EDO DRAM Module, 8MX64, 70ns, MOS
厂商名称:Hitachi (Renesas )
厂商官网:http://www.renesas.com/eng/
下载文档型号 | HB56SW864ESN-7B | HB56SW864ESN-6B | HB56SW864ESN-8B |
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描述 | EDO DRAM Module, 8MX64, 70ns, MOS | EDO DRAM Module, 8MX64, 60ns, MOS | EDO DRAM Module, 8MX64, 80ns, MOS |
包装说明 | DIMM, DIMM168 | DIMM, DIMM168 | DIMM, DIMM168 |
Reach Compliance Code | unknown | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 |
访问模式 | FAST PAGE WITH EDO | FAST PAGE WITH EDO | FAST PAGE WITH EDO |
最长访问时间 | 70 ns | 60 ns | 80 ns |
其他特性 | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH |
I/O 类型 | COMMON | COMMON | COMMON |
JESD-30 代码 | R-XDMA-N168 | R-XDMA-N168 | R-XDMA-N168 |
内存密度 | 536870912 bit | 536870912 bit | 536870912 bit |
内存集成电路类型 | EDO DRAM MODULE | EDO DRAM MODULE | EDO DRAM MODULE |
内存宽度 | 64 | 64 | 64 |
功能数量 | 1 | 1 | 1 |
端口数量 | 1 | 1 | 1 |
端子数量 | 168 | 168 | 168 |
字数 | 8388608 words | 8388608 words | 8388608 words |
字数代码 | 8000000 | 8000000 | 8000000 |
工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
最高工作温度 | 70 °C | 70 °C | 70 °C |
组织 | 8MX64 | 8MX64 | 8MX64 |
输出特性 | 3-STATE | 3-STATE | 3-STATE |
封装主体材料 | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
封装代码 | DIMM | DIMM | DIMM |
封装等效代码 | DIMM168 | DIMM168 | DIMM168 |
封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
封装形式 | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
电源 | 3.3 V | 3.3 V | 3.3 V |
认证状态 | Not Qualified | Not Qualified | Not Qualified |
刷新周期 | 4096 | 4096 | 4096 |
座面最大高度 | 25.4 mm | 25.4 mm | 25.4 mm |
最大待机电流 | 0.032 A | 0.032 A | 0.032 A |
最大压摆率 | 1.52 mA | 1.68 mA | 1.36 mA |
最大供电电压 (Vsup) | 3.6 V | 3.6 V | 3.6 V |
最小供电电压 (Vsup) | 3.15 V | 3.15 V | 3.15 V |
标称供电电压 (Vsup) | 3.3 V | 3.3 V | 3.3 V |
表面贴装 | NO | NO | NO |
技术 | MOS | MOS | MOS |
温度等级 | COMMERCIAL | COMMERCIAL | COMMERCIAL |
端子形式 | NO LEAD | NO LEAD | NO LEAD |
端子节距 | 1.27 mm | 1.27 mm | 1.27 mm |
端子位置 | DUAL | DUAL | DUAL |
Base Number Matches | 1 | 1 | - |