HCS241MS
September 1995
Radiation Hardened Inverting
Octal Three-State Buffer/Line Driver
Pinouts
20 LEAD CERAMIC DUAL-IN-LINE
METAL SEAL PACKAGE (SBDIP)
MIL-STD-1835 CDIP2-T20, LEAD FINISH C
TOP VIEW
AE
AI1
BO4
AI2
1
2
3
4
5
6
7
8
9
20 VCC
19 BE
18 AO1
17 BI4
16 AO2
15 BI3
14 AO3
13 BI2
12 AO4
11 BI1
Features
• 3 Micron Radiation Hardened SOS CMOS
• Total Dose 200K RAD (Si)
• SEP Effective LET No Upsets: >100 MEV-cm
2
/mg
• Single Event Upset (SEU) Immunity < 2 x 10
-9
Errors/
Bit-Day (Typ)
• Dose Rate Survivability: >1 x 10
12
RAD (Si)/s
• Dose Rate Upset >10
10
RAD (Si)/Sec. 20ns Pulse
BO3
AI3
BO2
AI4
• Latch Up Free Under Any Conditions
• Military Temperature Range: -55
o
C to +125
o
C
• Significant Power Reduction Compared to LSTTL ICs
• DC Operating Voltage Range: 4.5V to 5.5V
• Input Logic Levels
- VIL = 30% VCC Max
- VIH = 70% VCC Min
• Input Compatibility Levels Ii
≤
5µA at VOL, VOH
BO1
GND 10
20 LEAD CERAMIC METAL SEAL
FLATPACK PACKAGE (FLATPACK)
MIL-STD-1835 CDFP4-F20, LEAD FINISH C
TOP VIEW
AE
AI1
BO4
AI2
BO3
AI3
BO2
AI4
BO1
GND
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VCC
BE
AO1
BI4
AO2
BI3
AO3
BI2
AO4
BI1
Description
The Intersil HCS241MS is a Radiation Hardened inverting
octal three-state buffer/line driver with two output enables,
one active low, and one active high.
The HCS241MS utilizes advanced CMOS/SOS technology
to achieve high-speed operation. This device is a member of
radiation hardened, high-speed, CMOS/SOS Logic Family.
The HCS241MS is supplied in a 20 lead ceramic flatpack
(K suffix) or a SBDIP package (D suffix).
Ordering Information
PART NUMBER
HCS241DMSR
HCS241KMSR
HCS241D/Sample
HCS241K/Sample
HCS241HMSR
TEMPERATURE RANGE
-55
o
C to +125
o
C
-55
o
C to +125
o
C
+25
o
C
+25
o
C
+25
o
C
SCREENING LEVEL
Intersil Class S Equivalent
Intersil Class S Equivalent
Sample
Sample
Die
PACKAGE
20 Lead SBDIP
20 Lead Ceramic Flatpack
20 Lead SBDIP
20 Lead Ceramic Flatpack
Die
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 1999
Spec Number
File Number
302
518838
3122.1
HCS241MS
Functional Diagram
AO1
18
AO2
16
AO3
14
AO4
12
BO1
9
BO2
7
BO3
5
BO4
3
N
P
N
P
N
P
N
P
P
N
P
N
P
N
P
N
1
AE
2
AI1
4
AI2
6
AI3
8
AI4
11
BI1
13
BI2
15
BI3
17
BI4
19
BE
TRUTH TABLE
INPUTS
AE
L
L
H
H = High Voltage Level
L = Low Voltage Level
X = Immaterial
Z = High Impedance
AIn
L
H
X
OUTPUT
AOn
L
H
Z
BE
L
H
H
INPUTS
BIn
X
L
H
OUTPUT
BOn
Z
L
H
Spec Number
303
518838
Specifications HCS241MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V
DC Input Current, Any One Input
. . . . . . . . . . . . . . . . . . . . . . . .±10mA
DC Drain Current, Any One Output.
. . . . . . . . . . . . . . . . . . . . . .±35mA
(All Voltage Reference to the VSS Terminal)
Storage Temperature Range (TSTG) . . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (Soldering 10 sec) . . . . . . . . . . . . . . . . . +265
o
C
Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance
θ
JA
θ
JC
o
C/W
SBDIP Package. . . . . . . . . . . . . . . . . . . .
72
24
o
C/W
Ceramic Flatpack Package . . . . . . . . . . . 107
o
C/W 28
o
C/W
Maximum Package Power Dissipation at +125
o
C Ambient
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.69W
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . . 0.47W
If device power exceeds package dissipation capability, provide heat
sinking or derate linearly at the following rate:
SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.9mW/
o
C
Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 9.3mW/
o
C
Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40 Gates
CAUTION: As with all semiconductors, stress listed under “Absolute Maximum Ratings” may be applied to devices (one at a time) without resulting in permanent
damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed
under “Electrical Performance Characteristics” are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V
Input Rise and Fall Times at 4.5V VCC (TR, TF) . . . . . 100ns/V Max
Operating Temperature Range (T
A
) . . . . . . . . . . . . -55
o
C to +125
o
C
Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . 0.0V to 30% of VCC
Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
1
2, 3
Output Current (Sink)
IOL
VCC = VIH = 4.5V,
VOUT = 0.4V,
VIL = 0 (Note 2)
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V,
VIL = 0 (Note 2)
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOL = 50µA
VCC = 5.5V, VIH = 3.85V,
VIL = 1.65V, IOL = 50µA
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V, IOH = -50µA
VCC = 5.5V, VIH = 3.85V,
VIL = 1.35V, IOH = -50µA
Input Leakage
Current
IIN
VCC = 5.5V
VIN = VCC or GND
1
2, 3
1
2, 3
1, 2, 3
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C, +125
o
C,
-55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C, +125
o
C,
-55
o
C
MIN
-
-
7.2
6.0
-7.2
-6.0
-
MAX
40
750
-
-
-
-
0.1
V
mA
mA
UNITS
µA
PARAMETER
Supply Current
SYMBOL
ICC
CONDITIONS
VCC = 5.5V,
VIN = VCC or GND
Output Current
(Source)
IOH
Output Voltage Low
VOL
1, 2, 3
-
0.1
V
1, 2, 3
VCC-
0.1
VCC-
0.1
-
-
-
-
-
-
V
1, 2, 3
-
±0.5
±5.0
±1.0
±50
-
V
µA
1
2, 3
Three-State Output
Leakage Current
IOZ
VCC = 5.5V, Force
Voltage = 0V or VCC
1
2, 3
µA
Noise Immunity
Functional Test
NOTES:
FN
VCC = 4.5V, VIH = 3.15V,
VIL = 1.35V (Note 3)
7, 8A, 8B
-
1. All voltages referenced to device GND.
2. Force/Measure function may be interchanged.
3. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
Spec Number
304
518838
Specifications HCS241MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS
GROUP
A SUB-
GROUPS
9
10, 11
Propagation Delay
TPHL1
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
9
10, 11
Propagation Delay
TPZL1
TPZL2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
10, 11
Propagation Delay
TPLZ1
TPLZ2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
10, 11
Propagation Delay
TPZH1
TPZH2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
10, 11
Propagation Delay
TPHZ1
TPHZ2
VCC = 4.5V, VIH = 4.5V,
VIL = 0
9
10, 11
NOTES:
1. All voltage referenced to GND.
2. Measurements made with CL = 50pF, RL = 500Ω, Input TR = TF = 3ns
LIMITS
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
2
2
2
2
2
2
2
2
2
2
2
2
MAX
21
25
21
25
25
30
25
30
20
24
25
30
ns
ns
ns
ns
ns
UNITS
ns
PARAMETER
Propagation Delay
SYMBOL
TPLH1
(NOTES 1, 2)
CONDITIONS
VCC = 4.5V, VIH = 4.5V,
VIL = 0V
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
LIMITS
PARAMETER
Capacitance Power
Dissipation
SYMBOL
CPD
CONDITIONS
VCC = 5V, VIH = 5V,
VIL = 0V, f = 1MHz
NOTE
1
1
Input Capacitance
CIN
VCC = 5V, VIH = 5V,
VIL = 0V, f = 1MHz
1
1
Output Capacitance
COUT
VCC = 5V, VIH = 5V,
VIL = 0V, f = 1MHz
1
1
NOTE:
1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested.
These parameters are characterized upon initial design release and upon design changes which would affect these characteristics.
TEMPERATURE
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
+25
o
C
+125
o
C, -55
o
C
MIN
-
-
-
-
-
-
MAX
36
59
10
10
20
20
UNITS
pF
pF
pF
pF
pF
pF
Spec Number
305
518838
Specifications HCS241MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS
200K RAD
LIMITS
TEMPERATURE
+25
o
C
+25
o
C
+25
o
C
+25
o
C
MIN
-
6
-6
-
-
+25
o
C
VCC-
0.1
VCC-
0.1
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
+25
o
C
-
-
-
2
2
2
2
2
2
MAX
0.75
-
-
0.1
0.1
-
-
±50
±5
-
25
25
30
30
24
30
UNITS
mA
mA
mA
V
V
V
V
µA
µA
-
ns
ns
ns
ns
ns
ns
PARAMETER
Supply Current
Output Current (Sink)
Output Current (Source)
Output Voltage Low
SYMBOL
ICC
IOL
IOH
VOL
(NOTES 1, 2)
CONDITIONS
VIN = 5.5V, VIN = VCC or GND
VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0
VCC = VIH = 4.5V,
VOUT = VCC - 0.4V, VIL = 0
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOL = 50µA
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOL = 50µA
Output Voltage High
VOH
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V,
IOH = -50µA
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V,
IOH = -50µA
Three-State Output
Leakage Current
Input Leakage Current
Noise Immunity
Functional
Propagation Delay
IOZ
IIN
FN
TPLH1
TPHL1
TPZL1
TPZL2
TPLZ1
TPLZ2
TPZH1
TPZH2
TPHZ1
TPHZ2
VCC = 5.5V, Force Voltage = 0V or VCC
VCC = 5.5V, VIN = VCC or GND
VCC = 4.5V, VIL = 3.15V, VIH = 1.35V, (Note 2)
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
VCC = 4.5V, VIH = 4.5V, VIL = 0V
NOTES:
1. All voltages referenced to device GND.
2. For functional tests, VO
≥
4.0V is recognized as a logic “1”, and VO
≤
0.5V is recognized as a logic “0”.
TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25
o
C)
GROUP B
SUBGROUP
5
5
5
PARAMETER
ICC
IOL/IOH
IOZ
DELTA LIMIT
+12µA
-15% of 0 Hour
±200nA
Spec Number
306
518838
