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HER151

1.5 A, SILICON, RECTIFIER DIODE, DO-15

器件类别:分立半导体    二极管   

厂商名称:SECOS

厂商官网:http://www.secosgmbh.com/

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器件参数
参数名称
属性值
厂商名称
SECOS
Reach Compliance Code
compliant
ECCN代码
EAR99
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HER151
THRU
HER158
Elektronische Bauelemente
VOLTAGE 50V ~ 1000V
1.5AMP High Efficiency Rectifiers
DO-15
FEATURES
* Low forward voltage drop
* High current capability
* High reliability
* High surge current capability
* High speed switching
.140(3.6)
.104(2.6)
DIA.
1.0(25.4)
MIN.
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-0 rate flame retardant
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guaranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any
* Weight: 0.40 grams
.034(.9)
.028(.7)
DIA.
.300(7.6)
.230(5.8)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25 C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=50 C
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage at 1.5A
Maximum DC Reverse Current
Ta=25 C
at Rated DC Blocking Voltage
Ta=100 C
Maximum Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range T
J
, T
STG
NOTES:
HER151 HER152 HER153 HER154 HER155 HER156 HER157 HER158
UNITS
V
V
V
A
A
V
µ
A
50
35
50
100
70
100
200
140
200
300
210
300
1.5
50
1.3
5.0
150
400
280
400
600
420
600
800
560
800
1000
700
1000
1.0
1.85
µ
A
70
nS
pF
C
50
30
-65 +150
1. Reverse Recovery Time test condition: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
HER151
THRU
HER158
Elektronische Bauelemente
VOLTAGE 50V ~ 1000V
1.5AMP High Efficiency Rectifiers
RATING AND CHARACTERISTIC CURVES (HER151 THRU HER158)
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT
DERATING CURVE
1.8
1.5
1.2
0.9
0.6
0.3
0
0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.375"(9.5mm) Lead Length
10
53
R1
55
R1
HE
INSTANTANEOUS FORWARD CURRENT,(A)
4~
HE
51
~
R1
15
HE
HE
R
.1
Tj=25 C
Pulse Width 300us
1% Duty Cycle
H
1.0
ER
15
6~
H
ER
15
8
25
50
75
100
125
150
175
AMBIENT TEMPERATURE ( C)
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
.6
.8
1.0
1.2
1.4
1.6
1.8
PEAK FORWAARD SURGE CURRENT,(A)
.001
.4
50
FORWARD VOLT
AGE,(V)
40
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
30
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
(+)
25Vdc
(approx.)
( )
1
W
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
(+)
10
0
1
5
10
50
100
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
175
trr
+0.5A
|
|
|
|
|
|
|
|
JUNCTION CAPACITANCE,(pF)
150
125
100
75
50
25
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
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参数对比
与HER151相近的元器件有:HER158、HER157、HER156、HER155、HER153、HER154、HER152。描述及对比如下:
型号 HER151 HER158 HER157 HER156 HER155 HER153 HER154 HER152
描述 1.5 A, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 1000 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 800 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 400 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, SILICON, RECTIFIER DIODE, DO-15 1.5 A, 300 V, SILICON, RECTIFIER DIODE, DO-15 1.5 A, SILICON, RECTIFIER DIODE, DO-15
厂商名称 SECOS SECOS SECOS SECOS SECOS SECOS - SECOS
Reach Compliance Code compliant compliant compli compli compliant compli - compli
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