Benefits
Advanced MOSFET process technology
PPAK3X3
Schematic Diagram
Ideal for high efficiency switched mode power supplies
Low on-resistance with low gate charge
Fast switching and reverse body recovery
The
GSFN6965
utilizes the latest techniques to achieve high cell density and low on-resistance.
These features make this device extremely efficient and reliable for use in high efficiency switch mode
power supply and a wide variety of other applications.
Description
Absolute Maximum Ratings
(T
C
=25°C
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous (T
C
=25°C)
Drain Current – Continuous (T
C
=100°C)
Drain Current – Pulsed
1
Single Pulse Avalanche Energy
2
Single Pulse Avalanched Current
2
Power Dissipation (T
C
=25°C)
Power Dissipation – Derate above 25°C
Storage Temperature Range
Operating Junction Temperature Range
V
DS
V
GS
I
D
I
DM
E
AS
I
AS
P
D
T
STG
T
J
unless otherwise specified)
Rating
65
±20
32
20.2
128
45
30
46
0.37
-55 to +150
-55 to +150
Unit
V
V
A
A
A
mJ
A
W
W/°C
°C
°C
Symbol
Thermal Characteristics
Parameter
Thermal Resistance Junction to Ambient
Thermal Resistance Junction to Case
Symbol
R
θJA
R
θJC
1/5
Typ.
---
---
Max.
62
2.7
Unit
°C/W
°C/W
65V N-Channel
MOSFET
GSFN6965
Electrical Characteristics
(T
J
=25°C
unless otherwise specified)
°C
°C
,
,
°C
S
°C
Note:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. V
DD
=25V, V
GS
=10V, L=0.1mH, I
AS
=30A, R
G
=25
,
Starting T
J
=25°C.
3. The data tested by pulsed, pulse width
≦
300uS, duty cycle
≦
2%.
4. Essentially independent of operating temperature.
2/5
6 V N-Channel MOSFET
GSFN696
Typical Electrical and Thermal Characteristic Curves
Fig.
Continuous Drain Current vs. T
C
Fig.
Normali ed R
DS ON
vs. T
Fig.3 Normali ed V
th
vs. T
Fig.4 Gate Charge
aveform
Fig.
Normali ed Transient Response
5
Fig.6 Maximum Safe Operation Area
6 V N-Channel MOSFET
GSFN696
Typical Electrical and Thermal Characteristic Curves
9
Fig.
S itching Time
aveform
Fig.
E
AS
aveform
5
65V N-Channel
MOSFET
GSFN6965
Package Outline Dimensions
PPAK3X3
Symbol
A
b
c
D
D1
D2
D3
E
E1
E2
e
H
L
L1
θ
M
www.goodarksemi.com
Dimensions In Millimeters
Min
Max
0.700
0.800
0.250
0.350
0.100
0.250
3.250
3.450
3.000
3.200
1.780
1.980
0.130 REF
3.200
3.400
3.000
3.200
2.390
2.590
0.650 BSC
0.300
0.500
0.300
0.500
0.130 REF
0°
12°
0.150 REF
5/5
Dimensions In Inches
Min
Max
0.028
0.031
0.010
0.013
0.004
0.009
0.128
0.135
0.119
0.125
0.070
0.077
0.005 REF
0.126
0.133
0.119
0.125
0.094
0.102
0.026 BSC
0.011
0.019
0.011
0.019
0.005 REF
0°
12°
0.006 REF
Doc.USGSFN6965xSP2.0
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