H11AG1M, H11AG2M, H11AG3M Phototransistor Optocouplers
May 2007
H11AG1M, H11AG2M, H11AG3M
Phototransistor Optocouplers
Features
■
High efficiency low degradation liquid epitaxial IRED
■
Logic level compatible, input and output currents,
tm
Description
The H11AGXM series consists of a Gallium-Aluminum-
Arsenide IRED emitting diode coupled with a silicon
phototransistor in a dual in-line package. This device
provides the unique feature of the high current transfer
ratio at both low output voltage and low input current.
This makes it ideal for use in low power logic circuits,
telecommunications equipment and portable electronics
isolation applications.
with CMOS and LS/TTL
■
High DC current transfer ratio at low input currents
(as low as 200µA)
■
Underwriters Laboratory (UL) recognized File
#E90700, Volume 2
■
VDE approval available as a test option
– Add option V (e.g., H11AG1VM)
Applications
■
CMOS driven solid state reliability
■
Telephone ring detector
■
Digital logic isolation
Packages
Schematic
6
1
6
1
ANODE 1
6 BASE
CATHODE 2
5 COL
6
1
N/C 3
4 EMITTER
©2007 Fairchild Semiconductor Corporation
H11AG1M, H11AG2M, H11AG3M Rev. 1.0.0
www.fairchildsemi.com
H11AG1M, H11AG2M, H11AG3M Phototransistor Optocouplers
Absolute Maximum Ratings
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
P
D
I
C
Detector Power Dissipation @ 25°C
Derate Linearly from 25°C
Continuous Collector Current
150
2.0
50
mW
mW/°C
mA
Continuous Forward Current
Reverse Voltage
Forward Current – Peak (1µs pulse, 300pps)
LED Power Dissipation 25°C Ambient
Derate Linearly From 25°C
50
6
3.0
75
1.0
mA
V
A
mW
mW/°C
Storage Temperature
Operating Temperature
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ 25°C (LED plus detector)
Derate Linearly From 25°C
-55 to +150
-40 to +100
260 for 10 sec
260
3.5
°C
°C
°C
mW
mW/°C
Parameters
Value
Units
©2007 Fairchild Semiconductor Corporation
H11AG1M, H11AG2M, H11AG3M Rev. 1.0.0
www.fairchildsemi.com
2
H11AG1M, H11AG2M, H11AG3M Phototransistor Optocouplers
Electrical Characteristics
(T
A
= 25°C Unless otherwise specified.)
Individual Component Characteristics
Symbol
EMITTER
V
F
I
R
C
J
DETECTOR
BV
CEO
BV
CBO
BV
ECO
I
CEO
C
CE
Breakdown Voltage, Collector to Emitter
Collector to Base
Emitter to Collector
Leakage Current, Collector to Emitter
Capacitance
I
C
= 1.0mA, I
F
= 0
I
C
= 100µA, I
F
= 0
I
C
= 100µA, I
F
= 0
V
CE
= 10V, I
F
= 0
V
CE
= 10V, f = 1MHz
30
70
7
5
10
10
V
V
V
µA
pF
Input Forward Voltage
Reverse Leakage Current
Capacitance
I
F
= 1mA
V
R
= 5V, T
A
= 25°C
V = 0, f = 1.0MHz
1.25
1.5
10
100
V
µA
pF
Parameters
Test Conditions
Min.
Typ.*
Max.
Units
*Typical values at T
A
= 25°C.
Isolation Characteristics
Symbol
V
ISO
R
ISO
Parameter
Input-Output Isolation Voltage
Isolation Resistance
Test Conditions
I
I-O
≤
1µA, t = 1 min.
V
I-O
= 500VDC, T
A
= 25°C
Min.
5300
10
11
Typ.*
Max.
Units
Vac(rms)
Ω
Transfer Characteristics
(T
A
= 25°C Unless otherwise specified.)
Symbol
CTR
Characteristics
Current Transfer
Ratio
Test Conditions
I
F
= 1mA, V
CE
= 5V
Device
H11AG1M
H11AG2M
H11AG3M
Min.
300
200
100
100
50
20
100
50
Typ.* Max.
Units
%
DC CHARACTERISTICS
I
F
= 1mA, V
CE
= 0.6V
H11AG1M
H11AG2M
H11AG3M
I
F
= 0.2mA, V
CE
= 1.5V
V
CE(SAT)
Saturation Voltage
I
F
= 2.0mA, I
C
= 0.5mA
H11AG1M
H11AG2M
All
.40
V
AC CHARACTERISTICS
Non-Saturated Switching Times
t
on
t
off
Turn-On Time
Turn-Off Time
R
L
= 100
Ω
, I
F
= 1mA, V
CC
= 5V
R
L
= 100
Ω
, I
F
= 1mA, V
CC
= 5V
All
All
5
5
µs
µs
*Typical values at T
A
= 25°C
©2007 Fairchild Semiconductor Corporation
H11AG1M, H11AG2M, H11AG3M Rev. 1.0.0
www.fairchildsemi.com
3
H11AG1M, H11AG2M, H11AG3M Phototransistor Optocouplers
Typical Performance Curves
Figure 1. LED Forward Voltage vs. Forward Current
2.0
Figure 2. Normalized Current Transfer Ratio vs. Forward Current
1.2
1.8
V
F
- FORWARD VOLTAGE (V)
1.0
1.6
NORMALIZED CTR
CE
0.8
1.4
T
A
= -55 C
T
A
= 25
o
C
T
A
= 100
o
C
o
0.6
1.2
0.4
NORMALIZED TO:
I
F
= 5mA
V
CE
= 5V
o
T
A
= 25 C
1
10
100
1.0
0.2
0.8
0.1
1
10
100
0.1
I
F
- LED FORWARD CURRENT (mA)
I
F
- FORWARD CURRENT - mA
Figure 3. Normalized CTR vs. Temperature
1.6
1.4
1.2
NORMALIZED TO:
I
F
= 5mA
V = 5V
CE
Figure 4. Normalized Collector vs. Collector - Emitter Voltage
NORMALIZED I
CE
- COLLECTOR - EMITTER CURRENT
10
I
F
= 10mA
T
A
= 25
o
C
NORMALIZED CTR
CE
1.0
0.8
I
F
= 1mA
0.6
I
F
= 0.5mA
0.4
0.2
0.0
-60
I
F
= 0.2mA
I
F
= 10mA
I
F
= 2mA
I
F
= 5mA
1
I
F
= 5mA
I
F
= 2mA
0.1
I
F
= 1mA
I
F
= 0.5mA
I
F
= 0.2mA
0.01
0.001
NORMALIZED TO:
I
F
= 5mA
V
CE
= 5V
T
A
= 25
o
C
-40
-20
0
20
40
60
o
80
100
0.0001
0.1
1
V
CE
- COLLECTOR - EMITTER VOLTAGE - V
10
T
A
- AMBIENT TEMPERATURE -
C
NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT
Figure 5. Normalized Collector Base
Photocurrent Ratio vs. Forward Current
30
Figure 6. Normalized Collector - Base Current vs. Temperature
10
NORMALIZED COLLECTOR - BASE CURRENT
25
I
F
= 10mA
1
I
F
= 5mA
I
F
= 2mA
I
F
= 1mA
0.1
I
F
= 0.5mA
20
15
10
NORMALIZED TO:
I
F
= 5mA
V
CB
= 5V
T
A
= 25
o
C
I
F
= 0.2mA
0.01
NORMALIZED TO:
I
F
= 5mA
V
CB
= 5V
o
T
A
= 25 C
-40
-20
0
20
40
60
80
100
5
0
0
10
20
30
40
50
60
70
80
90
100
0.001
-60
I
F
- FORWARD CURRENT - mA
T
A
- AMBIENT TEMPERATURE -
o
C
©2007 Fairchild Semiconductor Corporation
H11AG1M, H11AG2M, H11AG3M Rev. 1.0.0
www.fairchildsemi.com
4
H11AG1M, H11AG2M, H11AG3M Phototransistor Optocouplers
Typical Performance Curves
(Continued)
Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature
10000
1000
I
F
= 0mA
V
CE
= 10V
I
CEO
- DARK CURRENT (nA)
100
10
1
0.1
0
10
20
30
40
50
60
70
o
80
90
100
T
A
- AMBIENT TEMPERATURE ( C)
3V
≤
V
CC
≤
10V
47KΩ
R
1
H11AG1-M
AC
INPUT
VOLTAGE
1N4148
C
1
4093 or
74HC14
Input
40-90 VRMS
20Hz
95-135 VRMS
60Hz
200-280 VRMS
50/60Hz
R1
75K
1/10W
180K
1/10W
390K
1/4W
C1
0.1µF
100V
12
ηF
200 V
6.80
ηF
400 V
Z
109K
285K
550K
4.7MΩ
C
2
0.1
4.7KΩ
DC component of input voltage is ignored due to C1
Figure 8. Telephone Ring Detector/A.C. Line CMOS Input Isolator
The H11AG1M uses less input power than the neon bulb traditionally used to monitor telephone and line voltages.
Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired
signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing
requirements.
©2007 Fairchild Semiconductor Corporation
H11AG1M, H11AG2M, H11AG3M Rev. 1.0.0
www.fairchildsemi.com
5
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