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HCF4078

8-INPUT NOR/OR GATE

厂商名称:ST(意法半导体)

厂商官网:http://www.st.com/

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HCC/HCF4078B
8-INPUT NOR/OR GATE
.
.
.
.
.
.
MEDIUM-SPEED OPERATION t
PHL
, t
PLH
= 75ns
(TYP.) AT V
DD
= 10V
QUIESCENT CURRENT SPECIFIED TO 20V
FOR HCC DEVICE
5V, 10V, AND 15V PARAMETRIC RATINGS
INPUT CURRENT OF 100nA AT 18V AND 25°C
FOR HCC DEVICE
100% TESTED FOR QUIESCENT CURRENT
MEETS ALL REQUIREMENTS OF JEDEC TEN-
TATIVE STANDARD No. 13A, ”STANDARD
SPECIFICATIONS FOR DESCRIPTION OF ”B”
SERIES CMOS DEVICES”
EY
(Plastic Package)
F
(Ceramic Frit Seal Package)
M1
(Micro Package)
C1
(Plastic Chip Carrier)
ORDER CODES :
HCC4078BF
HCF4078BM1
HCF4078BEY
HCF4078BC1
PIN CONNECTIONS
DESCRIPTION
The
HCC4078B
(extended temperature range) and
HCF4078B
(intermediate temperature range) are
monolithic integrated circuit, available in 14-lead
dual in-line plastic or ceramic package, plastic
micropackage.
The
HCC/HCF4078B
NOR/OR Gate provides the
system designer with direct implementation of the
positive-logic-8-input NOR and OR function and
supplements the existing family of COS/MOS gates.
June 1989
1/11
HCC/HCF4078B
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DD
*
V
i
I
I
P
t ot
Parameter
Supply Voltage :
HC C
Types
H C F
Types
Input Voltage
DC Input Current (any one input)
Total Power Dissipation (per package)
Dissipation per Output Transistor
for T
o p
= Full Package-temperature Range
Operating Temperature :
HCC
Types
H CF
Types
Storage Temperature
Value
– 0.5 to + 20
– 0.5 to + 18
– 0.5 to V
DD
+ 0.5
±
10
200
100
– 55 to + 125
– 40 to + 85
– 65 to + 150
Unit
V
V
V
mA
mW
mW
°C
°C
°C
T
op
T
stg
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device at these or any other conditions above those indicated in the operational sec-
tions of this specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device
reliability.
*
All voltage values are referred to V
SS
pin voltage.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
DD
V
I
T
op
Parameter
Supply Voltage :
HC C
Types
H CF
Types
Input Voltage
Operating Temperature :
HCC
Types
H CF
Types
Value
3 to 18
3 to 15
0 to V
DD
– 55 to + 125
– 40 to + 85
Unit
V
V
V
°C
°C
2/11
HCC/HCF4078B
STATIC ELECTRICAL CHARACTERISTICS
(over recommended operating conditions)
Test Conditions
Symbol
Parameter
V
I
(V)
0/ 5
HCC 0/10
Types 0/15
0/20
0/ 5
HCF
0/10
Types
0/15
V
OH
Output High
Voltage
0/ 5
0/10
0/15
V
OL
Output Low
Voltage
5/0
10/0
15/0
V
IH
Input High
Voltage
0.5/4.5
1/9
4.5/0.5
9/1
0/ 5
HCC 0/ 5
Types 0/10
0/15
0/ 5
0/ 5
HCF
Types 0/10
0/15
I
OL
Output
Sink
Current
0/ 5
HCC
0/10
Types
0/15
0/ 5
HCF
0/10
Types
0/15
I
IH
, I
IL
Input
Leakage
Current
HCC
0/18
Types
HCF
Types 0/15
Any Input
2.5
4.6
9.5
13.5
2.5
4.6
9.5
13.5
0.4
0.5
1.5
0.4
0.5
1.5
<1
<1
<1
<1
<1
<1
<1
<1
<1
<1
V
O
(V)
Value
Unit
|I
O
| V
D D
T
L o w
*
25
°C
T
H ig h
*
(µA) (V)
Min. Max. Min. Typ. Max. Min. Max.
5
10
15
20
5
10
15
5
10
15
5
10
15
5
10
15
5
10
15
5
5
10
15
5
5
10
15
5
10
15
5
10
15
18
Any Input
15
±
0.3
±10
– 5
±
0.3
5
7.5
±
1
pF
–2
– 0.64
– 1.6
– 4.2
– 1.53
– 0.52
– 1.3
– 3.6
0.64
1.6
4.2
0.52
1.3
3.6
±
0.1
3.5
7
11
1.5
3
4
– 1.6 – 3.2
– 0.51 – 1
– 1.3 – 2.6
– 3.4 – 6.8
– 1.36 – 3.2
– 0.44 – 1
– 1.1 – 2.6
– 3.0 – 6.8
0.51
1.3
3.4
0.44
1.1
3.0
1
2.6
6.8
1
2.6
6.8
±10
– 5
±
0.1
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
– 1.15
– 0.36
– 0.9
– 2.4
– 1.1
– 0.36
– 0.9
– 2.4
0.36
0.9
2.4
0.36
0.9
2.4
±
1
µA
mA
mA
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
3.5
7
11
1.5
3
4
V
V
0.01
0.01
0.01
0.02
0.01
0.01
0.01
0.25
0.5
1
5
1
2
4
4.95
9.95
14.95
0.05
0.05
0.05
V
V
7.5
15
30
150
7.5
15
30
µA
I
L
Quiescent
Current
1.5/13.5 < 1
V
IL
Input Low
Voltage
13.5/1.5 < 1
I
OH
Output
Drive
Current
C
I
Input Capacitance
* T
Lo w
= – 55°C for
HCC
device : – 40°C for
HCF
device.
* T
High
= + 125°C for
HCC
device : + 85°C for
HCF
device.
The Noise Margin for both ”1” and ”0” level is : 1V min. with V
DD
= 5V, 2V min. with V
DD
= 10V, 2.5 V min. with V
DD
= 15V.
3/11
HCC/HCF4078B
DYNAMIC ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C, C
L
= 50pF, R
L
= 200kΩ,
typical temperature coefficient for all V
DD
values is 0.3%/°C, all input rise and fall time = 20ns)
Symbol
Parameter
Test Conditions
V
D D
(V)
Min.
5
10
15
t
THL
, t
T L H
Transition Time
5
10
15
Value
Typ.
150
75
55
100
50
40
Max.
300
150
110
200
100
80
ns
ns
Unit
t
P HL
, t
P L H
Propagation Delay Time
Typical Output Low (sink) Current Characteristics.
Minimum Output Low (sink) Current Charac-
teristics.
Typical Output High (source) Current Charac-
teristics.
Minimum Output High (source) Current Charac-
teristics.
4/11
HCC/HCF4078B
Typical Voltage Transfer Characteristics
(NOR output).
Typical Transition Time vs. Load Capacitance.
Typical Propagation Delay Time vs. Load Capacit-
ance.
Typical Power Dissipation vs. Frequency.
5/11
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参数对比
与HCF4078相近的元器件有:HCC4078BF、HCF4078BC1。描述及对比如下:
型号 HCF4078 HCC4078BF HCF4078BC1
描述 8-INPUT NOR/OR GATE 8-INPUT NOR/OR GATE 8-INPUT NOR/OR GATE
是否Rohs认证 - 不符合 符合
零件包装代码 - DIP QLCC
包装说明 - DIP, DIP14,.3 QCCJ, LDCC20,.4SQ
针数 - 14 20
Reach Compliance Code - _compli compli
系列 - 4000/14000/40000 4000/14000/40000
JESD-30 代码 - R-GDIP-T14 S-PQCC-J20
JESD-609代码 - e0 e3
负载电容(CL) - 50 pF 50 pF
逻辑集成电路类型 - OR/NOR GATE OR/NOR GATE
功能数量 - 1 1
输入次数 - 8 8
端子数量 - 14 20
最高工作温度 - 125 °C 85 °C
最低工作温度 - -55 °C -40 °C
封装主体材料 - CERAMIC, GLASS-SEALED PLASTIC/EPOXY
封装代码 - DIP QCCJ
封装等效代码 - DIP14,.3 LDCC20,.4SQ
封装形状 - RECTANGULAR SQUARE
封装形式 - IN-LINE CHIP CARRIER
峰值回流温度(摄氏度) - NOT SPECIFIED NOT SPECIFIED
电源 - 3/18 V 3/15 V
Prop。Delay @ Nom-Su - 300 ns 300 ns
传播延迟(tpd) - 300 ns 300 ns
认证状态 - Not Qualified Not Qualified
施密特触发器 - NO NO
座面最大高度 - 5.08 mm 4.57 mm
最大供电电压 (Vsup) - 18 V 15 V
最小供电电压 (Vsup) - 3 V 3 V
标称供电电压 (Vsup) - 5 V 5 V
表面贴装 - NO YES
技术 - CMOS CMOS
温度等级 - MILITARY INDUSTRIAL
端子面层 - Tin/Lead (Sn/Pb) Matte Tin (Sn)
端子形式 - THROUGH-HOLE J BEND
端子节距 - 2.54 mm 1.27 mm
端子位置 - DUAL QUAD
处于峰值回流温度下的最长时间 - NOT SPECIFIED NOT SPECIFIED
宽度 - 7.62 mm 8.965 mm
Base Number Matches - 1 1
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