CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
HIGH EFFICIENCY SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 3.0 Amperes
HBM31PT
THRU
HBM38PT
ATURES
or surface mounted applications
ow forward voltage, high current capability
ow leakage current
Metallurgically bonded construction
lastic package has Underwriters Laboratory
lammability Classification 94V-0
lass passivated junction
igh temperature soldering guaranteed :
60
o
C/10 seconds at terminals
0.155 (3.94)
0.130 (3.30)
(1)
(2)
SMB
0.083 (2.11)
0.077 (1.96)
ECHANICAL DATA
0.190 (4.75)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
se:
JEDEC SMB molded plastic
minals:
Solder plated, solderable per MIL-STD-750,
Method 2026
arity:
Indicated by cathode band
ight:
0.003 ounces, 0.093 gram
XIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
ngs at 25 C ambient temperature unless otherwise specified.
le phase, half wave, 60 H
Z
, resistive or inductive load.
capacitive load, derate current by 20%.
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
SMB
UNITS
Volts
Volts
Volts
Amps
UM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
HBM31PT HBM32PT HBM33PT HBM34PT HBM35PT HBM36PT HBM37PT HBM38PT
um Recurrent Peak Reverse Voltage
50
35
50
100
70
100
200
140
200
300
210
300
3.0
400
280
400
600
420
600
800
560
800
1000
700
1000
um RMS Voltage
um DC Blocking Voltage
um Average Forward Rectified Current T
L
= 90
o
C
orward Surge Current 8.3 ms single half sine-wave
I
FSM
90
Amps
mposed on rated load (JEDEC method)
Junction Capacitance (Note 1)
C
J
T
J
, T
STG
70
-65 to +150
50
pF
o
ing and Storage Temperature Range
C
RICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
SYMBOL
V
F
HBM31PT HBM32PTHBM33PT HBM34PT HBM35PT HBM36PT HBM37PT HBM38PT
UNITS
Volts
uAmps
uAmps
um Instantaneous Forward Voltage at 3.0 A DC
1.0
1.3
5.0
1.5
1.7
um DC Reverse Current
ed DC Blocking Voltage at T
A
= 25
o
C
um Full Load Reverse Current Average,
cle at T
A
= 55
o
C
um Reverse Recovery Time (Note 2)
I
R
100
trr
50
70
nSec
RATING CHARACTERISTIC CURVES ( HBM31PT THRU HBM38PT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
1cm
SET TIME BASE FOR
10/20 nS/cm
-0.25A
AVERAGE FORWARD CURRENT, ( A )
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
3.0
2.5
2.0
1.5
1.0
0.5
0
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
(+)
25 Vdc
(approx)
(-)
D.U.T
25 50 75 100 125 150 175
LEAD TEMPERATURE ( C )
O
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
1000
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
33P
T
BM
~H
6P
HB
M3
10
T
J
=100 C
o
0.1
1.0
T
J
=25
o
C
HB
T
J
=25 C
.01
0.1
.01
0
20
40
60
80
100
120
140
.001
0
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
1.8
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, ( A )
120
JUNCTION CAPACITANCE, ( pF )
100
80
60
40
20
0
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
200
100
60
40
20
10
6
4
2
1
.1
.2
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
HBM
31
PT~H
BM35
8.3ms Single Half Sine-Wave
(JEDEC Method)
PT
HBM3
6PT~
H
BM38
PT
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
HB
M
o
T
J
=125
o
C
4PT
M3
37
T
J
=25
o
C
PT
1.0
1PT
HB
~H
BM
100
~H
M3
Pulse Width = 300uS
1% Duty Cycle
35P
T
BM
T
38
PT
40
100
