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H11D1SR2VM

Headers u0026 Wire Housings 1.25MM HDR 2 CKT Right-Angle

器件类别:光电子/LED    光电   

厂商名称:Fairchild

厂商官网:http://www.fairchildsemi.com/

器件标准:

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器件参数
参数名称
属性值
Brand Name
Fairchild Semiconductor
是否无铅
不含铅
是否Rohs认证
符合
零件包装代码
DIP
包装说明
SURFACE MOUNT, DIP-6
针数
6
制造商包装代码
6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM
Reach Compliance Code
compliant
ECCN代码
EAR99
其他特性
UL APPROVED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min
300 V
配置
SINGLE
标称电流传输比
20%
最大正向电流
0.08 A
最大绝缘电压
7500 V
JESD-609代码
e3
元件数量
1
最高工作温度
100 °C
最低工作温度
-40 °C
光电设备类型
TRANSISTOR OUTPUT OPTOCOUPLER
端子面层
Matte Tin (Sn)
Base Number Matches
1
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device numbers. The most current and up-to-date ordering information can be found at
www.onsemi.com.
Please
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4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
December 2014
4N38M, H11D1M, H11D3M, MOC8204M
6-Pin DIP High Voltage Phototransistor Optocouplers
Features
High Voltage:
Description
The 4N38M, H11D1M, H11D3M, and MOC8204M are
phototransistor-type optically coupled optoisolators. A
gallium arsenide infrared emitting diode is coupled with a
high voltage NPN silicon phototransistor. The device is
supplied in a standard plastic six-pin dual-in-line
package.
– MOC8204M, BV
CEO
= 400 V
– H11D1M, BV
CEO
= 300 V
– H11D3M, BV
CEO
= 200 V
Safety and Regulatory Approvals:
– UL1577, 4,170 VAC
RMS
for 1 Minute
DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage
Applications
Power Supply Regulators
Digital Logic Inputs
Microprocessor Inputs
Appliance Sensor Systems
Industrial Controls
Schematic
Package Outlines
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
Figure 2. Package Outlines
Figure 1. Schematic
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7
www.fairchildsemi.com
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Safety and Insulation Ratings
As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit
data. Compliance with the safety ratings shall be ensured by means of protective circuits.
Parameter
Installation Classifications per DIN VDE
0110/1.89 Table 1, For Rated Mains Voltage
Climatic Classification
Pollution Degree (DIN VDE 0110/1.89)
Comparative Tracking Index
< 150 V
RMS
< 300 V
RMS
Characteristics
I–IV
I–IV
55/100/21
2
175
Symbol
Parameter
Input-to-Output Test Voltage, Method A, V
IORM
x 1.6 = V
PR
,
Type and Sample Test with t
m
= 10 s, Partial Discharge < 5 pC
Input-to-Output Test Voltage, Method B, V
IORM
x 1.875 = V
PR
,
100% Production Test with t
m
= 1 s, Partial Discharge < 5 pC
Maximum Working Insulation Voltage
Highest Allowable Over-Voltage
External Creepage
External Clearance
External Clearance (for Option TV, 0.4" Lead Spacing)
Value
1360
1594
850
6000
7
7
10
0.5
175
350
800
> 10
9
Unit
V
peak
V
peak
V
peak
V
peak
mm
mm
mm
mm
°C
mA
mW
Ω
V
PR
V
IORM
V
IOTM
DTI
T
S
I
S,INPUT
R
IO
Distance Through Insulation (Insulation Thickness)
Case Temperature
(1)
Input Current
(1)
Insulation Resistance at T
S
, V
IO
= 500 V
(1)
P
S,OUTPUT
Output Power
(1)
Note:
1. Safety limit values – maximum values allowed in the event of a failure.
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7
www.fairchildsemi.com
2
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE
T
STG
T
OPR
T
J
T
SOL
P
D
EMITTER
I
F
V
R
I
F
(pk)
P
D
DETECTOR
P
D
Parameter
Storage Temperature
Operating Temperature
Junction Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
A
= 25°C
Derate Above 25°C
Forward DC Current
(2)
Reverse Input Voltage
(2)
Forward Current – Peak (1 µs pulse, 300pps)
(2)
LED Power Dissipation @ T
A
= 25°C
(2)
Derate Above 25°C
Power Dissipation @ T
A
= 25°C
Derate linearly above 25°C
Device
All
All
All
All
All
Value
-40 to +125
-40 to +100
-40 to +125
260 for 10 seconds
420
3.5
Unit
°C
°C
ºC
°C
mW
mW/°C
mA
V
A
mW
mW/°C
mW
mW/°C
V
V
V
V
V
V
V
V
V
mA
All
All
All
All
80
6.0
3.0
120
1.41
300
4.0
400
300
200
80
400
300
200
80
7
100
All
MOC8204M
V
CEO
Collector to Emitter Voltage
(2)
H11D1M
H11D3M
4N38M
MOC8204M
H11D1M
H11D3M
4N38M
H11D1M,
H11D3M,
MOC8204M
All
V
CBO
Collector Base Voltage
(2)
V
ECO
I
C
Emitter to
Collector Voltage
(2)
Collector Current (Continuous)
Note:
2. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7
www.fairchildsemi.com
3
4N38M, H11D1M, H11D3M, MOC8204M — 6-Pin DIP High Voltage Phototransistor Optocouplers
Electrical Characteristics
T
A
= 25°C unless otherwise specified.
Individual Component Characteristics
Symbol
EMITTER
V
F
Δ
V
F
Δ
T
A
BV
R
C
J
I
R
Forward Voltage
(3)
Forward Voltage
Temperature Coefficient
Reverse Breakdown Voltage I
R
= 10 µA
Junction Capacitance
V
F
= 0 V, f = 1 MHz
V
F
= 1 V, f = 1 MHz
I
F
= 10 mA
All
All
All
All
All
MOC8204M
H11D1M
H11D3M
4N38M
MOC8204M
BV
CBO
Collector to Base
(3)
I
C
= 100 µA, I
F
= 0
H11D1M
H11D3M
4N38M
BV
EBO
BV
ECO
Emitter to Base
Emitter to Collector
I
E
= 100 µA, I
F
= 0
I
E
= 100 µA, I
F
= 0
V
CE
= 300 V, I
F
= 0,
T
A
= 25°C
V
CE
= 300 V, I
F
= 0,
T
A
= 100°C
V
CE
= 200V, I
F
= 0,
T
A
= 25°C
V
CE
= 200 V, I
F
= 0,
T
A
= 100°C
V
CE
= 100 V, I
F
= 0,
T
A
= 25°C
V
CE
= 100 V, I
F
= 0,
T
A
= 100°C
No R
BE
, V
CE
= 60 V,
I
F
= 0, T
A
= 25°C
4N38M
All
400
300
200
80
400
300
200
80
7
7
10
100
MOC8204M
250
100
H11D1M
250
100
H11D3M
250
4N38M
50
µA
nA
µA
nA
µA
nA
6
1.15
-1.8
25
50
65
0.05
10
1.50
V
mV/°C
V
pF
pF
µA
V
V
V
V
V
V
V
V
V
V
nA
Characteristic
Test Conditions
Device
Min.
Typ.
Max.
Unit
Reverse Leakage Current
(3)
V
R
= 6 V
DETECTOR
R
BE
= 1 M
Ω
,
I
C
= 1.0 mA, I
F
= 0
No RBE, I
C
= 1.0 mA
BV
CEO
Breakdown Voltage
Collector-to-Emitter
(3)
I
CEO
Leakage Current
Collector to Emitter
(3)
(R
BE
= 1 M
Ω
)
Note:
3. Parameters meet or exceed JEDEC registered data (for 4N38M only).
©2007 Fairchild Semiconductor Corporation
4N38M, H11D1M, H11D3M, MOC8204M Rev. 1.0.7
www.fairchildsemi.com
4
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参数对比
与H11D1SR2VM相近的元器件有:H11D1M、H11D1VM、H11D1SVM。描述及对比如下:
型号 H11D1SR2VM H11D1M H11D1VM H11D1SVM
描述 Headers u0026 Wire Housings 1.25MM HDR 2 CKT Right-Angle ESD Suppressors / TVS Diodes 100volts 5uA 3.7 Amps Uni-Dir Development Boards u0026 Kits - Wireless 2.4 GHz 19 dBm Radio Board Transistor Output Optocouplers White Package, VDE High Voltage
Brand Name Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor
是否无铅 不含铅 不含铅 不含铅 不含铅
是否Rohs认证 符合 符合 符合 符合
零件包装代码 DIP DIP DIP DIP
包装说明 SURFACE MOUNT, DIP-6 PLASTIC, DIP-6 PLASTIC, DIP-6 SURFACE MOUNT, DIP-6
针数 6 6 6 6
制造商包装代码 6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM 6LD, MDIP,OPTO,WHITE,.300 WIDE 6LD, MDIP,OPTO,WHITE,.300 WIDE 6LD,MDIP,OPTO,WHITE,SURFACE MOUNT FORM
Reach Compliance Code compliant compliant compliant compliant
ECCN代码 EAR99 EAR99 EAR99 EAR99
其他特性 UL APPROVED, VDE APPROVED UL APPROVED UL APPROVED, VDE APPROVED UL APPROVED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min 300 V 300 V 300 V 300 V
配置 SINGLE SINGLE SINGLE SINGLE
标称电流传输比 20% 20% 20% 20%
最大正向电流 0.08 A 0.08 A 0.08 A 0.08 A
最大绝缘电压 7500 V 7500 V 7500 V 7500 V
JESD-609代码 e3 e3 e3 e3
元件数量 1 1 1 1
最高工作温度 100 °C 100 °C 100 °C 100 °C
最低工作温度 -40 °C -40 °C -40 °C -40 °C
光电设备类型 TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER TRANSISTOR OUTPUT OPTOCOUPLER
端子面层 Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
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