GSOT03C to GSOT36C
Vishay Semiconductors
Two-Line ESD-Protection in SOT-23
FEATURES
• Two-line ESD-protection device
2
1
• ESD-protection acc. IEC 61000-4-2
± 30 kV contact discharge
± 30 kV air discharge
• Space saving SOT-23 package
20456
3
20512
• AEC-Q101 qualified
1
• e3 - Sn
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
MARKING
(example only)
XX
XX
20357
YYY
YYY = type code (see table below)
XX = date code
ORDERING INFORMATION
DEVICE NAME
GSOT03C
GSOT04C
GSOT05C
GSOT08C
GSOT12C
GSOT15C
GSOT24C
GSOT36C
ENVIRONMENTAL
STATUS
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
ORDERING CODE
GSOT03C-GS08
GSOT03C-G-08
GSOT04C-GS08
GSOT04C-G-08
GSOT05C-GS08
GSOT05C-G-08
GSOT08C-GS08
GSOT08C-G-08
GSOT12C-GS08
GSOT12C-G-08
GSOT15C-GS08
GSOT15C-G-08
GSOT24C-GS08
GSOT24C-G-08
GSOT36C-GS08
GSOT36C-G-08
TAPED UNITS PER REEL
(8 mm TAPE ON 7" REEL)
3000
3000
3000
3000
3000
3000
3000
3000
MINIMUM ORDER
QUANTITY
15 000
15 000
15 000
15 000
15 000
15 000
15 000
15 000
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
Document Number: 85824
Rev. 1.9, 08-Jun-10
For technical questions, contact:
ESDprotection@vishay.com
www.vishay.com
1
GSOT03C to GSOT36C
Vishay Semiconductors
Two-Line ESD-Protection in SOT-23
PACKAGE DATA
DEVICE
NAME
PACKAGE
NAME
TYPE
CODE
03C
C1G
04C
C8G
05C
C2C
08C
C3G
12C
C4G
15C
C5G
24C
C6G
36C
C7G
ENVIRONMENTAL
STATUS
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
Standard
Green
WEIGHT
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
8.8 mg
8.1 mg
MOLDING
COMPOUND
FLAMMABILITY
RATING
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
UL 94 V-0
MOISTURE
SENSITIVITY LEVEL
SOLDERING
CONDITIONS
GSOT03C
GSOT04C
GSOT05C
GSOT08C
GSOT12C
GSOT15C
GSOT24C
GSOT36C
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
SOT-23
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
MSL level 1
260 °C/10 s at terminals
(according J-STD-020)
ABSOLUTE MAXIMUM RATINGS GSOT03C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
30
I
PPM
30
369
P
PP
504
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT04C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
30
I
PPM
30
429
P
PP
564
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
www.vishay.com
2
For technical questions, contact:
ESDprotection@vishay.com
Document Number: 85824
Rev. 1.9, 08-Jun-10
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS GSOT05C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
30
I
PPM
30
480
P
PP
612
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT08C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
18
I
PPM
18
345
P
PP
400
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT12C
PARAMETER
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
VALUE
12
I
PPM
12
312
P
PP
337
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
UNIT
A
Peak pulse current
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
Document Number: 85824
Rev. 1.9, 08-Jun-10
For technical questions, contact:
ESDprotection@vishay.com
www.vishay.com
3
GSOT03C to GSOT36C
Vishay Semiconductors
Two-Line ESD-Protection in SOT-23
ABSOLUTE MAXIMUM RATINGS GSOT15C
PARAMETER
Peak pulse current
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
8
345
P
PP
400
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
VALUE
8
UNIT
A
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT24C
PARAMETER
Peak pulse current
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
5
235
P
PP
240
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
VALUE
5
UNIT
A
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
ABSOLUTE MAXIMUM RATINGS GSOT36C
PARAMETER
Peak pulse current
TEST CONDITIONS
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 3 or pin 2 to 3
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Pin 1 to 2 or pin 2 to 1; pin 3 not connected
acc. IEC 61000-4-5, t
p
= 8/20 μs; single shot
Contact discharge acc. IEC 61000-4-2; 10 pulses
Air discharge acc. IEC 61000-4-2; 10 pulses
Junction temperature
SYMBOL
I
PPM
3.5
248
P
PP
252
V
ESD
T
J
T
STG
± 30
± 30
- 40 to + 125
- 55 to + 150
W
kV
kV
°C
°C
A
W
VALUE
3.5
UNIT
A
Peak pulse power
ESD immunity
Operating temperature
Storage temperature
BiAs-MODE
(2-line bidirectional asymmetrical protection mode)
With the GSOTxx one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to ground
and pin 3 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or signal-line
is between 0 V (ground level) and the specified maximum reverse working voltage (V
RWM
) the protection diode between pin 1
and pin 3 offer a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
C
) is defined by the breakthrough voltage (V
BR
) level plus the voltage drop at the series impedance
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of
the protection diode. The low forward voltage (V
F
) clamps the negative transient close to the ground level.
Due to the different clamping levels in forward and reverse direction the GSOTxx clamping behaviour is bidirectional and
asymmetrical (BiAs).
www.vishay.com
4
For technical questions, contact:
ESDprotection@vishay.com
Document Number: 85824
Rev. 1.9, 08-Jun-10
GSOT03C to GSOT36C
Two-Line ESD-Protection in SOT-23
Vishay Semiconductors
L1
L2
2
1
3
BiAs
20358
Ground
If a higher surge current or peak pulse current (I
PP
) is needed, both protection diodes in the GSOTxxC can also be used in
parallel in order to “double” the performance.
This offers:
• double surge power = double peak pulse current (2 x I
PPM
)
• half of the line inductance = reduced clamping voltage
• half of the line resistance = reduced clamping voltage
• double line capacitance (2 x C
D
)
• double reverse leakage current (2 x I
R
)
L1
2
1
3
Ground
20359
ELECTRICAL CHARACTERISTICS GSOT03C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 100 μA
at V
R
= 3.3 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 1.6 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
V
F
C
D
MIN.
-
3.3
-
4
-
-
-
-
-
-
TYP.
-
-
-
4.6
5.7
10
1
4.5
420
260
MAX.
2
-
100
-
7.5
12.3
1.2
-
600
-
UNIT
lines
V
μA
V
V
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
ELECTRICAL CHARACTERISTICS GSOT04C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
TEST CONDITIONS/REMARKS
Number of lines which can be protected
at I
R
= 20 μA
at V
R
= 4 V
at I
R
= 1 mA
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at I
PP
= 1 A
at I
PP
= I
PPM
= 30 A
at V
R
= 0 V; f = 1 MHz
at V
R
= 2 V; f = 1 MHz
SYMBOL
N
channel
V
RWM
I
R
V
BR
V
C
V
F
C
D
MIN.
-
4
-
5
-
-
-
-
-
-
TYP.
-
-
-
6.1
7.5
11.2
1
4.5
310
200
MAX.
2
-
20
-
9
14.3
1.2
-
450
-
UNIT
lines
V
μA
V
V
V
V
V
pF
pF
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 3 or pin 2 to 3)
Document Number: 85824
Rev. 1.9, 08-Jun-10
For technical questions, contact:
ESDprotection@vishay.com
www.vishay.com
5
FPGA/CPLD
